Download citation
Download citation
link to html
Using scanning X-ray diffraction microscopy with a spot size of 220 × 600 nm, it was possible to inspect individual GaAs nanorods grown seed-free through circular openings in a SiNx mask in a periodic array with 3 µm spacing on GaAs[111]B. The focused X-ray beam allows the determination of the strain state of individual rods and, in combination with coherent diffraction imaging, it was also possible to characterize morphological details. Rods grown either in the centre or at the edge of the array show significant differences in shape, size and strain state.

Follow J. Synchrotron Rad.
Sign up for e-alerts
Follow J. Synchrotron Rad. on Twitter
Follow us on facebook
Sign up for RSS feeds