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A new quaternary dicerium lithium/nickel disilicide, Ce2Li0.39Ni1.61Si2, crystallizes as a new structure type of inter­metallic compounds closely related to the AlB2 family. The crystal-chemical inter­relationships between parent AlB2-type, BaLiSi, ZrBeSi and the title compound are discussed using the Bärnighausen formalism. Two Ce atoms occupy sites of 3m. symmetry. The remainder, i.e. Ni, mixed Ni/Li and Si atoms, occupy sites of \overline{6}m2 symmetry. The environment of the Ce atom is an 18-vertex polyhedron and the Ni, Ni/Li and Si atoms are enclosed in tricapped trigonal prisms. The title structure can be assigned to class No. 10 (trigonal prism and its derivatives) according to the Krypyakevich classification scheme [Krypyakevich (1977). In Structure Types of Inter­metallic Compounds. Moscow: Nauka]. The electronic structure of the title compound was calculated using the tight-binding linear muffin-tin orbital method in the atomic spheres approximation (TB-LMTO-ASA). Metallic bonding is dominant in this compound. The strongest inter­actions are Ni-Si and Ce-Si.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S2053229614011589/ov3049sup1.cif
Contains datablocks I, New_Global_Publ_Block

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S2053229614011589/ov3049Isup2.hkl
Contains datablock I

CCDC reference: 1004063

Introduction top

Ternary inter­metallic RE—T—Si compounds, based on rare earth (RE) elements and transition (T) metals (especially Mn, Fe, Co and Ni), are sufficiently well studied and described in the literature (Gladyshevskii et al., 1990). The equiatomic CeNiSi ternary compound crystallizes in the LaPtSi structure type with the noncentrosymmetric I41md space group (Lee et al., 1987). The CeLiSi ternary compound crystallizes in the α-ThSi2 structure type with the centrosymmetric I41/amd space group (Pavlyuk et al., 1989). These compounds have a similar tetra­gonal structure because the LaPtSi structure type is a ternary substitutional variant of α-ThSi2.

Earlier studies of four-component RE–T–Li–X alloys (X is a Group IV element, such as Si, Ge and Sn) show that quaternary phases can be formed in two ways, firstly, due to partial substitution of transition-metal atoms by Li atoms, and secondly, by the formation of ordered structures. The ability of Li atoms to partially substitute transition metal atoms was observed previously by us while studying solid solutions RELixCu2–xSi2 and RELixCu2–xGe2 (Pavlyuk et al., 1993), TbLi1–xZnxSn2 (Stetskiv et al., 2012) and TmNi1–xLixSn2 (Stetskiv et al., 2013a), and ternary phases Li2-xAg1+xIn3 (Chumak et al., 2013) and Li18Cu15Al7 (Dmytriv et al., 2010). The ordered distribution of transition-metal and Li atoms in separate crystallographic sites was indicated for the TmLi2Co6Sn20 phase which crystallizes as a derivative variant of the binary cubic Cr23C6 structure type (Stetskiv et al., 2013b). The Li atoms occupy the same crystallographic positions as the transition-metal atoms in previously studied ternary phases RELiGe with the ZrNiAl type (Pavlyuk et al., 1991; Pavlyuk & Bodak, 1992a) and RE3Li2Ge3 with the Hf3Ni2Si3 type (Pavlyuk & Bodak, 1992b).

Experimental top

Synthesis and crystallization top

Cerium, nickel, lithium and silicon, all with a nominal purity greater than 99.9 wt%, were used as starting elements for preparing the title alloy. First, pieces of the pure metals were pressed into pellets, enclosed in a tantalum crucible and placed in a resistance furnace with a thermocouple controller. The heating rate from room temperature to 670 K was 5 K min-1. At this temperature, an alloy was held over 3 d and then the temperature was increased from 670 to 1070 K over a period 4 h. The alloy was annealed at this temperature for 8 h and cooled slowly to room temperature. After the melting and annealing procedures, the total weight loss was less than 2%. Small good-quality single crystals of the title compound were isolated from the alloy.

The crystal structure of the title compound was investigated by the single-crystal method. The synthesized bulk alloy was tested by powder diffraction to find how many phases contained this alloy. X-ray diffraction on powderized samples was performed by means of diffractometer Stoe Stadi P (Cu Kα radiation, step mode of scanning) in order to ensure phase analysis and check for phase purity. Rietveld matrix full-profile structure refinements were carried out and the XRD powder pattern of the compound conforms well to the powder pattern calculated on the basis of single-crystal models (Fig. 6). The powdered alloy is practically a single phase. The refined by powder method unit-cell dimensions are: a = 4.06054 (8), a = 8.3894 (2) Å, Rp = 4.78, Rwp = 6.85 and χ2 = 5.78.

The content of lithium in the alloy were determined experimentally by means of a Flapho-4 flame photometer (Carl Zeiss Jena) using an inter­ference filter (671 nm) from a solution of the alloy (0.3 g) in HCl solution (25 ml, 1M). The evaluation of results is 74.4 mg l-1 of lithium that corresponds to 6.7 at% in the alloy.

The density of the alloy was determined using the volumetric method. For quaternary phase Ce2Li0.39Ni1.61Si2, the measured density is 5.97 (5) Mg m-3 a difference of less than 1% from the density calculated from X-ray data.

Summarizing the results of the study of a single crystal, and taking into account the results of flame photometry, the measurement of the density and the results of powder diffraction (single-phase alloy, added phases and reaction mixture contained pure Li was not observed), we can assume that Li and Ni form a statistical mixture in the structure.

Refinement top

Crystal data, data collection and structure refinement details are summarized in Table 1. The analysis of extinction conditions give 16 trigonal and hexagonal space groups. Among these, only P6m2 fulfils simultaneously the requirements of an absence of systematic extinction conditions and a practically ordered distribution of atoms in separated sites. Consequently, the structure solution with direct methods was performed in this space group.

The initial refinement the model obtained by direct methods showed that the thermal displacement parameter of atom Ni3 was considerably different from those of the other Ni2 site, suggesting that this position is partially occupied by lithium. Take into account a statistical mixture Ni/Li in the Wyckoff 1f position, the structure model was successfully refined with anisotropic displacement parameters during the final refinement cycles. The Ni3/Li1 site occupancies were refined and summed to unity, yielding the reported approximate 0.61:0.39 ratio.

Results and discussion top

Structural studies of four-component alloys from CeLiSi–CeNiSi sections indicate the existence of a new Ce2Li0.39Ni1.61Si2 quaternary phase. The single-crystal data proves that the title compound crystallizes in the hexagonal crystal system in the space group P6m2, with six atoms per unit cell. The projection of the unit cell and the coordination polyhedra of the atoms are shown in Fig. 1. The Ce atoms in Wyckoff position 2g (site symmetry 3m.) are enclosed in an 18-vertex hexagonal prism in which all side faces are centred by six adjacent Ce atoms. The coordination polyhedra around the Ni, statistical mixtures of Ni/Li and Si atoms are tricapped trigonal prisms. For the Ni2 atom (Wyckoff position 1e, site symmetry 6m2) and statistical Ni/Li mixtures in Wyckoff position 1f (site symmetry 6m2), the tricapped trigonal prisms have compositions [Ni2Ce6Si3] and [(Ni/Li)3Ce6Si3]. The Si4 (Wyckoff position 1c, site symmetry 6m2) and Si5 (Wyckoff position 1d, site symmetry 6m2) atoms are enclosed in the tricapped trigonal prisms [Si4Ce6Ni3] and [Si5Ce6(Ni/Li)3], respectively. Taking into account the coordination polyhedra for the smallest atoms (Ni and Si), the title structure can be assigned to class No. 10 (trigonal prism and its derivatives) according to the classification scheme of Krypyakevich (1977).

The title quaternary compound is derived from the well-known simple aristotype AlB2 (Hofmann & Jäniche, 1935). Many previously studied compounds which belong to this family are described by Hoffmann & Pöttgen (2001). In the base AlB2 structure type, the smallest atoms (B) form 63 nets and the largest atom (Al) forms well-known triangular 36 nets which are typical for closest packing of atoms. In the title compound, the Ni, Ni/Li and Si atoms form a two-dimensional graphite-like nets. Along the [001] direction (z axis), these hexagonal layers are separated by Ce-atom layers (Fig. 2). The composition of the two-dimensional graphite-like nets and the way they pack it clearly explained by a doubling of unit-cell dimension c and the noncentrosymmetric nature of the title quaternary phase relative to the parent AlB2 type. The honeycomb arrangement of graphite-like nets in the AlB2 type consist of six B atoms. In the title phase at z = 0, the honeycomb contains three Ni2 atoms and three Si4 atoms, while at z = 1/2, the honeycomb contains three Ni3/Li3 atoms and three Si5 atoms.

The Bärnighausen scheme (Bärnighausen, 1980), including the atomic site development from AlB2 to ternary phases BaLiSi and ZrBeSi, and quaternary phase Ce2Li0.39Ni1.61Si2, is shown in Fig. 3. The BaLiSi type (Axel et al., 1968), space group P6m2, derives from AlB2 via translationengleiche symmetry reduction of index 2. The ZrBeSi type (Nielsen & Baenziger, 1954) can be transformed from AlB2 via klassengleiche symmetry reduction of index 2. The Ce2Li0.39Ni1.61Si2 hexagonal phase derives from the BaLiSi type via isomorphic transition or from ZrBeSi via translationengleiche symmetry reduction of index 2.

The electronic structure of the title compound was calculated using the tight-binding linear muffin-tin orbital (TB–LMTO) method in the atomic spheres approximation (TB–LMTO–ASA; Andersen, 1975; Andersen et al., 1985, 1986), using the experimental crystallographic data which are presented here. The exchange and correlation were inter­preted in the local-density approximation (von Barth & Hedin, 1972).

Around the Ce, Ni and Li atoms, the minimum electron localization function (ELF) are observed and the maximum ELF > 0.80 is around the Si atoms (Fig. 4). The total and partial density of states (DOS) for the title compound (Fig. 5a) in the region below EF exhibits significant mixing between the Ce, Ni and Si states. For the region above EF, the contributions are mostly from Ce 4f and 5d orbitals and Si p orbitals. The Si s-type states and Ni d-type states are mainly close to the lower valence band. The visible occupation number for electronic states at the Fermi level indicate a metallic behaviour. The crystal orbital Hamilton population (COHP) and integrated COHP (iCOHP) calculations were used to obtain a qu­anti­tative evaluation of the bonding strength between the different types of atoms. From the COHP curves, both phases (Fig. 5b-d) can be concluded that the strongest inter­actions are between Ni—Si atoms (d = 2.344 Å and -iCOHP = 3.004 eV) and Ce—Si atoms (d = 3.147 Å and -iCOHP = 1.378 eV). The Ce—Ni inter­action is weak (d = 3.147 Å and -iCOHP= 0.477 eV).

Related literature top

For general background, see: Chumak et al. (2013); Dmytriv et al. (2010); Gladyshevskii et al. (1990); Pavlyuk & Bodak (1992a, 1992b); Pavlyuk et al. (1989, 1991, 1993); Stetskiv et al. (2012). For related structures, see: Bärnighausen (1980); Hoffmann & Pöttgen (2001); Hofmann & Jäniche (1935); Krypyakevich (1977); Lee et al. (1987); Nielsen & Baenziger (1954). For other related literature, see: Andersen (1975); Andersen et al. (1985, 1986); Barth & Hedin (1972).

Computing details top

Data collection: CrysAlis CCD (Oxford Diffraction, 2008); cell refinement: CrysAlis CCD (Oxford Diffraction, 2008); data reduction: CrysAlis RED (Oxford Diffraction, 2008); program(s) used to solve structure: SHELXS97 (Sheldrick, 2008); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008); molecular graphics: DIAMOND (Brandenburg, 2006); software used to prepare material for publication: SHELXL97 (Sheldrick, 2008)/publCIF (Westrip, 2010).

Figures top
Fig. 1. The projection of the unit cell and coordination polyhedra of the atoms of Ce2Li0.39Ni1.61Si2.

Fig. 2. Packing of the hexagonal layers in the related structures of the AlB2 family.

Fig. 3. Group–subgroup scheme on the basis of Bärnighausen formalism for AlB2, BaLiSi, ZrBeSi and quaternary phase Ce2Li0.39Ni1.61Si2.

Fig. 4. (ac) The electron localization function and (d) isosurface from electronic structure calculations for ordered structure models Ce2NiLiSi2.

Fig. 5. The electronic density of states (DOS) and crystal orbital Hamilton population (COHP) for Ce2NiLiSi2.

Fig. 6. The powder diffraction pattern of the Ce2Li0.39Ni1.61Si2 alloy.
Dicerium di(lithium/nickel) disilicide top
Crystal data top
Ce2Li0.39Ni1.61Si2Dx = 6.002 Mg m3
Dm = 5.97 Mg m3
Dm measured by not measured
Mr = 433.38Mo Kα radiation, λ = 0.71073 Å
Hexagonal, P6m2Cell parameters from 136 reflections
Hall symbol: P -6 2θ = 2.4–27.3°
a = 4.0596 (3) ŵ = 25.16 mm1
c = 8.4011 (17) ÅT = 293 K
V = 119.90 (3) Å3Plate, grey
Z = 10.07 × 0.06 × 0.01 mm
F(000) = 190.1
Data collection top
Oxford Diffraction Xcalibur3 CCD
diffractometer
141 independent reflections
Radiation source: fine-focus sealed tube133 reflections with I > 2σ(I)
Graphite monochromatorRint = 0.119
Detector resolution: 0 pixels mm-1θmax = 27.3°, θmin = 2.4°
ω scansh = 55
Absorption correction: analytical
(CrysAlis RED; Oxford Diffraction, 2008)
k = 55
Tmin = 0.228, Tmax = 0.787l = 1010
1089 measured reflections
Refinement top
Refinement on F2Primary atom site location: structure-invariant direct methods
Least-squares matrix: fullSecondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.025 w = 1/[σ2(Fo2) + (0.0328P)2]
where P = (Fo2 + 2Fc2)/3
wR(F2) = 0.099(Δ/σ)max = 0.055
S = 1.30Δρmax = 1.08 e Å3
141 reflectionsΔρmin = 1.43 e Å3
13 parametersAbsolute structure: Flack (1983), 56 Friedel pairs
0 restraintsAbsolute structure parameter: 0.4 (3)
Crystal data top
Ce2Li0.39Ni1.61Si2Z = 1
Mr = 433.38Mo Kα radiation
Hexagonal, P6m2µ = 25.16 mm1
a = 4.0596 (3) ÅT = 293 K
c = 8.4011 (17) Å0.07 × 0.06 × 0.01 mm
V = 119.90 (3) Å3
Data collection top
Oxford Diffraction Xcalibur3 CCD
diffractometer
141 independent reflections
Absorption correction: analytical
(CrysAlis RED; Oxford Diffraction, 2008)
133 reflections with I > 2σ(I)
Tmin = 0.228, Tmax = 0.787Rint = 0.119
1089 measured reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0250 restraints
wR(F2) = 0.099Δρmax = 1.08 e Å3
S = 1.30Δρmin = 1.43 e Å3
141 reflectionsAbsolute structure: Flack (1983), 56 Friedel pairs
13 parametersAbsolute structure parameter: 0.4 (3)
Special details top

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/UeqOcc. (<1)
Ce10.00000.00000.24999 (12)0.0102 (6)
Ni20.66670.33330.00000.008 (3)
Ni30.66670.33330.50000.015 (5)0.606 (15)
Li30.66670.33330.50000.015 (5)0.394 (15)
Si40.33330.66670.00000.022 (8)
Si50.33330.66670.50000.021 (8)
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
Ce10.0121 (8)0.0121 (8)0.0064 (7)0.0061 (4)0.0000.000
Ni20.008 (4)0.008 (4)0.010 (6)0.0038 (18)0.0000.000
Ni30.013 (7)0.013 (7)0.019 (11)0.006 (3)0.0000.000
Li30.013 (7)0.013 (7)0.019 (11)0.006 (3)0.0000.000
Si40.026 (11)0.026 (11)0.013 (15)0.013 (6)0.0000.000
Si50.029 (12)0.029 (12)0.005 (13)0.015 (6)0.0000.000
Geometric parameters (Å, º) top
Ce1—Si4i3.1471 (7)Ni3—Ce1iv3.1472 (7)
Ce1—Ni2i3.1471 (7)Ni3—Ce1ix3.1472 (7)
Ce1—Si4ii3.1471 (7)Ni3—Ce1x3.1472 (7)
Ce1—Ni2iii3.1471 (7)Ni3—Ce1vii3.1472 (7)
Ce1—Ni23.1471 (7)Ni3—Ce1xi3.1472 (7)
Ce1—Si43.1471 (7)Si4—Ni2xii2.3438 (2)
Ce1—Si53.1472 (7)Si4—Ni2iii2.3438 (2)
Ce1—Ni33.1472 (7)Si4—Ce1v3.1471 (7)
Ce1—Si5ii3.1472 (7)Si4—Ce1xiii3.1471 (7)
Ce1—Li3iii3.1472 (7)Si4—Ce1vii3.1471 (7)
Ce1—Ni3iii3.1472 (7)Si4—Ce1xii3.1471 (7)
Ni2—Si4iv2.3438 (2)Si4—Ce1viii3.1471 (7)
Ni2—Si4ii2.3438 (2)Si5—Li3xii2.3438 (2)
Ni2—Si42.3438 (2)Si5—Li3iii2.3438 (2)
Ni2—Ce1v3.1471 (7)Si5—Ni3xii2.3438 (2)
Ni2—Ce1vi3.1471 (7)Si5—Ni3iii2.3438 (2)
Ni2—Ce1vii3.1471 (7)Si5—Ce1xii3.1472 (7)
Ni2—Ce1iv3.1471 (7)Si5—Ce1ix3.1472 (7)
Ni2—Ce1viii3.1471 (7)Si5—Ce1xiv3.1472 (7)
Ni3—Si5iv2.3438 (2)Si5—Ce1vii3.1472 (7)
Ni3—Si5ii2.3438 (2)Si5—Ce1xi3.1472 (7)
Ni3—Si52.3438 (2)
Si4i—Ce1—Ni2i43.724 (11)Ce1—Ni3—Ce1x136.277 (11)
Si4i—Ce1—Si4ii80.33 (2)Ce1iv—Ni3—Ce1x83.73 (3)
Ni2i—Ce1—Si4ii43.724 (11)Ce1ix—Ni3—Ce1x80.32 (2)
Si4i—Ce1—Ni2iii43.724 (11)Si5iv—Ni3—Ce1vii68.139 (5)
Ni2i—Ce1—Ni2iii80.33 (2)Si5ii—Ni3—Ce1vii138.136 (15)
Si4ii—Ce1—Ni2iii96.28 (3)Si5—Ni3—Ce1vii68.139 (5)
Si4i—Ce1—Ni296.28 (3)Ce1—Ni3—Ce1vii80.32 (2)
Ni2i—Ce1—Ni280.33 (2)Ce1iv—Ni3—Ce1vii80.32 (2)
Si4ii—Ce1—Ni243.724 (11)Ce1ix—Ni3—Ce1vii83.73 (3)
Ni2iii—Ce1—Ni280.33 (2)Ce1x—Ni3—Ce1vii136.277 (11)
Si4i—Ce1—Si480.33 (2)Si5iv—Ni3—Ce1xi138.136 (15)
Ni2i—Ce1—Si496.28 (3)Si5ii—Ni3—Ce1xi68.139 (5)
Si4ii—Ce1—Si480.33 (2)Si5—Ni3—Ce1xi68.139 (5)
Ni2iii—Ce1—Si443.724 (11)Ce1—Ni3—Ce1xi83.73 (3)
Ni2—Ce1—Si443.724 (11)Ce1iv—Ni3—Ce1xi136.277 (11)
Si4i—Ce1—Si5136.276 (4)Ce1ix—Ni3—Ce1xi80.32 (2)
Ni2i—Ce1—Si5180.00 (3)Ce1x—Ni3—Ce1xi80.32 (2)
Si4ii—Ce1—Si5136.276 (4)Ce1vii—Ni3—Ce1xi136.277 (11)
Ni2iii—Ce1—Si599.674 (9)Ni2xii—Si4—Ni2iii120.0
Ni2—Ce1—Si599.674 (9)Ni2xii—Si4—Ni2120.0
Si4—Ce1—Si583.727 (12)Ni2iii—Si4—Ni2120.0
Si4i—Ce1—Ni3180.00 (3)Ni2xii—Si4—Ce1v138.138 (15)
Ni2i—Ce1—Ni3136.276 (4)Ni2iii—Si4—Ce1v68.138 (5)
Si4ii—Ce1—Ni399.674 (9)Ni2—Si4—Ce1v68.138 (5)
Ni2iii—Ce1—Ni3136.276 (4)Ni2xii—Si4—Ce1xiii68.138 (5)
Ni2—Ce1—Ni383.727 (12)Ni2iii—Si4—Ce1xiii68.138 (5)
Si4—Ce1—Ni399.674 (9)Ni2—Si4—Ce1xiii138.138 (15)
Si5—Ce1—Ni343.723 (11)Ce1v—Si4—Ce1xiii80.33 (2)
Si4i—Ce1—Si5ii136.276 (4)Ni2xii—Si4—Ce1vii68.138 (5)
Ni2i—Ce1—Si5ii99.674 (9)Ni2iii—Si4—Ce1vii138.138 (15)
Si4ii—Ce1—Si5ii83.727 (12)Ni2—Si4—Ce1vii68.138 (5)
Ni2iii—Ce1—Si5ii180.00 (3)Ce1v—Si4—Ce1vii136.276 (11)
Ni2—Ce1—Si5ii99.674 (9)Ce1xiii—Si4—Ce1vii136.276 (11)
Si4—Ce1—Si5ii136.276 (4)Ni2xii—Si4—Ce1xii68.138 (5)
Si5—Ce1—Si5ii80.32 (2)Ni2iii—Si4—Ce1xii68.138 (5)
Ni3—Ce1—Si5ii43.723 (11)Ni2—Si4—Ce1xii138.138 (15)
Si4i—Ce1—Li3iii99.674 (9)Ce1v—Si4—Ce1xii136.276 (11)
Ni2i—Ce1—Li3iii136.276 (4)Ce1xiii—Si4—Ce1xii83.72 (3)
Si4ii—Ce1—Li3iii180.00 (3)Ce1vii—Si4—Ce1xii80.33 (2)
Ni2iii—Ce1—Li3iii83.727 (12)Ni2xii—Si4—Ce1viii68.138 (5)
Ni2—Ce1—Li3iii136.276 (4)Ni2iii—Si4—Ce1viii138.138 (15)
Si4—Ce1—Li3iii99.674 (9)Ni2—Si4—Ce1viii68.138 (5)
Si5—Ce1—Li3iii43.723 (11)Ce1v—Si4—Ce1viii80.33 (2)
Ni3—Ce1—Li3iii80.32 (2)Ce1xiii—Si4—Ce1viii80.33 (2)
Si5ii—Ce1—Li3iii96.27 (3)Ce1vii—Si4—Ce1viii83.72 (3)
Si4i—Ce1—Ni3iii99.674 (9)Ce1xii—Si4—Ce1viii136.276 (11)
Ni2i—Ce1—Ni3iii136.276 (4)Ni2xii—Si4—Ce1138.138 (15)
Si4ii—Ce1—Ni3iii180.00 (3)Ni2iii—Si4—Ce168.138 (5)
Ni2iii—Ce1—Ni3iii83.727 (12)Ni2—Si4—Ce168.138 (5)
Ni2—Ce1—Ni3iii136.276 (4)Ce1v—Si4—Ce183.72 (3)
Si4—Ce1—Ni3iii99.674 (9)Ce1xiii—Si4—Ce1136.276 (11)
Si5—Ce1—Ni3iii43.723 (11)Ce1vii—Si4—Ce180.33 (2)
Ni3—Ce1—Ni3iii80.32 (2)Ce1xii—Si4—Ce180.33 (2)
Si5ii—Ce1—Ni3iii96.27 (3)Ce1viii—Si4—Ce1136.276 (11)
Li3iii—Ce1—Ni3iii0.0Li3xii—Si5—Li3iii120.0
Si4iv—Ni2—Si4ii120.0Li3xii—Si5—Ni3xii0.0
Si4iv—Ni2—Si4120.0Li3iii—Si5—Ni3xii120.0
Si4ii—Ni2—Si4120.0Li3xii—Si5—Ni3iii120.0
Si4iv—Ni2—Ce1v138.138 (15)Li3iii—Si5—Ni3iii0.0
Si4ii—Ni2—Ce1v68.138 (5)Ni3xii—Si5—Ni3iii120.0
Si4—Ni2—Ce1v68.138 (5)Li3xii—Si5—Ni3120.0
Si4iv—Ni2—Ce1vi68.138 (5)Li3iii—Si5—Ni3120.0
Si4ii—Ni2—Ce1vi68.138 (5)Ni3xii—Si5—Ni3120.0
Si4—Ni2—Ce1vi138.138 (15)Ni3iii—Si5—Ni3120.0
Ce1v—Ni2—Ce1vi80.33 (2)Li3xii—Si5—Ce1138.136 (15)
Si4iv—Ni2—Ce1vii68.138 (5)Li3iii—Si5—Ce168.139 (5)
Si4ii—Ni2—Ce1vii138.138 (15)Ni3xii—Si5—Ce1138.136 (15)
Si4—Ni2—Ce1vii68.138 (5)Ni3iii—Si5—Ce168.139 (5)
Ce1v—Ni2—Ce1vii136.276 (11)Ni3—Si5—Ce168.139 (5)
Ce1vi—Ni2—Ce1vii136.276 (11)Li3xii—Si5—Ce1xii68.139 (5)
Si4iv—Ni2—Ce1iv68.138 (5)Li3iii—Si5—Ce1xii68.139 (5)
Si4ii—Ni2—Ce1iv68.138 (5)Ni3xii—Si5—Ce1xii68.139 (5)
Si4—Ni2—Ce1iv138.138 (15)Ni3iii—Si5—Ce1xii68.139 (5)
Ce1v—Ni2—Ce1iv136.276 (11)Ni3—Si5—Ce1xii138.136 (15)
Ce1vi—Ni2—Ce1iv83.72 (3)Ce1—Si5—Ce1xii80.32 (2)
Ce1vii—Ni2—Ce1iv80.33 (2)Li3xii—Si5—Ce1ix68.139 (5)
Si4iv—Ni2—Ce1viii68.138 (5)Li3iii—Si5—Ce1ix138.136 (15)
Si4ii—Ni2—Ce1viii138.138 (15)Ni3xii—Si5—Ce1ix68.139 (5)
Si4—Ni2—Ce1viii68.138 (5)Ni3iii—Si5—Ce1ix138.136 (15)
Ce1v—Ni2—Ce1viii80.33 (2)Ni3—Si5—Ce1ix68.139 (5)
Ce1vi—Ni2—Ce1viii80.33 (2)Ce1—Si5—Ce1ix136.277 (11)
Ce1vii—Ni2—Ce1viii83.72 (3)Ce1xii—Si5—Ce1ix136.277 (11)
Ce1iv—Ni2—Ce1viii136.276 (11)Li3xii—Si5—Ce1xiv68.139 (5)
Si4iv—Ni2—Ce1138.138 (15)Li3iii—Si5—Ce1xiv68.139 (5)
Si4ii—Ni2—Ce168.138 (5)Ni3xii—Si5—Ce1xiv68.139 (5)
Si4—Ni2—Ce168.138 (5)Ni3iii—Si5—Ce1xiv68.139 (5)
Ce1v—Ni2—Ce183.72 (3)Ni3—Si5—Ce1xiv138.136 (15)
Ce1vi—Ni2—Ce1136.276 (11)Ce1—Si5—Ce1xiv136.277 (11)
Ce1vii—Ni2—Ce180.33 (2)Ce1xii—Si5—Ce1xiv83.73 (3)
Ce1iv—Ni2—Ce180.33 (2)Ce1ix—Si5—Ce1xiv80.32 (2)
Ce1viii—Ni2—Ce1136.276 (11)Li3xii—Si5—Ce1vii68.139 (5)
Si5iv—Ni3—Si5ii120.0Li3iii—Si5—Ce1vii138.136 (15)
Si5iv—Ni3—Si5120.0Ni3xii—Si5—Ce1vii68.139 (5)
Si5ii—Ni3—Si5120.0Ni3iii—Si5—Ce1vii138.136 (15)
Si5iv—Ni3—Ce1138.136 (15)Ni3—Si5—Ce1vii68.139 (5)
Si5ii—Ni3—Ce168.139 (5)Ce1—Si5—Ce1vii80.32 (2)
Si5—Ni3—Ce168.139 (5)Ce1xii—Si5—Ce1vii80.32 (2)
Si5iv—Ni3—Ce1iv68.139 (5)Ce1ix—Si5—Ce1vii83.73 (3)
Si5ii—Ni3—Ce1iv68.139 (5)Ce1xiv—Si5—Ce1vii136.277 (11)
Si5—Ni3—Ce1iv138.136 (15)Li3xii—Si5—Ce1xi138.136 (15)
Ce1—Ni3—Ce1iv80.32 (2)Li3iii—Si5—Ce1xi68.139 (5)
Si5iv—Ni3—Ce1ix68.139 (5)Ni3xii—Si5—Ce1xi138.136 (15)
Si5ii—Ni3—Ce1ix138.136 (15)Ni3iii—Si5—Ce1xi68.139 (5)
Si5—Ni3—Ce1ix68.139 (5)Ni3—Si5—Ce1xi68.139 (5)
Ce1—Ni3—Ce1ix136.277 (11)Ce1—Si5—Ce1xi83.73 (3)
Ce1iv—Ni3—Ce1ix136.277 (11)Ce1xii—Si5—Ce1xi136.277 (11)
Si5iv—Ni3—Ce1x68.139 (5)Ce1ix—Si5—Ce1xi80.32 (2)
Si5ii—Ni3—Ce1x68.139 (5)Ce1xiv—Si5—Ce1xi80.32 (2)
Si5—Ni3—Ce1x138.136 (15)Ce1vii—Si5—Ce1xi136.277 (11)
Symmetry codes: (i) x1, y1, z; (ii) x, y1, z; (iii) x1, y, z; (iv) x+1, y, z; (v) x+y, x, z; (vi) x+y+1, x, z; (vii) x+1, y+1, z; (viii) x+y+1, x+1, z; (ix) x+y+1, x+1, z+1; (x) x+y+1, x, z+1; (xi) x+y, x, z+1; (xii) x, y+1, z; (xiii) x+y, x+1, z; (xiv) x+y, x+1, z+1.

Experimental details

Crystal data
Chemical formulaCe2Li0.39Ni1.61Si2
Mr433.38
Crystal system, space groupHexagonal, P6m2
Temperature (K)293
a, c (Å)4.0596 (3), 8.4011 (17)
V3)119.90 (3)
Z1
Radiation typeMo Kα
µ (mm1)25.16
Crystal size (mm)0.07 × 0.06 × 0.01
Data collection
DiffractometerOxford Diffraction Xcalibur3 CCD
diffractometer
Absorption correctionAnalytical
(CrysAlis RED; Oxford Diffraction, 2008)
Tmin, Tmax0.228, 0.787
No. of measured, independent and
observed [I > 2σ(I)] reflections
1089, 141, 133
Rint0.119
(sin θ/λ)max1)0.645
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.025, 0.099, 1.30
No. of reflections141
No. of parameters13
Δρmax, Δρmin (e Å3)1.08, 1.43
Absolute structureFlack (1983), 56 Friedel pairs
Absolute structure parameter0.4 (3)

Computer programs: CrysAlis CCD (Oxford Diffraction, 2008), CrysAlis RED (Oxford Diffraction, 2008), SHELXS97 (Sheldrick, 2008), DIAMOND (Brandenburg, 2006), SHELXL97 (Sheldrick, 2008)/publCIF (Westrip, 2010).

 

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