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The hydro­lysis product [Ga2(C3H7)4(OH)2]·C14H32N4, derived from the tetrakis­(triiso­propyl­gallium)–1,4,8,11-tetra­methyl-1,4,8,11-tetra­aza­cyclo­tetra­decane (1/1) adduct, consists of a centrosymmetric [iPr2Ga(μ-OH)]2 unit hydrogen bonded through the hydroxyl group to a nitro­gen on an adjacent centrosymmetric 1,4,8,11-tetra­methyl-1,4,8,11-tetra­aza­cyclo­tetra­decane molecule, resulting in the generation of a molecular chain through the crystal.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S0108270100012816/jz1426sup1.cif
Contains datablocks global, I

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S0108270100012816/jz1426Isup2.hkl
Contains datablock I

CCDC reference: 156150

Comment top

The product of controlled hydrolysis of gallium trialkyls depends on the steric bulk of the alkyl group and may result in tetramers, [Me2Ga(µ2–OH)]4 (Smith & Hoard, 1959), trimers, [tBu2Ga(µ2–OH)]3 (Naiini et al., 1993; Atwood et al., 1993), or dimers [R2Ga(µ–OH)]2 [R = CH(SiMe3)2, mesityl, C6H4–2–CH2NMe2] (Uhl et al., 1996; Storre et al., 1996; Coggin et al., 1993). Increasing the steric congestion by substitution of the OH group by an alkoxide also results in a decrease in the degree of oligomerization, e.g. [tBu2Ga(µ–OtBu)]2 (Cleaver et al., 1994). This latter effect may apparently be mimicked by hydrogen bonding of the bridging hydroxyl species to an appropriate base e.g. [{Me3Ga(µ–OH)}3·3H2O]2.18-crown-6 (Croucher et al., 1999). This feature has allowed us to determine the molecular structure of [iPr2Ga(µ–OH)]2 as a hydrogen-bonded adduct of 1,4,8,11–tetramethyl–1,4,8,11–tetraazacyclotetradecane, (I). \sch

The molecule contains a centrosymmetric Ga2(µ–OH)2 four-membered ring with gallium-bonded isopropyl groups above and below the ring plane. The hydroxyl protons are located 0.38 (2) Å above/below this plane, which subtends an angle of ~152° to the O–H vector.

The structure is analogous to other [R2Ga(µ–OH)]2 species and also to the chloride-substituted compounds [R(Cl)Ga(µ–OH)]2 [R = 2,4,6–iPr3Ph, 2,4,6–(CF3)3Ph, (Me3Si)3Si] (Twamley & Power, 1999; Schluter et al., 1994; Linti et al., 1996).

The intra-annular Ga—Ga vector, 2.9425 (7) Å, is the shortest of the reported dialkyl derivatives, [R2Ga(µ–OH)]2, (2.970–3.064 Å) presumably due to reduced steric hindrance. Accordingly, the internal angle subtended at gallium, 81.04 (6)°, is larger than that found in the other six examples of this structural type (78.8–80.6°) and the corresponding angle at oxygen, 98.96 (6)°, is the smallest (99.1–102.1°). The length of Ga–O bonds, 1.9339 (12) and 1.9368 (12) Å, is compatible with the range of Ga—O bonds found in the other four-membered-ring species, 1.893–1.969 Å. However, the Ga—O bonds in the chloride-substituted derivatives, [R(Cl)Ga(µ–OH)]2, are generally shorter, which leads to shorter intra-annular Ga—Ga vectors (2.887–2.939 Å). The Ga—C bonds are some 0.03 Å shorter than the average found for adducts of iPr3Ga (Coward et al., 2000), where the bond length sequence Ga—Me < Ga—Et < Ga—iPr was demonstrated. However, they are comparable to those in other µ2–OH gallium species such as [Me2Ga(µ2–OH)]4 (Smith & Hoard, 1959) and [tBu2Ga(µ2–OH)]3 (Atwood et al., 1993), although there are insufficient accurately determined data to confirm a similar sequence.

The four N atoms of the tetraazacyclotetradecane ring are crystallographically constrained to be coplanar. This plane subtends an angle of 82.71 (5)° to the plane of the Ga2O2 ring. Two independent ring configurations were found in the crystal stucture of free 1,4,8,11-tetramethyl-1,4,8–11-tetraazacyclotetradecane, RSSR trans-IV and RRSS trans-III (Willey et al., 1993; Kelly et al., 1996). The tetraazacyclotetradecane ring in the gallium adduct adopts the higher energy RRSS trans-III configuration, which facilitates strong hydrogen bonding between N2 and the hydroxyl hydrogen, 2.03 (2) Å. The hydrogen bonds are approximately parallel to the c axis, resulting in a molecular chain running throughout the crystal. Apart from a possible intra-annular interaction between N1 and H3a (2.40 Å), there are no non-classical hydrogen bonds present.

Experimental top

The 4:1 adduct of triisopropylgallium and 1,4,8,11-tetramethyl-1,4,8,11-tetraazacyclotetradecane (Coward et al., 2000) was dissolved in dry toluene and left to crystallize at 243 K. After one week there was evident decomposition, presumably due to hydrolysis. A few well shaped crystals present in the mixture were isolated and dried in a stream of dinitrogen.

Refinement top

The H atoms were placed in calculated positions and allowed to ride except for the hydroxyl hydrogen which was identified from a difference map and allowed to refine freely.

Computing details top

Data collection: XSCANS (Siemens, 1996); cell refinement: XSCANS; data reduction: XSCANS; program(s) used to solve structure: SHELXS97 (Sheldrick, 1997); program(s) used to refine structure: SHELXL97 (Sheldrick, 1997); molecular graphics: SHELXTL-Plus (Siemens, 1995); software used to prepare material for publication: SHELXL97.

Figures top
[Figure 1] Fig. 1. The molecular structure of (I) with the displacement ellipsoids drawn at the 50% probability level.
bis(µ 2-hydroxo)bis(diipropylgallium). 1,4,8,11-tetramethyl-1,4,8,11-tetraazacyclotetradecane top
Crystal data top
[Ga2(C3H7)4(OH)2]·C14H32N4Z = 1
Mr = 602.24F(000) = 323
Triclinic, P1Dx = 1.209 Mg m3
a = 8.5877 (7) ÅMo Kα radiation, λ = 0.71073 Å
b = 9.7161 (17) ÅCell parameters from 32 reflections
c = 11.1425 (10) Åθ = 5.4–15.0°
α = 113.138 (8)°µ = 1.65 mm1
β = 97.516 (4)°T = 223 K
γ = 98.551 (7)°Block, colourless
V = 826.92 (18) Å30.45 × 0.30 × 0.25 mm
Data collection top
Siemens P4
diffractometer
3277 reflections with I > 2σ(I)
Radiation source: fine-focus sealed tubeRint = 0.018
Graphite monochromatorθmax = 27.5°, θmin = 2.0°
profile fitting of θ/2θ scansh = 111
Absorption correction: ψ scan
(XPREP in SHELXTL-Plus; Siemens 1995)
k = 1111
Tmin = 0.568, Tmax = 0.661l = 1414
4385 measured reflections3 standard reflections every 97 reflections
3645 independent reflections intensity decay: 5%
Refinement top
Refinement on F20 restraints
Least-squares matrix: fullH atoms treated by a mixture of independent and constrained refinement
R[F2 > 2σ(F2)] = 0.026
wR(F2) = 0.065(Δ/σ)max = 0.001
S = 1.04Δρmax = 0.34 e Å3
3645 reflectionsΔρmin = 0.22 e Å3
164 parameters
Crystal data top
[Ga2(C3H7)4(OH)2]·C14H32N4γ = 98.551 (7)°
Mr = 602.24V = 826.92 (18) Å3
Triclinic, P1Z = 1
a = 8.5877 (7) ÅMo Kα radiation
b = 9.7161 (17) ŵ = 1.65 mm1
c = 11.1425 (10) ÅT = 223 K
α = 113.138 (8)°0.45 × 0.30 × 0.25 mm
β = 97.516 (4)°
Data collection top
Siemens P4
diffractometer
3277 reflections with I > 2σ(I)
Absorption correction: ψ scan
(XPREP in SHELXTL-Plus; Siemens 1995)
Rint = 0.018
Tmin = 0.568, Tmax = 0.6613 standard reflections every 97 reflections
4385 measured reflections intensity decay: 5%
3645 independent reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0260 restraints
wR(F2) = 0.065H atoms treated by a mixture of independent and constrained refinement
S = 1.04Δρmax = 0.34 e Å3
3645 reflectionsΔρmin = 0.22 e Å3
164 parameters
Special details top

Experimental. %T The crystal was mounted on a glass pin using Fomblin YR-1800 oil (Lancaster Synthesis).

The crystal was coated with Fomblin YR–1800 oil [Lancaster Synthesis, Ref. 17548 (CAS 69991–67–9)], mounted on a glass fibre and cooled to 223 K. Counting statistics indicated a non-centrosymmetric cell [mean $|$E*E$-1$$|$ = 0.714] and the structure could only be solved in P1 (Patterson and direct methods). However, following identification of all non-hydrogen atoms from difference maps and inspection of the Flack (1983) parameter, which suggested a racemic twin, it was clear that the correct space group was $Pοverline 1$. The positions of the Ga and O were calculated for this space group and and a successful solution was subsequently obtained.

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
Ga0.53668 (2)0.66406 (2)0.528901 (17)0.03091 (7)
O0.40399 (15)0.52378 (13)0.57831 (12)0.0354 (3)
H10.383 (3)0.541 (3)0.650 (2)0.049 (6)*
C60.7236 (2)0.8007 (2)0.67372 (17)0.0388 (4)
H60.74620.75020.73390.047*
C610.6890 (3)0.9559 (2)0.7565 (2)0.0561 (5)
H61A0.78011.01590.82970.084*
H61B0.59370.94050.79170.084*
H61C0.67131.00990.70070.084*
C620.8728 (3)0.8212 (3)0.6163 (2)0.0571 (5)
H62A0.85480.87280.55860.086*
H62B0.89390.72140.56530.086*
H62C0.96460.88220.68860.086*
C70.3975 (2)0.7377 (2)0.42098 (18)0.0386 (4)
H70.46770.81580.40410.046*
C710.2771 (3)0.8157 (3)0.4988 (2)0.0582 (6)
H71A0.21150.85270.44540.087*
H71B0.33500.90140.58130.087*
H71C0.20840.74240.51900.087*
C720.3091 (3)0.6111 (3)0.2862 (2)0.0522 (5)
H72A0.23710.53400.29960.078*
H72B0.38660.56440.23680.078*
H72C0.24730.65430.23620.078*
N10.27516 (19)0.30534 (17)0.90116 (15)0.0407 (3)
C110.1385 (3)0.2823 (3)0.9623 (2)0.0639 (6)
H11A0.06180.18860.90150.096*
H11B0.08680.36860.98110.096*
H11C0.17630.27431.04470.096*
C10.2215 (2)0.3106 (2)0.77267 (18)0.0486 (5)
H1A0.13700.21880.71730.058*
H1B0.31220.30590.72730.058*
C20.1576 (2)0.4503 (3)0.7804 (2)0.0530 (5)
H2A0.08670.42450.69470.064*
H2B0.09200.47410.84860.064*
N20.2813 (2)0.5889 (2)0.81193 (15)0.0431 (4)
C210.2001 (3)0.7068 (3)0.7979 (3)0.0716 (8)
H21A0.12920.66430.71070.107*
H21B0.28010.79410.80720.107*
H21C0.13770.73950.86650.107*
C30.3790 (3)0.6456 (2)0.94756 (18)0.0431 (4)
H3A0.42080.56100.95710.052*
H3B0.30940.67771.01190.052*
C40.5192 (3)0.7786 (2)0.9817 (2)0.0494 (5)
H4A0.47830.87010.98960.059*
H4B0.57930.75420.90980.059*
C50.6313 (3)0.8118 (2)1.1126 (2)0.0510 (5)
H5A0.70510.91181.14340.061*
H5B0.56730.81761.18040.061*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
Ga0.03262 (10)0.02896 (10)0.03068 (10)0.00787 (7)0.00861 (7)0.01104 (7)
O0.0417 (7)0.0324 (6)0.0343 (6)0.0103 (5)0.0180 (5)0.0125 (5)
C60.0414 (9)0.0361 (9)0.0343 (8)0.0058 (7)0.0026 (7)0.0127 (7)
C610.0582 (13)0.0394 (10)0.0545 (12)0.0035 (9)0.0124 (10)0.0055 (9)
C620.0382 (10)0.0646 (14)0.0547 (12)0.0066 (9)0.0059 (9)0.0137 (10)
C70.0387 (9)0.0412 (9)0.0417 (9)0.0104 (7)0.0113 (7)0.0220 (8)
C710.0604 (13)0.0681 (14)0.0605 (13)0.0349 (12)0.0214 (11)0.0317 (11)
C720.0441 (11)0.0632 (13)0.0442 (11)0.0096 (9)0.0004 (9)0.0211 (10)
N10.0431 (8)0.0392 (8)0.0324 (7)0.0000 (6)0.0125 (6)0.0093 (6)
C110.0566 (13)0.0780 (16)0.0523 (12)0.0026 (12)0.0221 (11)0.0251 (12)
C10.0431 (10)0.0565 (12)0.0323 (9)0.0018 (9)0.0079 (8)0.0087 (8)
C20.0353 (10)0.0857 (16)0.0410 (10)0.0173 (10)0.0101 (8)0.0276 (10)
N20.0459 (9)0.0610 (10)0.0370 (8)0.0286 (8)0.0171 (7)0.0270 (7)
C210.0844 (18)0.103 (2)0.0690 (15)0.0680 (17)0.0364 (14)0.0561 (15)
C30.0579 (12)0.0447 (10)0.0354 (9)0.0187 (9)0.0161 (8)0.0213 (8)
C40.0743 (14)0.0342 (9)0.0484 (11)0.0167 (9)0.0227 (10)0.0218 (8)
C50.0728 (14)0.0288 (9)0.0421 (10)0.0023 (9)0.0160 (10)0.0074 (7)
Geometric parameters (Å, º) top
Ga—Oi1.9339 (12)N1—C111.463 (2)
Ga—O1.9368 (12)N1—C11.468 (2)
Ga—C71.9853 (18)C11—H11A0.9700
Ga—C61.9872 (18)C11—H11B0.9700
Ga—Gai2.9425 (7)C11—H11C0.9700
O—Gai1.9339 (12)C1—C21.514 (3)
O—H10.80 (2)C1—H1A0.9800
C6—C611.524 (3)C1—H1B0.9800
C6—C621.526 (3)C2—N21.473 (3)
C6—H60.9900C2—H2A0.9800
C61—H61A0.9700C2—H2B0.9800
C61—H61B0.9700N2—C31.472 (2)
C61—H61C0.9700N2—C211.474 (2)
C62—H62A0.9700C21—H21A0.9700
C62—H62B0.9700C21—H21B0.9700
C62—H62C0.9700C21—H21C0.9700
C7—C721.522 (3)C3—C41.515 (3)
C7—C711.532 (3)C3—H3A0.9800
C7—H70.9900C3—H3B0.9800
C71—H71A0.9700C4—C51.526 (3)
C71—H71B0.9700C4—H4A0.9800
C71—H71C0.9700C4—H4B0.9800
C72—H72A0.9700C5—N1ii1.460 (3)
C72—H72B0.9700C5—H5A0.9800
C72—H72C0.9700C5—H5B0.9800
N1—C5ii1.460 (3)
Oi—Ga—O81.04 (6)C5ii—N1—C11111.04 (18)
Oi—Ga—C7112.84 (7)C5ii—N1—C1111.59 (15)
O—Ga—C7109.58 (7)C11—N1—C1111.02 (17)
Oi—Ga—C6109.36 (7)N1—C11—H11A109.5
O—Ga—C6112.91 (7)N1—C11—H11B109.5
C7—Ga—C6123.30 (8)H11A—C11—H11B109.5
Oi—Ga—Gai40.56 (4)N1—C11—H11C109.5
O—Ga—Gai40.48 (4)H11A—C11—H11C109.5
C7—Ga—Gai118.40 (6)H11B—C11—H11C109.5
C6—Ga—Gai118.30 (5)N1—C1—C2115.56 (16)
Gai—O—Ga98.96 (6)N1—C1—H1A108.4
Gai—O—H1122.8 (16)C2—C1—H1A108.4
Ga—O—H1127.0 (16)N1—C1—H1B108.4
C61—C6—C62110.70 (17)C2—C1—H1B108.4
C61—C6—Ga112.18 (13)H1A—C1—H1B107.5
C62—C6—Ga110.46 (13)N2—C2—C1115.24 (16)
C61—C6—H6107.8N2—C2—H2A108.5
C62—C6—H6107.8C1—C2—H2A108.5
Ga—C6—H6107.8N2—C2—H2B108.5
C6—C61—H61A109.5C1—C2—H2B108.5
C6—C61—H61B109.5H2A—C2—H2B107.5
H61A—C61—H61B109.5C3—N2—C2111.18 (15)
C6—C61—H61C109.5C3—N2—C21110.71 (17)
H61A—C61—H61C109.5C2—N2—C21108.36 (18)
H61B—C61—H61C109.5N2—C21—H21A109.5
C6—C62—H62A109.5N2—C21—H21B109.5
C6—C62—H62B109.5H21A—C21—H21B109.5
H62A—C62—H62B109.5N2—C21—H21C109.5
C6—C62—H62C109.5H21A—C21—H21C109.5
H62A—C62—H62C109.5H21B—C21—H21C109.5
H62B—C62—H62C109.5N2—C3—C4114.00 (16)
C72—C7—C71110.16 (17)N2—C3—H3A108.8
C72—C7—Ga113.03 (13)C4—C3—H3A108.8
C71—C7—Ga110.56 (13)N2—C3—H3B108.8
C72—C7—H7107.6C4—C3—H3B108.8
C71—C7—H7107.6H3A—C3—H3B107.6
Ga—C7—H7107.6C3—C4—C5110.82 (16)
C7—C71—H71A109.5C3—C4—H4A109.5
C7—C71—H71B109.5C5—C4—H4A109.5
H71A—C71—H71B109.5C3—C4—H4B109.5
C7—C71—H71C109.5C5—C4—H4B109.5
H71A—C71—H71C109.5H4A—C4—H4B108.1
H71B—C71—H71C109.5N1ii—C5—C4112.31 (15)
C7—C72—H72A109.5N1ii—C5—H5A109.1
C7—C72—H72B109.5C4—C5—H5A109.1
H72A—C72—H72B109.5N1ii—C5—H5B109.1
C7—C72—H72C109.5C4—C5—H5B109.1
H72A—C72—H72C109.5H5A—C5—H5B107.9
H72B—C72—H72C109.5
Oi—Ga—O—Gai0.0Gai—Ga—C7—C7222.72 (16)
C7—Ga—O—Gai111.16 (7)Oi—Ga—C7—C71146.10 (14)
C6—Ga—O—Gai107.32 (7)O—Ga—C7—C7157.80 (16)
Oi—Ga—C6—C61176.02 (13)C6—Ga—C7—C7178.92 (16)
O—Ga—C6—C6195.75 (14)Gai—Ga—C7—C71101.29 (14)
C7—Ga—C6—C6139.72 (17)C5ii—N1—C1—C2166.47 (17)
Gai—Ga—C6—C61140.49 (12)C11—N1—C1—C269.1 (2)
Oi—Ga—C6—C6251.99 (15)N1—C1—C2—N281.3 (2)
O—Ga—C6—C62140.23 (13)C1—C2—N2—C365.7 (2)
C7—Ga—C6—C6284.31 (16)C1—C2—N2—C21172.46 (16)
Gai—Ga—C6—C6295.48 (14)C2—N2—C3—C4174.27 (16)
Oi—Ga—C7—C7222.09 (16)C21—N2—C3—C465.2 (2)
O—Ga—C7—C7266.21 (15)N2—C3—C4—C5169.74 (16)
C6—Ga—C7—C72157.07 (13)C3—C4—C5—N1ii72.3 (2)
Symmetry codes: (i) x+1, y+1, z+1; (ii) x+1, y+1, z+2.
Hydrogen-bond geometry (Å, º) top
D—H···AD—HH···AD···AD—H···A
O—H1···N20.80 (2)2.03 (2)2.8119 (19)167 (2)

Experimental details

Crystal data
Chemical formula[Ga2(C3H7)4(OH)2]·C14H32N4
Mr602.24
Crystal system, space groupTriclinic, P1
Temperature (K)223
a, b, c (Å)8.5877 (7), 9.7161 (17), 11.1425 (10)
α, β, γ (°)113.138 (8), 97.516 (4), 98.551 (7)
V3)826.92 (18)
Z1
Radiation typeMo Kα
µ (mm1)1.65
Crystal size (mm)0.45 × 0.30 × 0.25
Data collection
DiffractometerSiemens P4
diffractometer
Absorption correctionψ scan
(XPREP in SHELXTL-Plus; Siemens 1995)
Tmin, Tmax0.568, 0.661
No. of measured, independent and
observed [I > 2σ(I)] reflections
4385, 3645, 3277
Rint0.018
(sin θ/λ)max1)0.650
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.026, 0.065, 1.04
No. of reflections3645
No. of parameters164
H-atom treatmentH atoms treated by a mixture of independent and constrained refinement
Δρmax, Δρmin (e Å3)0.34, 0.22

Computer programs: XSCANS (Siemens, 1996), XSCANS, SHELXS97 (Sheldrick, 1997), SHELXL97 (Sheldrick, 1997), SHELXTL-Plus (Siemens, 1995), SHELXL97.

Selected geometric parameters (Å, º) top
Ga—Oi1.9339 (12)Ga—C61.9872 (18)
Ga—O1.9368 (12)Ga—Gai2.9425 (7)
Ga—C71.9853 (18)O—H10.80 (2)
Oi—Ga—O81.04 (6)C7—Ga—C6123.30 (8)
Oi—Ga—C7112.84 (7)Gai—O—Ga98.96 (6)
O—Ga—C7109.58 (7)Gai—O—H1122.8 (16)
Oi—Ga—C6109.36 (7)Ga—O—H1127.0 (16)
O—Ga—C6112.91 (7)
Symmetry code: (i) x+1, y+1, z+1.
Hydrogen-bond geometry (Å, º) top
D—H···AD—HH···AD···AD—H···A
O—H1···N20.80 (2)2.03 (2)2.8119 (19)167 (2)
 

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