Simulation of Renninger scans for heteroepitaxic layers

In this work, X-ray Renninger scans for semiconductor single-crystal and heteroepitaxic structures are simulated. The simulation program is based on the iterative method for the calculation of multiple diffraction in imperfect crystals. The calculated diffracted-beam path length takes into account the small thickness of the heteroepitaxic layers in order to reproduce the survival of only surface secondary reflections in the layer Renninger scans. Applications of these simulations for bulk material (GaAs, GaSb), binary layers (GaAs/Si) and ternary layers (InGaAs/GaAs) show very good agreement with the corresponding experimental scans.