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The local atomic structure of a Ga1-xMnxAs (x = 0.07) layer during the annealing process was studied by means of X-ray diffuse scattering. The difference between the pair-distribution functions before and after annealing indicated the fraction of atoms that changed concentration and identified them to be exclusively interstitial atoms at the centres of gallium and/or arsenic tetrahedra in the GaMnAs unit cell.