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Geometric parameters of the title compound, tri-tert-butyl­diethyl­galliumanti­mony(Ga-Sb), [tBu3Ga-Sb(tBu)Et2] or [GaSb(C2H5)2(C4H9)4], reflect the influence of the larger steric demand of the tBu ligand compared with that of the ethyl groups.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S1600536807021149/bt2352sup1.cif
Contains datablocks I, global

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S1600536807021149/bt2352Isup2.hkl
Contains datablock I

CCDC reference: 650586

Key indicators

  • Single-crystal X-ray study
  • T = 120 K
  • Mean [sigma](C-C) = 0.005 Å
  • R factor = 0.037
  • wR factor = 0.074
  • Data-to-parameter ratio = 28.6

checkCIF/PLATON results

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Alert level C PLAT042_ALERT_1_C Calc. and Rep. MoietyFormula Strings Differ .... ? PLAT220_ALERT_2_C Large Non-Solvent C Ueq(max)/Ueq(min) ... 3.17 Ratio PLAT242_ALERT_2_C Check Low Ueq as Compared to Neighbors for Sb1 PLAT242_ALERT_2_C Check Low Ueq as Compared to Neighbors for C13
0 ALERT level A = In general: serious problem 0 ALERT level B = Potentially serious problem 4 ALERT level C = Check and explain 0 ALERT level G = General alerts; check 1 ALERT type 1 CIF construction/syntax error, inconsistent or missing data 3 ALERT type 2 Indicator that the structure model may be wrong or deficient 0 ALERT type 3 Indicator that the structure quality may be low 0 ALERT type 4 Improvement, methodology, query or suggestion 0 ALERT type 5 Informative message, check

Comment top

Lewis acidic trialkylgallanes GaR3 generally react with Lewis basic group 15 organyles ER'3 (E = N, P, As, Sb, Bi) with formation of adducts of the type R3Ga—ER'3. The acid–base interaction within the adducts becomes weaker and the thermodynamic stability decreases with increasing atomic number of the central group 15 element owing to an increase in s character of the electron lone pair. The same is true for distibine adducts with trialkylgallanes of the general type [R3Ga]2[Sb2R'4]. In solution, these adducts are stable at low temperature (253 K), whereas at ambient temperature, Sb—Sb bond cleavage occurs with subsequent formation of heterocyclic stibinogallanes [R2GaSbR'2]x and the corresponding Lewis acid–base adduct R3Ga–SbRR'2, containing a mixed substituted trialkylstibine. The thermodynamic stability of Me3Ga–EMe3 adducts (E = N, P, As, Sb) decreases from NMe3 to SbMe3, while BiMe3 did not react (Coates, 1951). Since then, numerous adducts with strong Lewis basic amines and phosphines have been prepared and structurally characterized, whereas the first completely alkyl-substituted gallane–stibine adducts tBu3Ga—SbR3 [R = Me (Kuczkowski et al., 2005), Et, iPr (Schulz & Nieger, 2000)] became only recently available. In addition, a very few gallane–distibine adducts of the type [tBu3Ga]2[Sb2R'4] [R = Me, Et (Kuczkowski et al., 2001), nPr (Schuchmann et al., 2007)], with the distibine serving as bidentate ligand, were prepared at low temperatures and structurally characterized. These adducts tend to undergo Sb–Sb bond cleavage reactions in solution at ambient temperature, yielding four- and six-membered heterocycles of the general type [R2GaSbR'2]2 and [R2GaSbR'2]3 (Kuczkowski et al., 2001; Schuchmann et al., 2007), and the corresponding adduct R3Ga—E(R)R'2. The Ga and Sb atoms show distorted tetrahedral environments with the organic substituents adopting a staggered conformation related to one other as was previously observed for such adducts. The mean Ga–C [2.037 (3) Å] and Sb–C bond lengths [2.169 (4) Å] and C–Ga–C [116.4 (1)°] and C–Sb–C bond angles [99.1 (1)°] are within typical ranges. However, the larger steric demand of the tBu substituent bound to the Sb atom is clearly reflected by the significantly larger Ga–Sb–C13 bond angle [126.75 (8)°] compared to those of the Et substituents [Ga–Sb–C17 117.5 (2), Ga–Sb–C19 110.4 (2)°]. In addition, the sum of the C–Sb–C bond angles in the title compound [297.3 (1)°] is bigger than that in the corresponding adduct tBu3Ga-SbEt3 (292.8°). The influence of bulky organic substituents on the Ga—Sb distance becomes obvious when comparing the title compound, which shows a Ga—Sb bond length of 2.9243 (5) Å, with the Ga—Sb distances reported for tBu3Ga-SbMe3 [2.8435 (3) Å], tBu3Ga-SbEt3 [2.8479 (5) Å] and tBu3Ga—Sb(iPr)3 [2.9618 (2) Å]. Sb(iPr)3 is sterically more demanding than tBuSbEt2, leading to a larger sum of the C–Sb–C bond angles, whereas SbMe3 and SbEt3 are sterically less hindered.

Related literature top

For related literature, see Coates, 1951; Kuczkowski et al., 2001; Kuczkowski et al., 2005; Schulz & Nieger, 2000 and Schuchmann et al., 2007.

Experimental top

A solution of Sb2Et4 (1.5 mmol, 0.54 g) and tBu3Ga (3 mmol, 0.72 g) in 30 ml of n-hexane was stirred for 5 d at ambient temperature and then stored for 12 h at -30°C. The resulting colorless solid ([tBu2GaSbEt2]2) was isolated by filtration, the filtrate concentrated to 5 ml and again stored for 12 h at -30°C. Colorless crystals of tBu3Ga—Sb(Et)2tBu were obtained (0.56 g, 78%. m.p. 65°C), which can be further purified by sublimation at 55°C at 10-3 mbar. Spectroscopic analysis: 1H NMR (500 MHz; C6D5H; 25°C) δ = 1.13 [9H, s, (CH3)3CSb], 1.19 - 1.28 [10H, m, CH3CH2Sb], 1.24 [27H, s, (CH3)3CGa] p.p.m.. 13C{1H} NMR (125 MHz; C6D5H; 25°C) δ = 7.4 [s, CH3CH2Sb), 12.0 [s, CH3CH2Sb], 29.3 [s, (CH3)3CGa], 30.4 [s, (CH3)3CSb], 31.6 [s, (CH3)3CGa] p.p.m..

Refinement top

Hydrogen atoms were located in Fourier difference maps and refined at idealizeded positions, riding on their parent C atoms, with isotropic displacement parameters Uiso(H) = 1.2Ueq(C) and 1.5Ueq(C-methyl).

Structure description top

Lewis acidic trialkylgallanes GaR3 generally react with Lewis basic group 15 organyles ER'3 (E = N, P, As, Sb, Bi) with formation of adducts of the type R3Ga—ER'3. The acid–base interaction within the adducts becomes weaker and the thermodynamic stability decreases with increasing atomic number of the central group 15 element owing to an increase in s character of the electron lone pair. The same is true for distibine adducts with trialkylgallanes of the general type [R3Ga]2[Sb2R'4]. In solution, these adducts are stable at low temperature (253 K), whereas at ambient temperature, Sb—Sb bond cleavage occurs with subsequent formation of heterocyclic stibinogallanes [R2GaSbR'2]x and the corresponding Lewis acid–base adduct R3Ga–SbRR'2, containing a mixed substituted trialkylstibine. The thermodynamic stability of Me3Ga–EMe3 adducts (E = N, P, As, Sb) decreases from NMe3 to SbMe3, while BiMe3 did not react (Coates, 1951). Since then, numerous adducts with strong Lewis basic amines and phosphines have been prepared and structurally characterized, whereas the first completely alkyl-substituted gallane–stibine adducts tBu3Ga—SbR3 [R = Me (Kuczkowski et al., 2005), Et, iPr (Schulz & Nieger, 2000)] became only recently available. In addition, a very few gallane–distibine adducts of the type [tBu3Ga]2[Sb2R'4] [R = Me, Et (Kuczkowski et al., 2001), nPr (Schuchmann et al., 2007)], with the distibine serving as bidentate ligand, were prepared at low temperatures and structurally characterized. These adducts tend to undergo Sb–Sb bond cleavage reactions in solution at ambient temperature, yielding four- and six-membered heterocycles of the general type [R2GaSbR'2]2 and [R2GaSbR'2]3 (Kuczkowski et al., 2001; Schuchmann et al., 2007), and the corresponding adduct R3Ga—E(R)R'2. The Ga and Sb atoms show distorted tetrahedral environments with the organic substituents adopting a staggered conformation related to one other as was previously observed for such adducts. The mean Ga–C [2.037 (3) Å] and Sb–C bond lengths [2.169 (4) Å] and C–Ga–C [116.4 (1)°] and C–Sb–C bond angles [99.1 (1)°] are within typical ranges. However, the larger steric demand of the tBu substituent bound to the Sb atom is clearly reflected by the significantly larger Ga–Sb–C13 bond angle [126.75 (8)°] compared to those of the Et substituents [Ga–Sb–C17 117.5 (2), Ga–Sb–C19 110.4 (2)°]. In addition, the sum of the C–Sb–C bond angles in the title compound [297.3 (1)°] is bigger than that in the corresponding adduct tBu3Ga-SbEt3 (292.8°). The influence of bulky organic substituents on the Ga—Sb distance becomes obvious when comparing the title compound, which shows a Ga—Sb bond length of 2.9243 (5) Å, with the Ga—Sb distances reported for tBu3Ga-SbMe3 [2.8435 (3) Å], tBu3Ga-SbEt3 [2.8479 (5) Å] and tBu3Ga—Sb(iPr)3 [2.9618 (2) Å]. Sb(iPr)3 is sterically more demanding than tBuSbEt2, leading to a larger sum of the C–Sb–C bond angles, whereas SbMe3 and SbEt3 are sterically less hindered.

For related literature, see Coates, 1951; Kuczkowski et al., 2001; Kuczkowski et al., 2005; Schulz & Nieger, 2000 and Schuchmann et al., 2007.

Computing details top

Data collection: SMART (Bruker, 2002); cell refinement: SAINT (Bruker, 2002); data reduction: SAINT; program(s) used to solve structure: SHELXTL (Bruker, 2002); program(s) used to refine structure: SHELXTL; molecular graphics: SHELXTL; software used to prepare material for publication: SHELXTL.

Figures top
[Figure 1] Fig. 1. Molecular structure with hydrogen atoms omitted. Displacement ellipsoids are drawn at the 50% probability level.
[Figure 2] Fig. 2. Crystal packing viewed along [100].
[Figure 3] Fig. 3. Reaction pathway.
tri-tert-butyldiethylgalliumantimony(Ga—Sb) top
Crystal data top
[GaSb(C2H5)2(C4H9)4]F(000) = 992
Mr = 478.04Dx = 1.334 Mg m3
Monoclinic, P21/nMo Kα radiation, λ = 0.71073 Å
Hall symbol: -P 2ynCell parameters from 986 reflections
a = 9.1138 (16) Åθ = 2.5–26.7°
b = 23.698 (4) ŵ = 2.27 mm1
c = 11.027 (2) ÅT = 120 K
β = 91.479 (4)°Block, colourless
V = 2380.7 (7) Å30.22 × 0.20 × 0.16 mm
Z = 4
Data collection top
Bruker SMART APEX
diffractometer
5684 independent reflections
Radiation source: sealed tube4418 reflections with I > 2σ(I)
Graphite monochromatorRint = 0.082
φ and ω scansθmax = 27.9°, θmin = 1.7°
Absorption correction: multi-scan
(SADABS; Bruker, 2002)
h = 1111
Tmin = 0.624, Tmax = 0.699k = 3131
20988 measured reflectionsl = 1414
Refinement top
Refinement on F2Primary atom site location: structure-invariant direct methods
Least-squares matrix: fullSecondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.037Hydrogen site location: difference Fourier map
wR(F2) = 0.074H-atom parameters constrained
S = 0.95 w = 1/[σ2(Fo2) + (0.0303P)2]
where P = (Fo2 + 2Fc2)/3
5684 reflections(Δ/σ)max = 0.001
199 parametersΔρmax = 0.95 e Å3
0 restraintsΔρmin = 0.95 e Å3
Crystal data top
[GaSb(C2H5)2(C4H9)4]V = 2380.7 (7) Å3
Mr = 478.04Z = 4
Monoclinic, P21/nMo Kα radiation
a = 9.1138 (16) ŵ = 2.27 mm1
b = 23.698 (4) ÅT = 120 K
c = 11.027 (2) Å0.22 × 0.20 × 0.16 mm
β = 91.479 (4)°
Data collection top
Bruker SMART APEX
diffractometer
5684 independent reflections
Absorption correction: multi-scan
(SADABS; Bruker, 2002)
4418 reflections with I > 2σ(I)
Tmin = 0.624, Tmax = 0.699Rint = 0.082
20988 measured reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0370 restraints
wR(F2) = 0.074H-atom parameters constrained
S = 0.95Δρmax = 0.95 e Å3
5684 reflectionsΔρmin = 0.95 e Å3
199 parameters
Special details top

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
Sb10.71254 (2)0.158353 (8)0.431944 (19)0.02535 (7)
Ga10.78052 (4)0.087011 (13)0.22442 (3)0.02383 (9)
C10.7108 (4)0.01031 (13)0.2837 (3)0.0325 (7)
C20.7744 (5)0.03402 (14)0.1981 (4)0.0502 (10)
H2A0.74330.07170.22330.075*
H2B0.88180.03180.20140.075*
H2C0.73850.02680.11500.075*
C30.7617 (4)0.00311 (15)0.4125 (3)0.0420 (9)
H3A0.72490.04030.43550.063*
H3B0.72400.02550.46770.063*
H3C0.86930.00320.41730.063*
C40.5432 (4)0.00410 (15)0.2780 (4)0.0433 (9)
H4A0.51600.03340.30730.065*
H4B0.50760.00880.19400.065*
H4C0.49900.03300.32910.065*
C50.6503 (4)0.12448 (13)0.0946 (3)0.0310 (7)
C60.6332 (5)0.08250 (15)0.0105 (3)0.0450 (9)
H6A0.57070.09900.07480.068*
H6B0.58810.04770.01870.068*
H6C0.73000.07390.04270.068*
C70.4968 (4)0.13883 (16)0.1399 (3)0.0414 (9)
H7A0.43880.15660.07420.062*
H7B0.50570.16490.20870.062*
H7C0.44790.10420.16560.062*
C80.7166 (4)0.17842 (14)0.0457 (3)0.0388 (8)
H8A0.64990.19480.01600.058*
H8B0.81100.16990.00930.058*
H8C0.73170.20540.11210.058*
C91.0008 (3)0.09786 (13)0.2096 (3)0.0294 (7)
C101.0882 (4)0.06349 (15)0.3047 (4)0.0447 (9)
H10A1.19340.06970.29440.067*
H10B1.06590.02330.29430.067*
H10C1.06110.07550.38610.067*
C111.0439 (4)0.07810 (17)0.0837 (4)0.0515 (11)
H11A1.15000.08280.07490.077*
H11B0.99160.10060.02190.077*
H11C1.01790.03820.07340.077*
C121.0490 (4)0.15945 (13)0.2228 (3)0.0342 (7)
H12A1.15570.16200.21520.051*
H12B1.02160.17360.30260.051*
H12C1.00070.18220.15920.051*
C130.8331 (4)0.16198 (13)0.6069 (3)0.0325 (7)
C140.9914 (4)0.17754 (19)0.5847 (4)0.0559 (11)
H14A1.04600.17930.66240.084*
H14B0.99510.21440.54480.084*
H14C1.03560.14900.53270.084*
C150.8294 (5)0.10403 (16)0.6651 (4)0.0538 (11)
H15A0.88290.10510.74340.081*
H15B0.87570.07650.61180.081*
H15C0.72730.09300.67780.081*
C160.7661 (5)0.20555 (18)0.6891 (4)0.0656 (13)
H16A0.82120.20660.76660.098*
H16B0.66370.19550.70350.098*
H16C0.77000.24270.65050.098*
C170.6764 (4)0.24674 (14)0.3980 (4)0.0439 (9)
H17A0.59120.25060.34110.053*
H17B0.64990.26500.47520.053*
C180.8048 (5)0.27849 (14)0.3462 (4)0.0504 (10)
H18A0.89040.27490.40130.076*
H18B0.77900.31840.33690.076*
H18C0.82810.26270.26690.076*
C190.4982 (4)0.13805 (17)0.4982 (4)0.0548 (11)
H19A0.46160.10460.45290.066*
H19B0.51050.12670.58430.066*
C200.3854 (5)0.1806 (3)0.4913 (6)0.103 (2)
H20A0.42400.21610.52440.154*
H20B0.30130.16840.53830.154*
H20C0.35430.18610.40640.154*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
Sb10.02265 (11)0.02651 (10)0.02678 (12)0.00206 (8)0.00157 (8)0.00041 (9)
Ga10.02381 (18)0.02428 (16)0.02328 (18)0.00316 (14)0.00149 (14)0.00031 (14)
C10.0339 (19)0.0278 (15)0.0354 (19)0.0046 (14)0.0043 (15)0.0041 (14)
C20.061 (3)0.0312 (18)0.058 (3)0.0046 (18)0.004 (2)0.0080 (17)
C30.047 (2)0.0367 (18)0.042 (2)0.0112 (16)0.0090 (18)0.0092 (16)
C40.045 (2)0.0392 (19)0.046 (2)0.0183 (17)0.0044 (18)0.0081 (17)
C50.0309 (18)0.0373 (17)0.0244 (16)0.0037 (14)0.0061 (14)0.0018 (13)
C60.055 (3)0.049 (2)0.0304 (19)0.0116 (18)0.0093 (18)0.0045 (16)
C70.031 (2)0.054 (2)0.039 (2)0.0018 (17)0.0083 (16)0.0111 (17)
C80.042 (2)0.0387 (17)0.035 (2)0.0038 (16)0.0075 (17)0.0076 (15)
C90.0228 (16)0.0322 (16)0.0334 (18)0.0038 (13)0.0008 (13)0.0040 (14)
C100.0277 (19)0.0413 (19)0.065 (3)0.0013 (15)0.0022 (18)0.0065 (18)
C110.041 (2)0.061 (2)0.053 (3)0.0050 (19)0.015 (2)0.019 (2)
C120.0272 (17)0.0366 (17)0.0390 (19)0.0053 (14)0.0008 (15)0.0046 (15)
C130.0357 (19)0.0355 (17)0.0261 (17)0.0045 (15)0.0028 (14)0.0049 (14)
C140.045 (3)0.084 (3)0.039 (2)0.014 (2)0.0093 (19)0.002 (2)
C150.069 (3)0.048 (2)0.043 (2)0.005 (2)0.020 (2)0.0085 (18)
C160.082 (3)0.073 (3)0.041 (2)0.035 (3)0.009 (2)0.019 (2)
C170.052 (2)0.0342 (17)0.045 (2)0.0094 (17)0.0066 (18)0.0023 (16)
C180.062 (3)0.0332 (18)0.055 (2)0.0087 (18)0.015 (2)0.0036 (17)
C190.028 (2)0.061 (2)0.076 (3)0.0029 (18)0.012 (2)0.013 (2)
C200.038 (3)0.119 (5)0.153 (6)0.023 (3)0.030 (3)0.025 (4)
Geometric parameters (Å, º) top
Sb1—C172.152 (3)C10—H10A0.9800
Sb1—C192.158 (4)C10—H10B0.9800
Sb1—C132.197 (3)C10—H10C0.9800
Sb1—Ga12.9243 (5)C11—H11A0.9800
Ga1—C92.034 (3)C11—H11B0.9800
Ga1—C12.039 (3)C11—H11C0.9800
Ga1—C52.039 (3)C12—H12A0.9800
C1—C31.516 (5)C12—H12B0.9800
C1—C41.534 (5)C12—H12C0.9800
C1—C21.536 (5)C13—C161.513 (5)
C2—H2A0.9800C13—C141.515 (5)
C2—H2B0.9800C13—C151.517 (5)
C2—H2C0.9800C14—H14A0.9800
C3—H3A0.9800C14—H14B0.9800
C3—H3B0.9800C14—H14C0.9800
C3—H3C0.9800C15—H15A0.9800
C4—H4A0.9800C15—H15B0.9800
C4—H4B0.9800C15—H15C0.9800
C4—H4C0.9800C16—H16A0.9800
C5—C81.519 (4)C16—H16B0.9800
C5—C61.532 (4)C16—H16C0.9800
C5—C71.536 (5)C17—C181.516 (5)
C6—H6A0.9800C17—H17A0.9900
C6—H6B0.9800C17—H17B0.9900
C6—H6C0.9800C18—H18A0.9800
C7—H7A0.9800C18—H18B0.9800
C7—H7B0.9800C18—H18C0.9800
C7—H7C0.9800C19—C201.440 (6)
C8—H8A0.9800C19—H19A0.9900
C8—H8B0.9800C19—H19B0.9900
C8—H8C0.9800C20—H20A0.9800
C9—C111.527 (5)C20—H20B0.9800
C9—C121.530 (4)C20—H20C0.9800
C9—C101.534 (5)
C17—Sb1—C1998.05 (15)C9—C10—H10A109.5
C17—Sb1—C13100.69 (14)C9—C10—H10B109.5
C19—Sb1—C1398.53 (15)H10A—C10—H10B109.5
C17—Sb1—Ga1117.47 (11)C9—C10—H10C109.5
C19—Sb1—Ga1110.36 (12)H10A—C10—H10C109.5
C13—Sb1—Ga1126.75 (8)H10B—C10—H10C109.5
C9—Ga1—C1117.05 (13)C9—C11—H11A109.5
C9—Ga1—C5116.50 (13)C9—C11—H11B109.5
C1—Ga1—C5115.65 (13)H11A—C11—H11B109.5
C9—Ga1—Sb1102.65 (9)C9—C11—H11C109.5
C1—Ga1—Sb1100.97 (10)H11A—C11—H11C109.5
C5—Ga1—Sb199.58 (9)H11B—C11—H11C109.5
C3—C1—C4107.4 (3)C9—C12—H12A109.5
C3—C1—C2108.7 (3)C9—C12—H12B109.5
C4—C1—C2107.5 (3)H12A—C12—H12B109.5
C3—C1—Ga1113.4 (2)C9—C12—H12C109.5
C4—C1—Ga1113.0 (2)H12A—C12—H12C109.5
C2—C1—Ga1106.7 (2)H12B—C12—H12C109.5
C1—C2—H2A109.5C16—C13—C14109.3 (3)
C1—C2—H2B109.5C16—C13—C15110.5 (3)
H2A—C2—H2B109.5C14—C13—C15108.7 (3)
C1—C2—H2C109.5C16—C13—Sb1110.6 (2)
H2A—C2—H2C109.5C14—C13—Sb1109.0 (2)
H2B—C2—H2C109.5C15—C13—Sb1108.7 (2)
C1—C3—H3A109.5C13—C14—H14A109.5
C1—C3—H3B109.5C13—C14—H14B109.5
H3A—C3—H3B109.5H14A—C14—H14B109.5
C1—C3—H3C109.5C13—C14—H14C109.5
H3A—C3—H3C109.5H14A—C14—H14C109.5
H3B—C3—H3C109.5H14B—C14—H14C109.5
C1—C4—H4A109.5C13—C15—H15A109.5
C1—C4—H4B109.5C13—C15—H15B109.5
H4A—C4—H4B109.5H15A—C15—H15B109.5
C1—C4—H4C109.5C13—C15—H15C109.5
H4A—C4—H4C109.5H15A—C15—H15C109.5
H4B—C4—H4C109.5H15B—C15—H15C109.5
C8—C5—C6108.1 (3)C13—C16—H16A109.5
C8—C5—C7107.7 (3)C13—C16—H16B109.5
C6—C5—C7108.3 (3)H16A—C16—H16B109.5
C8—C5—Ga1112.7 (2)C13—C16—H16C109.5
C6—C5—Ga1107.1 (2)H16A—C16—H16C109.5
C7—C5—Ga1112.8 (2)H16B—C16—H16C109.5
C5—C6—H6A109.5C18—C17—Sb1115.6 (3)
C5—C6—H6B109.5C18—C17—H17A108.4
H6A—C6—H6B109.5Sb1—C17—H17A108.4
C5—C6—H6C109.5C18—C17—H17B108.4
H6A—C6—H6C109.5Sb1—C17—H17B108.4
H6B—C6—H6C109.5H17A—C17—H17B107.4
C5—C7—H7A109.5C17—C18—H18A109.5
C5—C7—H7B109.5C17—C18—H18B109.5
H7A—C7—H7B109.5H18A—C18—H18B109.5
C5—C7—H7C109.5C17—C18—H18C109.5
H7A—C7—H7C109.5H18A—C18—H18C109.5
H7B—C7—H7C109.5H18B—C18—H18C109.5
C5—C8—H8A109.5C20—C19—Sb1118.5 (3)
C5—C8—H8B109.5C20—C19—H19A107.7
H8A—C8—H8B109.5Sb1—C19—H19A107.7
C5—C8—H8C109.5C20—C19—H19B107.7
H8A—C8—H8C109.5Sb1—C19—H19B107.7
H8B—C8—H8C109.5H19A—C19—H19B107.1
C11—C9—C12107.4 (3)C19—C20—H20A109.5
C11—C9—C10108.5 (3)C19—C20—H20B109.5
C12—C9—C10107.4 (3)H20A—C20—H20B109.5
C11—C9—Ga1108.2 (2)C19—C20—H20C109.5
C12—C9—Ga1113.2 (2)H20A—C20—H20C109.5
C10—C9—Ga1112.0 (2)H20B—C20—H20C109.5
C17—Sb1—Ga1—C983.96 (15)Sb1—Ga1—C5—C743.5 (2)
C19—Sb1—Ga1—C9164.86 (15)C1—Ga1—C9—C1187.7 (3)
C13—Sb1—Ga1—C946.52 (14)C5—Ga1—C9—C1155.2 (3)
C17—Sb1—Ga1—C1154.82 (15)Sb1—Ga1—C9—C11162.8 (2)
C19—Sb1—Ga1—C143.65 (15)C1—Ga1—C9—C12153.4 (2)
C13—Sb1—Ga1—C174.69 (15)C5—Ga1—C9—C1263.7 (3)
C17—Sb1—Ga1—C536.15 (15)Sb1—Ga1—C9—C1243.9 (2)
C19—Sb1—Ga1—C575.02 (15)C1—Ga1—C9—C1031.8 (3)
C13—Sb1—Ga1—C5166.63 (14)C5—Ga1—C9—C10174.7 (2)
C9—Ga1—C1—C364.0 (3)Sb1—Ga1—C9—C1077.7 (2)
C5—Ga1—C1—C3152.7 (2)C17—Sb1—C13—C1641.6 (3)
Sb1—Ga1—C1—C346.4 (3)C19—Sb1—C13—C1658.3 (3)
C9—Ga1—C1—C4173.5 (2)Ga1—Sb1—C13—C16178.2 (2)
C5—Ga1—C1—C430.2 (3)C17—Sb1—C13—C1478.6 (3)
Sb1—Ga1—C1—C476.1 (2)C19—Sb1—C13—C14178.6 (3)
C9—Ga1—C1—C255.6 (3)Ga1—Sb1—C13—C1458.0 (3)
C5—Ga1—C1—C287.6 (3)C17—Sb1—C13—C15163.1 (3)
Sb1—Ga1—C1—C2166.1 (2)C19—Sb1—C13—C1563.2 (3)
C9—Ga1—C5—C830.7 (3)Ga1—Sb1—C13—C1560.3 (3)
C1—Ga1—C5—C8174.2 (2)C19—Sb1—C17—C18178.9 (3)
Sb1—Ga1—C5—C878.7 (2)C13—Sb1—C17—C1880.7 (3)
C9—Ga1—C5—C688.1 (2)Ga1—Sb1—C17—C1860.9 (3)
C1—Ga1—C5—C655.3 (3)C17—Sb1—C19—C207.2 (5)
Sb1—Ga1—C5—C6162.5 (2)C13—Sb1—C19—C20109.4 (5)
C9—Ga1—C5—C7152.9 (2)Ga1—Sb1—C19—C20116.1 (4)
C1—Ga1—C5—C763.7 (3)

Experimental details

Crystal data
Chemical formula[GaSb(C2H5)2(C4H9)4]
Mr478.04
Crystal system, space groupMonoclinic, P21/n
Temperature (K)120
a, b, c (Å)9.1138 (16), 23.698 (4), 11.027 (2)
β (°) 91.479 (4)
V3)2380.7 (7)
Z4
Radiation typeMo Kα
µ (mm1)2.27
Crystal size (mm)0.22 × 0.20 × 0.16
Data collection
DiffractometerBruker SMART APEX
Absorption correctionMulti-scan
(SADABS; Bruker, 2002)
Tmin, Tmax0.624, 0.699
No. of measured, independent and
observed [I > 2σ(I)] reflections
20988, 5684, 4418
Rint0.082
(sin θ/λ)max1)0.658
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.037, 0.074, 0.95
No. of reflections5684
No. of parameters199
H-atom treatmentH-atom parameters constrained
Δρmax, Δρmin (e Å3)0.95, 0.95

Computer programs: SMART (Bruker, 2002), SAINT (Bruker, 2002), SAINT, SHELXTL (Bruker, 2002), SHELXTL.

Selected geometric parameters (Å, º) top
Sb1—C172.152 (3)Ga1—C92.034 (3)
Sb1—C192.158 (4)Ga1—C12.039 (3)
Sb1—C132.197 (3)Ga1—C52.039 (3)
Sb1—Ga12.9243 (5)
C17—Sb1—C1998.05 (15)C13—Sb1—Ga1126.75 (8)
C17—Sb1—C13100.69 (14)C9—Ga1—C1117.05 (13)
C19—Sb1—C1398.53 (15)C9—Ga1—C5116.50 (13)
C17—Sb1—Ga1117.47 (11)C1—Ga1—C5115.65 (13)
C19—Sb1—Ga1110.36 (12)
 

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