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Hydrothermally grown crystals of α-K3NdSi6O15·2H2O, potassium neodymium silicate, have been studied by single-crystal X-ray methods. The compound crystallizes in space group Pbam, contains four formula units per unit cell and has lattice constants a = 16.008 (2), b = 15.004 (2) and c = 7.2794 (7) Å, giving a calculated density of 2.683 Mg m−3. Refinement was carried out with 2161 independent structure factors to a residual, R(F), of 0.0528 [wR(F2) = 0.1562] using anisotropic temperature factors for all atoms other than those associated with water molecules. The structure is based on highly corrugated (Si2O52−) layers which can be generated by the condensation of xonotlite-like ribbons, which can, in turn, be generated by the condensation of wollastonite-like chains. The silicate layers are connected by Nd octahedra to form a three-dimensional framework. Potassium ions and water molecules are located in interstitial sites within this framework, in particular, within channels that extend along [001]. Aging of as-grown crystals at room temperature for periods of six months or more results in an ordering phenomenon that causes the length of the c axis to double. In addition, two phase transitions were found to occur upon heating. The high-temperature transformations, investigated by differential scanning calorimetry, thermal gravimetric analysis and high-temperature X-ray diffraction, are reversible, suggesting displacive transformations in which the layers remain intact. Conductivity measurements along all three crystallographic axes showed the conductivity to be greatest along [001] and further suggest that the channels present in the room-temperature structure are preserved at high temperatures so as to serve as pathways for easy ion transport. Ion-exchange experiments revealed that silver can readily be incorporated into the structure.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S0108768199015785/bs0005sup1.cif
Contains datablocks global, 1

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S0108768199015785/bs0005sup2.hkl
Contains datablock hai8

Computing details top

Program(s) used to refine structure: SHELXL (Sheldrick, 1993).

Figures top
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(1) top
Crystal data top
H4K3NdSi6O17Z = 4
Mr = 706.1F(000) = 1348
Orthorhombic, PbamDx = 2.683 Mg m3
Hall symbol: -P 2 2abMo Kα radiation, λ = 0.71073 Å
a = 16.008 (2) ÅCell parameters from 20 reflections
b = 15.004 (2) ŵ = 4.18 mm1
c = 7.2794 (7) ÅT = 293 K
V = 1748.4 (3) Å30.5 × 0.4 × 0.2 mm
Data collection top
Siemens R3m-V
diffractometer
Rint = 0.020
Absorption correction: ψ scan (empirical (using intensity measurements))
?
θmax = 27.5°, θmin = 1.9°
Tmin = 0.061, Tmax = 0.102h = 020
2579 measured reflectionsk = 019
2173 independent reflectionsl = 99
1897 reflections with I 2σ
Refinement top
Refinement on F21 restraint
Least-squares matrix: Full-matrix least-squaresH atoms not located
R[F2 > 2σ(F2)] = 0.053w = 1/[σ2Fo2 + (0.0816P)2 + 30.48P]
where P = [max(Fo2,0) + 2Fc2]/3
wR(F2) = 0.156
S = 1.02Δρmax = 2.49 e Å3
2161 reflectionsΔρmin = 1.77 e Å3
144 parameters
Crystal data top
H4K3NdSi6O17V = 1748.4 (3) Å3
Mr = 706.1Z = 4
Orthorhombic, PbamMo Kα radiation
a = 16.008 (2) ŵ = 4.18 mm1
b = 15.004 (2) ÅT = 293 K
c = 7.2794 (7) Å0.5 × 0.4 × 0.2 mm
Data collection top
Siemens R3m-V
diffractometer
2173 independent reflections
Absorption correction: ψ scan (empirical (using intensity measurements))
?
1897 reflections with I 2σ
Tmin = 0.061, Tmax = 0.102Rint = 0.020
2579 measured reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0531 restraint
wR(F2) = 0.156H atoms not located
S = 1.02Δρmax = 2.49 e Å3
2161 reflectionsΔρmin = 1.77 e Å3
144 parameters
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzBiso*/Beq
Nd(1)000
Nd(2)0.500000
K(1)0.2910 (3)0.3785 (3)0
K(2)0.1556 (2)0.1555 (3)0.5000
K(3)0.0699 (2)0.4105 (2)0.5000
Si(1)0.21036 (14)0.1268 (2)0
Si(2)0.35548 (10)0.13505 (11)0.2862 (2)
Si(3)0.0912 (2)0.2806 (2)0
Si(4)0.46288 (11)0.29877 (11)0.2821 (3)
O(1)0.0429 (4)0.2459 (3)0.1828 (8)
O(2)0.1018 (5)0.3859 (5)0
O(3)0.1822 (4)0.2318 (4)0
O(4)0.1346 (4)0.0599 (4)0
O(5)0.2689 (3)0.1134 (3)0.1799 (7)
O(6)0.3264 (4)0.1335 (5)0.5000
O(7)0.4289 (3)0.0679 (3)0.2459 (8)
O(8)0.3803 (3)0.2390 (3)0.2397 (8)
O(9)0.4477 (3)0.3984 (3)0.2213 (8)
O(10)0.4846 (5)0.2876 (5)0.5000
Ow(1)10.3659 (10)0.4830 (10)0.5000
Ow(2)20.2281 (13)0.3284 (14)0.421 (3)
Ow(3)20.2113 (13)0.4189 (14)0.292 (3)

Experimental details

Crystal data
Chemical formulaH4K3NdSi6O17
Mr706.1
Crystal system, space groupOrthorhombic, Pbam
Temperature (K)293
a, b, c (Å)16.008 (2), 15.004 (2), 7.2794 (7)
V3)1748.4 (3)
Z4
Radiation typeMo Kα
µ (mm1)4.18
Crystal size (mm)0.5 × 0.4 × 0.2
Data collection
DiffractometerSiemens R3m-V
diffractometer
Absorption correctionψ scan (empirical (using intensity measurements))
Tmin, Tmax0.061, 0.102
No. of measured, independent and
observed (I 2σ) reflections
2579, 2173, 1897
Rint0.020
(sin θ/λ)max1)0.650
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.053, 0.156, 1.02
No. of reflections2161
No. of parameters144
No. of restraints1
H-atom treatmentH atoms not located
w = 1/[σ2Fo2 + (0.0816P)2 + 30.48P]
where P = [max(Fo2,0) + 2Fc2]/3
Δρmax, Δρmin (e Å3)2.49, 1.77

Computer programs: SHELXL (Sheldrick, 1993).

 

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