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The synthesis and crystal structures of two tris­(tri­alkyl­sil­yl)silyl bromide compounds, C9H27BrSi4 (I, HypSiBr) and C27H63BrSi4 (II, TipSiBr), are described. Compound I was prepared in 85% yield by free-radical bromination of 1,1,1,3,3,3-hexa­methyl-2-(tri­methyl­sil­yl)tris­ilane using bromo­butane and 2,2′-azobis(2-methyl­propio­nitrile) as a radical initiator at 333 K. The mol­ecule possesses threefold rotational symmetry, with the central Si atom and the Br atom being located on the threefold rotation axis. The Si—Br bond distance is 2.2990 (12) Å and the Si—Si bond lengths are 2.3477 (8) Å. The Br—Si—Si bond angles are 104.83 (3)° and the Si—Si—Si bond angles are 113.69 (2)°, reflecting the steric hindrance inherent in the three tri­methyl­silyl groups attached to the central Si atom. Compound II was prepared in 55% yield by free-radical bromination of 1,1,1,3,3,3-hexa­isopropyl-2-(triiso­propyl­sil­yl)tris­ilane using N-bromo­succinimide and 2,2′-azobis(2-methyl­propio­nitrile) as a radical initiator at 353 K. Here the Si—Br bond length is 2.3185 (7) Å and the Si—Si bond lengths range from 2.443 (1) to 2.4628 (9) Å. The Br—Si—Si bond angles range from 98.44 (3) to 103.77 (3)°, indicating steric hindrance between the three triiso­propyl­silyl groups.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S2056989018009696/su5451sup1.cif
Contains datablocks I, II, Global

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S2056989018009696/su5451Isup2.hkl
Contains datablock I

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S2056989018009696/su5451IIsup3.hkl
Contains datablock II

cml

Chemical Markup Language (CML) file https://doi.org/10.1107/S2056989018009696/su5451Isup4.cml
Supplementary material

cml

Chemical Markup Language (CML) file https://doi.org/10.1107/S2056989018009696/su5451IIsup5.cml
Supplementary material

CCDC references: 1854536; 1854535

Key indicators

  • Single-crystal X-ray study
  • T = 173 K
  • Mean [sigma](Si-C) = 0.003 Å
  • Mean [sigma](C-C) = 0.004 Å
  • R factor = 0.028
  • wR factor = 0.075
  • Data-to-parameter ratio = 25.5

checkCIF/PLATON results

No syntax errors found



Datablock: I


Alert level C PLAT242_ALERT_2_C Low 'MainMol' Ueq as Compared to Neighbors of Si2 Check PLAT250_ALERT_2_C Large U3/U1 Ratio for Average U(i,j) Tensor .... 2.1 Note PLAT601_ALERT_2_C Structure Contains Solvent Accessible VOIDS of . 57 Ang   3 PLAT978_ALERT_2_C Number C-C Bonds with Positive Residual Density. 0 Info
Alert level G PLAT909_ALERT_3_G Percentage of I>2sig(I) Data at Theta(Max) Still 66% Note PLAT996_ALERT_1_G Non-Standard SHELXL LIST 4 Style FCF Supplied .. ! Check
0 ALERT level A = Most likely a serious problem - resolve or explain 0 ALERT level B = A potentially serious problem, consider carefully 4 ALERT level C = Check. Ensure it is not caused by an omission or oversight 2 ALERT level G = General information/check it is not something unexpected 1 ALERT type 1 CIF construction/syntax error, inconsistent or missing data 4 ALERT type 2 Indicator that the structure model may be wrong or deficient 1 ALERT type 3 Indicator that the structure quality may be low 0 ALERT type 4 Improvement, methodology, query or suggestion 0 ALERT type 5 Informative message, check
Datablock: II
Alert level C PLAT911_ALERT_3_C Missing FCF Refl Between Thmin & STh/L= 0.600 19 Report PLAT978_ALERT_2_C Number C-C Bonds with Positive Residual Density. 0 Info
Alert level G PLAT154_ALERT_1_G The s.u.'s on the Cell Angles are Equal ..(Note) 0.004 Degree PLAT912_ALERT_4_G Missing # of FCF Reflections Above STh/L= 0.600 130 Note
0 ALERT level A = Most likely a serious problem - resolve or explain 0 ALERT level B = A potentially serious problem, consider carefully 2 ALERT level C = Check. Ensure it is not caused by an omission or oversight 2 ALERT level G = General information/check it is not something unexpected 1 ALERT type 1 CIF construction/syntax error, inconsistent or missing data 1 ALERT type 2 Indicator that the structure model may be wrong or deficient 1 ALERT type 3 Indicator that the structure quality may be low 1 ALERT type 4 Improvement, methodology, query or suggestion 0 ALERT type 5 Informative message, check
checkCIF publication errors
Alert level A PUBL024_ALERT_1_A The number of authors is greater than 5. Please specify the role of each of the co-authors for your paper.
1 ALERT level A = Data missing that is essential or data in wrong format 0 ALERT level G = General alerts. Data that may be required is missing

Computing details top

Data collection: APEX2 (Bruker, 2014) for (I); SMART (Bruker, 2014) for (II). For both structures, cell refinement: SAINT (Bruker, 2014); data reduction: SAINT (Bruker, 2014). Program(s) used to solve structure: SHELXS97 (Sheldrick, 2008) for (I); SHELXT2013 (Sheldrick, 2015a) for (II). Program(s) used to refine structure: SHELXL2017 (Sheldrick, 2015b) for (I); SHELXL2014 (Sheldrick, 2015b) for (II). Molecular graphics: OLEX2 (Dolomanov et al., 2009; Bourhis et al., 2015) for (I); SHELXTL (Sheldrick, 2008) for (II). Software used to prepare material for publication: CrystalMaker (Palmer, 2007) for (I); SHELXTL (Sheldrick, 2008) for (II).

2-Bromo-1,1,1,3,3,3-hexamethyl-2-(trimethylsilyl)trisilane (I) top
Crystal data top
C9H27BrSi4Mo Kα radiation, λ = 0.71073 Å
Mr = 327.57Cell parameters from 3863 reflections
Cubic, Pa3θ = 2.3–25.3°
a = 15.6497 (19) ŵ = 2.37 mm1
V = 3832.8 (14) Å3T = 173 K
Z = 8Block, colourless
F(000) = 13760.45 × 0.24 × 0.14 mm
Dx = 1.135 Mg m3
Data collection top
Bruker APEXII CCD
diffractometer
953 reflections with I > 2σ(I)
φ and ω scansRint = 0.046
Absorption correction: multi-scan
(SADABS; Bruker, 2014)
θmax = 25.3°, θmin = 2.3°
Tmin = 0.571, Tmax = 0.745h = 1816
11038 measured reflectionsk = 1817
1174 independent reflectionsl = 1518
Refinement top
Refinement on F2Primary atom site location: structure-invariant direct methods
Least-squares matrix: fullSecondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.028Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.075H-atom parameters constrained
S = 1.05 w = 1/[σ2(Fo2) + (0.0349P)2 + 1.4333P]
where P = (Fo2 + 2Fc2)/3
1174 reflections(Δ/σ)max = 0.002
46 parametersΔρmax = 0.31 e Å3
0 restraintsΔρmin = 0.16 e Å3
Special details top

Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
Br10.74011 (2)0.74011 (2)0.74011 (2)0.04337 (17)
Si10.65529 (4)0.65529 (4)0.65529 (4)0.0327 (3)
Si20.69238 (5)0.51472 (4)0.69229 (5)0.0473 (2)
C10.6249 (2)0.43945 (18)0.6286 (2)0.0734 (10)
H1A0.63310.45060.56750.110*
H1B0.56460.44780.64340.110*
H1C0.64150.38050.64140.110*
C20.8079 (2)0.49575 (19)0.6707 (3)0.0943 (14)
H2A0.82270.43700.68660.141*
H2B0.84220.53580.70440.141*
H2C0.81940.50440.60980.141*
C30.6752 (3)0.49746 (19)0.8090 (2)0.0953 (13)
H3A0.61420.50320.82220.143*
H3B0.70760.54010.84140.143*
H3C0.69460.44010.82470.143*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
Br10.04337 (17)0.04337 (17)0.04337 (17)0.00621 (10)0.00621 (10)0.00621 (10)
Si10.0327 (3)0.0327 (3)0.0327 (3)0.0008 (3)0.0008 (3)0.0008 (3)
Si20.0529 (5)0.0317 (4)0.0573 (5)0.0013 (3)0.0106 (4)0.0008 (3)
C10.087 (2)0.0426 (16)0.091 (2)0.0092 (16)0.0304 (19)0.0051 (16)
C20.056 (2)0.0494 (19)0.178 (4)0.0145 (16)0.007 (2)0.001 (2)
C30.168 (4)0.052 (2)0.066 (2)0.006 (2)0.019 (2)0.0183 (17)
Geometric parameters (Å, º) top
Br1—Si12.2990 (12)Si2—C11.870 (3)
Si1—Si2i2.3478 (8)Si2—C21.862 (3)
Si1—Si22.3477 (8)Si2—C31.866 (3)
Si1—Si2ii2.3478 (8)
Br1—Si1—Si2104.83 (3)C1—Si2—Si1108.61 (10)
Br1—Si1—Si2ii104.83 (3)C2—Si2—Si1110.16 (11)
Br1—Si1—Si2i104.83 (3)C2—Si2—C1110.55 (17)
Si2—Si1—Si2ii113.69 (2)C2—Si2—C3107.12 (19)
Si2—Si1—Si2i113.69 (3)C3—Si2—Si1109.96 (10)
Si2i—Si1—Si2ii113.69 (2)C3—Si2—C1110.45 (16)
Symmetry codes: (i) y, z, x; (ii) z, x, y.
2-Bromo-1,1,1,3,3,3-hexaisopropyl-2-(triisopropylsilyl)trisilane (II) top
Crystal data top
C27H63BrSi4Z = 2
Mr = 580.04F(000) = 632
Triclinic, P1Dx = 1.150 Mg m3
a = 8.4412 (4) ÅMo Kα radiation, λ = 0.71073 Å
b = 11.1336 (6) ÅCell parameters from 8192 reflections
c = 18.8477 (10) Åθ = 2.0–26.0°
α = 92.565 (4)°µ = 1.38 mm1
β = 90.527 (4)°T = 173 K
γ = 108.718 (4)°Needles, colourless
V = 1675.44 (15) Å30.38 × 0.10 × 0.02 mm
Data collection top
Bruker SMART APEX CCD area detector
diffractometer
6628 independent reflections
Radiation source: sealed tube4752 reflections with I > 2σ(I)
Detector resolution: 8 pixels mm-1Rint = 0.057
ω and φ scansθmax = 26.3°, θmin = 1.1°
Absorption correction: multi-scan
(SADABS; Bruker, 2014)
h = 1010
Tmin = 0.554, Tmax = 0.674k = 1313
21505 measured reflectionsl = 2323
Refinement top
Refinement on F2Primary atom site location: structure-invariant direct methods
Least-squares matrix: fullSecondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.037Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.075H-atom parameters constrained
S = 1.01 w = 1/[σ2(Fo2) + (0.0274P)2 + 0.3128P]
where P = (Fo2 + 2Fc2)/3
6628 reflections(Δ/σ)max = 0.001
307 parametersΔρmax = 0.36 e Å3
0 restraintsΔρmin = 0.28 e Å3
Special details top

Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes.

Refinement. All H atoms were positioned geometrically and refined using a riding model with C—H = 0.95–0.99 Å and wAith Uiso(H) = 1.2 (1.5 for methyl groups) times Ueq(C).

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
Br11.06221 (3)0.19737 (3)0.24790 (2)0.02768 (9)
Si10.77723 (8)0.16573 (6)0.25116 (3)0.01926 (16)
Si20.72101 (8)0.26469 (7)0.14487 (4)0.02137 (17)
Si30.67829 (9)0.06634 (7)0.24791 (4)0.02310 (17)
Si40.74993 (9)0.27556 (7)0.36447 (4)0.02177 (17)
C10.8269 (3)0.4443 (2)0.15761 (13)0.0249 (6)
H10.75490.47570.19050.030*
C21.0018 (3)0.4866 (3)0.19270 (15)0.0349 (7)
H2A1.07770.45750.16260.052*
H2B0.99620.44980.23930.052*
H2C1.04350.57940.19870.052*
C30.8371 (4)0.5176 (3)0.08928 (14)0.0335 (7)
H3A0.87530.60910.10150.050*
H3B0.72620.49310.06600.050*
H3C0.91620.49720.05700.050*
C40.7935 (3)0.1980 (3)0.06084 (12)0.0266 (6)
H40.74640.10340.06180.032*
C50.9832 (3)0.2301 (3)0.05683 (14)0.0371 (7)
H5A1.01010.18300.01610.056*
H5B1.02680.20650.10060.056*
H5C1.03450.32140.05130.056*
C60.7282 (4)0.2347 (3)0.00855 (13)0.0388 (7)
H6A0.78140.32570.01460.058*
H6B0.60670.21550.00660.058*
H6C0.75490.18620.04870.058*
C70.4836 (3)0.2270 (2)0.13810 (14)0.0287 (6)
H70.44390.21360.18790.034*
C80.4264 (4)0.3368 (3)0.11280 (17)0.0429 (8)
H8A0.45360.35000.06270.064*
H8B0.48410.41460.14140.064*
H8C0.30530.31550.11820.064*
C90.3878 (3)0.1029 (3)0.09537 (15)0.0394 (7)
H9A0.26920.07720.10730.059*
H9B0.43420.03600.10730.059*
H9C0.39910.11690.04440.059*
C100.6700 (3)0.1257 (3)0.15145 (13)0.0304 (6)
H100.61050.07690.12450.036*
C110.8446 (4)0.0949 (3)0.11986 (15)0.0402 (8)
H11A0.90380.14810.14060.060*
H11B0.90780.00520.13050.060*
H11C0.83370.11180.06830.060*
C120.5697 (4)0.2671 (3)0.13666 (15)0.0423 (8)
H12A0.57980.29100.08660.063*
H12B0.45170.28140.14700.063*
H12C0.61380.31890.16690.063*
C130.4641 (3)0.1251 (2)0.28895 (14)0.0278 (6)
H130.47410.07540.33520.033*
C140.3289 (4)0.0951 (3)0.24525 (16)0.0426 (8)
H14A0.31070.14400.19970.064*
H14B0.36510.00410.23670.064*
H14C0.22440.11780.27140.064*
C150.4016 (4)0.2660 (3)0.30713 (16)0.0402 (7)
H15A0.29670.28360.33270.060*
H15B0.48590.28420.33710.060*
H15C0.38270.31960.26320.060*
C160.8392 (3)0.1171 (2)0.29934 (14)0.0292 (6)
H160.95130.06080.28500.035*
C170.8383 (4)0.2537 (3)0.28398 (15)0.0383 (7)
H17A0.92290.27050.31430.057*
H17B0.86370.26490.23400.057*
H17C0.72770.31290.29380.057*
C180.8317 (4)0.0933 (3)0.38032 (15)0.0461 (8)
H18A0.72580.14940.39760.069*
H18B0.83920.00470.39090.069*
H18C0.92520.11090.40390.069*
C190.5967 (3)0.1584 (2)0.42272 (13)0.0290 (6)
H190.62170.07660.41660.035*
C200.4130 (4)0.1287 (3)0.40018 (18)0.0467 (8)
H20A0.34500.05220.42280.070*
H20B0.40120.11450.34840.070*
H20C0.37510.20030.41490.070*
C210.6171 (4)0.1952 (3)0.50277 (14)0.0486 (9)
H21A0.59290.27490.51180.073*
H21B0.73210.20640.51850.073*
H21C0.53920.12800.52900.073*
C220.9557 (3)0.3395 (2)0.41777 (13)0.0286 (6)
H220.92460.37560.46310.034*
C231.0335 (4)0.2414 (3)0.44175 (15)0.0397 (7)
H23A1.07030.20240.40020.059*
H23B0.95040.17570.46690.059*
H23C1.12990.28310.47360.059*
C241.0893 (3)0.4526 (3)0.38677 (14)0.0364 (7)
H24A1.18060.48870.42180.055*
H24B1.03900.51750.37500.055*
H24C1.13340.42360.34370.055*
C250.6831 (3)0.4212 (2)0.34999 (13)0.0258 (6)
H250.76950.47660.31920.031*
C260.6873 (4)0.5007 (3)0.41963 (14)0.0450 (8)
H26A0.65970.57720.40920.067*
H26B0.79940.52510.44170.067*
H26C0.60530.45020.45220.067*
C270.5152 (4)0.3988 (3)0.31189 (15)0.0392 (7)
H27A0.42430.35720.34340.059*
H27B0.50820.34450.26880.059*
H27C0.50500.48030.29900.059*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
Br10.02088 (14)0.03279 (18)0.02927 (15)0.00846 (11)0.00155 (11)0.00149 (12)
Si10.0195 (4)0.0190 (4)0.0191 (4)0.0060 (3)0.0012 (3)0.0007 (3)
Si20.0215 (4)0.0220 (4)0.0204 (4)0.0066 (3)0.0003 (3)0.0017 (3)
Si30.0256 (4)0.0192 (4)0.0247 (4)0.0076 (3)0.0019 (3)0.0009 (3)
Si40.0255 (4)0.0205 (4)0.0195 (4)0.0075 (3)0.0028 (3)0.0008 (3)
C10.0272 (14)0.0233 (15)0.0229 (14)0.0060 (12)0.0038 (11)0.0043 (11)
C20.0326 (16)0.0281 (17)0.0391 (17)0.0031 (13)0.0053 (13)0.0016 (13)
C30.0416 (18)0.0255 (16)0.0336 (16)0.0103 (13)0.0054 (13)0.0078 (13)
C40.0325 (15)0.0280 (16)0.0199 (13)0.0110 (12)0.0005 (11)0.0002 (11)
C50.0398 (18)0.049 (2)0.0266 (15)0.0205 (15)0.0080 (13)0.0018 (14)
C60.0447 (18)0.047 (2)0.0228 (15)0.0122 (15)0.0018 (13)0.0007 (14)
C70.0234 (15)0.0325 (17)0.0306 (15)0.0091 (12)0.0023 (12)0.0033 (13)
C80.0280 (16)0.044 (2)0.059 (2)0.0136 (14)0.0057 (15)0.0083 (16)
C90.0287 (16)0.0406 (19)0.0425 (18)0.0022 (14)0.0059 (13)0.0037 (14)
C100.0392 (17)0.0255 (16)0.0284 (15)0.0138 (13)0.0009 (13)0.0026 (12)
C110.053 (2)0.0409 (19)0.0339 (16)0.0245 (15)0.0101 (15)0.0006 (14)
C120.055 (2)0.0358 (19)0.0371 (17)0.0182 (16)0.0091 (15)0.0096 (14)
C130.0281 (15)0.0207 (15)0.0328 (15)0.0053 (12)0.0030 (12)0.0029 (12)
C140.0303 (17)0.044 (2)0.052 (2)0.0098 (14)0.0021 (14)0.0088 (15)
C150.0404 (18)0.0301 (17)0.0447 (18)0.0030 (14)0.0061 (14)0.0067 (14)
C160.0312 (15)0.0220 (16)0.0371 (16)0.0119 (12)0.0010 (12)0.0045 (12)
C170.0431 (18)0.0310 (18)0.0456 (18)0.0180 (14)0.0007 (15)0.0072 (14)
C180.062 (2)0.042 (2)0.0410 (18)0.0268 (17)0.0133 (16)0.0041 (15)
C190.0364 (16)0.0218 (16)0.0287 (15)0.0086 (12)0.0091 (12)0.0038 (12)
C200.0369 (18)0.0338 (19)0.069 (2)0.0089 (14)0.0210 (16)0.0101 (16)
C210.075 (2)0.036 (2)0.0324 (17)0.0132 (17)0.0229 (16)0.0069 (14)
C220.0327 (16)0.0310 (17)0.0212 (14)0.0097 (13)0.0035 (12)0.0036 (12)
C230.0491 (19)0.042 (2)0.0312 (16)0.0197 (15)0.0109 (14)0.0033 (14)
C240.0348 (17)0.0362 (18)0.0322 (16)0.0041 (14)0.0043 (13)0.0040 (13)
C250.0347 (16)0.0231 (15)0.0211 (13)0.0117 (12)0.0018 (12)0.0006 (11)
C260.077 (2)0.0380 (19)0.0302 (16)0.0336 (17)0.0023 (16)0.0064 (14)
C270.0388 (18)0.0384 (19)0.0464 (18)0.0213 (14)0.0010 (14)0.0007 (15)
Geometric parameters (Å, º) top
Br1—Si12.3185 (7)C12—H12B0.9800
Si1—Si22.4430 (10)C12—H12C0.9800
Si1—Si32.4448 (10)C13—C141.531 (4)
Si1—Si42.4628 (9)C13—C151.541 (4)
Si2—C41.908 (2)C13—H131.0000
Si2—C71.913 (3)C14—H14A0.9800
Si2—C11.914 (3)C14—H14B0.9800
Si3—C101.899 (3)C14—H14C0.9800
Si3—C131.899 (3)C15—H15A0.9800
Si3—C161.903 (3)C15—H15B0.9800
Si4—C221.909 (3)C15—H15C0.9800
Si4—C251.910 (3)C16—C171.533 (4)
Si4—C191.911 (3)C16—C181.543 (4)
C1—C21.532 (3)C16—H161.0000
C1—C31.543 (4)C17—H17A0.9800
C1—H11.0000C17—H17B0.9800
C2—H2A0.9800C17—H17C0.9800
C2—H2B0.9800C18—H18A0.9800
C2—H2C0.9800C18—H18B0.9800
C3—H3A0.9800C18—H18C0.9800
C3—H3B0.9800C19—C201.530 (4)
C3—H3C0.9800C19—C211.539 (4)
C4—C51.528 (4)C19—H191.0000
C4—C61.536 (4)C20—H20A0.9800
C4—H41.0000C20—H20B0.9800
C5—H5A0.9800C20—H20C0.9800
C5—H5B0.9800C21—H21A0.9800
C5—H5C0.9800C21—H21B0.9800
C6—H6A0.9800C21—H21C0.9800
C6—H6B0.9800C22—C231.525 (4)
C6—H6C0.9800C22—C241.538 (4)
C7—C91.543 (4)C22—H221.0000
C7—C81.544 (4)C23—H23A0.9800
C7—H71.0000C23—H23B0.9800
C8—H8A0.9800C23—H23C0.9800
C8—H8B0.9800C24—H24A0.9800
C8—H8C0.9800C24—H24B0.9800
C9—H9A0.9800C24—H24C0.9800
C9—H9B0.9800C25—C271.525 (4)
C9—H9C0.9800C25—C261.543 (3)
C10—C111.534 (4)C25—H251.0000
C10—C121.541 (4)C26—H26A0.9800
C10—H101.0000C26—H26B0.9800
C11—H11A0.9800C26—H26C0.9800
C11—H11B0.9800C27—H27A0.9800
C11—H11C0.9800C27—H27B0.9800
C12—H12A0.9800C27—H27C0.9800
Br1—Si1—Si2103.77 (3)C10—C12—H12C109.5
Br1—Si1—Si398.44 (3)H12A—C12—H12C109.5
Si2—Si1—Si3116.55 (3)H12B—C12—H12C109.5
Br1—Si1—Si4102.65 (3)C14—C13—C15109.5 (2)
Si2—Si1—Si4115.02 (4)C14—C13—Si3112.65 (19)
Si3—Si1—Si4116.59 (4)C15—C13—Si3116.31 (18)
C4—Si2—C7108.70 (11)C14—C13—H13105.9
C4—Si2—C1111.49 (12)C15—C13—H13105.9
C7—Si2—C1109.69 (11)Si3—C13—H13105.9
C4—Si2—Si1112.06 (9)C13—C14—H14A109.5
C7—Si2—Si1106.40 (9)C13—C14—H14B109.5
C1—Si2—Si1108.35 (8)H14A—C14—H14B109.5
C10—Si3—C13111.22 (12)C13—C14—H14C109.5
C10—Si3—C16109.44 (12)H14A—C14—H14C109.5
C13—Si3—C16111.50 (12)H14B—C14—H14C109.5
C10—Si3—Si1107.75 (9)C13—C15—H15A109.5
C13—Si3—Si1109.78 (8)C13—C15—H15B109.5
C16—Si3—Si1106.98 (9)H15A—C15—H15B109.5
C22—Si4—C25104.78 (12)C13—C15—H15C109.5
C22—Si4—C19106.42 (12)H15A—C15—H15C109.5
C25—Si4—C19111.59 (12)H15B—C15—H15C109.5
C22—Si4—Si1112.92 (8)C17—C16—C18108.9 (2)
C25—Si4—Si1111.74 (8)C17—C16—Si3116.29 (19)
C19—Si4—Si1109.24 (8)C18—C16—Si3112.56 (18)
C2—C1—C3107.7 (2)C17—C16—H16106.1
C2—C1—Si2115.52 (18)C18—C16—H16106.1
C3—C1—Si2114.54 (18)Si3—C16—H16106.1
C2—C1—H1106.1C16—C17—H17A109.5
C3—C1—H1106.1C16—C17—H17B109.5
Si2—C1—H1106.1H17A—C17—H17B109.5
C1—C2—H2A109.5C16—C17—H17C109.5
C1—C2—H2B109.5H17A—C17—H17C109.5
H2A—C2—H2B109.5H17B—C17—H17C109.5
C1—C2—H2C109.5C16—C18—H18A109.5
H2A—C2—H2C109.5C16—C18—H18B109.5
H2B—C2—H2C109.5H18A—C18—H18B109.5
C1—C3—H3A109.5C16—C18—H18C109.5
C1—C3—H3B109.5H18A—C18—H18C109.5
H3A—C3—H3B109.5H18B—C18—H18C109.5
C1—C3—H3C109.5C20—C19—C21109.0 (2)
H3A—C3—H3C109.5C20—C19—Si4113.92 (19)
H3B—C3—H3C109.5C21—C19—Si4114.62 (19)
C5—C4—C6108.5 (2)C20—C19—H19106.2
C5—C4—Si2114.13 (17)C21—C19—H19106.2
C6—C4—Si2114.24 (19)Si4—C19—H19106.2
C5—C4—H4106.5C19—C20—H20A109.5
C6—C4—H4106.5C19—C20—H20B109.5
Si2—C4—H4106.5H20A—C20—H20B109.5
C4—C5—H5A109.5C19—C20—H20C109.5
C4—C5—H5B109.5H20A—C20—H20C109.5
H5A—C5—H5B109.5H20B—C20—H20C109.5
C4—C5—H5C109.5C19—C21—H21A109.5
H5A—C5—H5C109.5C19—C21—H21B109.5
H5B—C5—H5C109.5H21A—C21—H21B109.5
C4—C6—H6A109.5C19—C21—H21C109.5
C4—C6—H6B109.5H21A—C21—H21C109.5
H6A—C6—H6B109.5H21B—C21—H21C109.5
C4—C6—H6C109.5C23—C22—C24110.6 (2)
H6A—C6—H6C109.5C23—C22—Si4116.47 (19)
H6B—C6—H6C109.5C24—C22—Si4115.61 (18)
C9—C7—C8109.7 (2)C23—C22—H22104.1
C9—C7—Si2115.43 (18)C24—C22—H22104.1
C8—C7—Si2114.49 (19)Si4—C22—H22104.1
C9—C7—H7105.4C22—C23—H23A109.5
C8—C7—H7105.4C22—C23—H23B109.5
Si2—C7—H7105.4H23A—C23—H23B109.5
C7—C8—H8A109.5C22—C23—H23C109.5
C7—C8—H8B109.5H23A—C23—H23C109.5
H8A—C8—H8B109.5H23B—C23—H23C109.5
C7—C8—H8C109.5C22—C24—H24A109.5
H8A—C8—H8C109.5C22—C24—H24B109.5
H8B—C8—H8C109.5H24A—C24—H24B109.5
C7—C9—H9A109.5C22—C24—H24C109.5
C7—C9—H9B109.5H24A—C24—H24C109.5
H9A—C9—H9B109.5H24B—C24—H24C109.5
C7—C9—H9C109.5C27—C25—C26108.5 (2)
H9A—C9—H9C109.5C27—C25—Si4117.05 (18)
H9B—C9—H9C109.5C26—C25—Si4112.35 (18)
C11—C10—C12110.3 (2)C27—C25—H25106.0
C11—C10—Si3112.34 (19)C26—C25—H25106.0
C12—C10—Si3115.08 (19)Si4—C25—H25106.0
C11—C10—H10106.1C25—C26—H26A109.5
C12—C10—H10106.1C25—C26—H26B109.5
Si3—C10—H10106.1H26A—C26—H26B109.5
C10—C11—H11A109.5C25—C26—H26C109.5
C10—C11—H11B109.5H26A—C26—H26C109.5
H11A—C11—H11B109.5H26B—C26—H26C109.5
C10—C11—H11C109.5C25—C27—H27A109.5
H11A—C11—H11C109.5C25—C27—H27B109.5
H11B—C11—H11C109.5H27A—C27—H27B109.5
C10—C12—H12A109.5C25—C27—H27C109.5
C10—C12—H12B109.5H27A—C27—H27C109.5
H12A—C12—H12B109.5H27B—C27—H27C109.5
C13—Si3—C10—C11172.26 (19)C10—Si3—C13—C1452.9 (2)
C16—Si3—C10—C1148.6 (2)C16—Si3—C13—C14175.32 (19)
Si1—Si3—C10—C1167.4 (2)Si1—Si3—C13—C1466.3 (2)
C13—Si3—C10—C1244.9 (2)C10—Si3—C13—C1574.7 (2)
C16—Si3—C10—C1278.8 (2)C16—Si3—C13—C1547.8 (2)
Si1—Si3—C10—C12165.25 (18)Si1—Si3—C13—C15166.17 (17)
Hydrogen-bond geometry (Å, º) top
D—H···AD—HH···AD···AD—H···A
C5—H5B···Br10.982.803.711 (3)155
C16—H16···Br11.002.843.584 (3)131
C23—H23A···Br10.982.873.685 (3)142
C24—H24C···Br10.982.933.726 (3)139
Selected bond lengths (Å), bond angles (°) and the fourfold coordination descriptor, τ4,a for compounds I (HypSiBr), II (TipSiBr), III (HypSiCl) and IV (TipSiH) top
CompoundI (HypSiBr)II (TipSiBr)III (HypSiCl)bIV (TipSiH)c
Si1—Xd2.2990 (12)2.3185 (7)2.1248 (9)1.608 (1)
Si1—Sine2.3477 (8)2.4430 (10), 2.4448 (10), 2.4628 (9)2.3406 (6)2.405 (1)
Si2—Si1—Sinf113.69 (2)115.02 (4), 116.55 (3), 116.59 (4)113.13 (2)117.9 (1)
Si2—Si1—Xd104.83 (3)98.44 (3) to 103.77 (3)105.51 (2)98.3 (1)
τ4 of Si10.940.900.950.88
Notes: (a) Yang et al. (2007); (b) Kuzora et al. (2009); (c) X-ray data (Gaspar et al., 1999); (d) X = Br for I and II, Cl for III, and H for IV; (e) n = 2 for I, III and IV, and 2, 3 and 4 for II; (f) n = 2i and 2ii for I, III and IV [symmetry codes: (i) = z, x, y; (ii) = y, z, x], and 2, 3 and 4 for II.
 

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