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The phase transition from the low- (β) to the high-temperature (α) form of acetonitrile, CH3CN, has been directly observed and studied on a unique single crystal. Both the β and α structures have been determined at temperatures close to the transition temperature (206 K and 201 K), taking advantage of the hysteresis. A single crystal of the β form was obtained for the first time.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S0108768102017603/os0098sup1.cif
Contains datablocks I, II

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S0108768102017603/os0098betasup2.hkl
Contains datablock shelxl

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S0108768102017603/os0098alphasup3.hkl
Contains datablock shelxl

CCDC references: 201620; 201621

Computing details top

For both compounds, data collection: CAD-4 EXPRESS (Enraf-Nonius, 1993); cell refinement: CAD-4 EXPRESS (Enraf-Nonius, 1993); data reduction: CADAK (Savariault,1991); program(s) used to solve structure: SHELXS96 (Sheldrick, 1990); program(s) used to refine structure: SHELXL96 (Sheldrick, 1996); molecular graphics: ORTEP III (Burnett & Johnson, 1996); software used to prepare material for publication: SHELXL96 (Sheldrick, 1996).

Figures top
[Figure 1]
[Figure 2]
[Figure 3]
[Figure 4]
[Figure 5]
[Figure 6]
[Figure 7]
[Figure 8]
(I) acetonitrile top
Crystal data top
C2H3NF(000) = 88
Mr = 41.05Dx = 1.058 Mg m3
Orthorhombic, Cmc21Mo Kα radiation, λ = 0.71073 Å
Hall symbol: C 2c -2Cell parameters from 25 reflections
a = 6.187 (1) Åθ = 5.7–20.1°
b = 5.282 (3) ŵ = 0.07 mm1
c = 7.887 (4) ÅT = 206 K
V = 257.7 (2) Å3Cylinder, colourless
Z = 41.2 × 0.5 × 0.3 × 0.15 (radius) mm
Data collection top
Nonius CAD4
diffractometer
99 reflections with I > 2σ(I)
Radiation source: fine-focus sealed tubeRint = 0.000
Graphite monochromatorθmax = 24.9°, θmin = 5.1°
ω–2θ scansh = 07
136 measured reflectionsk = 06
136 independent reflectionsl = 90
Refinement top
Refinement on F2Hydrogen site location: difference Fourier map
Least-squares matrix: fullAll H-atom parameters refined
R[F2 > 2σ(F2)] = 0.058 w = 1/[σ2(Fo2) + (0.0888P)2 + 0.1685P]
where P = (Fo2 + 2Fc2)/3
wR(F2) = 0.149(Δ/σ)max = 0.037
S = 1.20Δρmax = 0.18 e Å3
136 reflectionsΔρmin = 0.17 e Å3
26 parametersExtinction correction: SHELXL, Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
0 restraintsExtinction coefficient: 0.01 (7)
Primary atom site location: structure-invariant direct methodsAbsolute structure: Flack H D (1983), Acta Cryst. A39, 876-881
Secondary atom site location: difference Fourier mapAbsolute structure parameter: 10 (10)
Crystal data top
C2H3NV = 257.7 (2) Å3
Mr = 41.05Z = 4
Orthorhombic, Cmc21Mo Kα radiation
a = 6.187 (1) ŵ = 0.07 mm1
b = 5.282 (3) ÅT = 206 K
c = 7.887 (4) Å1.2 × 0.5 × 0.3 × 0.15 (radius) mm
Data collection top
Nonius CAD4
diffractometer
99 reflections with I > 2σ(I)
136 measured reflectionsRint = 0.000
136 independent reflections
Refinement top
R[F2 > 2σ(F2)] = 0.058All H-atom parameters refined
wR(F2) = 0.149Δρmax = 0.18 e Å3
S = 1.20Δρmin = 0.17 e Å3
136 reflectionsAbsolute structure: Flack H D (1983), Acta Cryst. A39, 876-881
26 parametersAbsolute structure parameter: 10 (10)
0 restraints
Special details top

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. Weighted R-factors wR and goodnesses of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold_expression of F2 > σ(F2) is used only for calculating R_factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
N0.00000.4380 (14)0.0974 (18)0.070 (3)
C10.00000.0776 (15)0.1243 (18)0.053 (2)
C20.00000.2762 (16)0.00000.053 (2)
H10.00000.104 (15)0.080 (12)0.07 (3)*
H20.149 (11)0.087 (9)0.201 (8)0.083 (19)*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
N0.070 (5)0.069 (6)0.070 (6)0.0000.0000.014 (4)
C10.058 (5)0.050 (4)0.052 (5)0.0000.0000.008 (5)
C20.035 (3)0.067 (4)0.058 (4)0.0000.0000.011 (5)
Geometric parameters (Å, º) top
N—C21.149 (12)C1—H11.02 (8)
C1—C21.436 (12)C1—H21.11 (7)
C2—C1—H1117 (6)H1—C1—H2103 (4)
C2—C1—H2110 (3)N—C2—C1178.9 (12)
(II) acetonitrile top
Crystal data top
C2H3NF(000) = 88
Mr = 41.05Dx = 1.028 Mg m3
Monoclinic, P21/cMo Kα radiation, λ = 0.71073 Å
Hall symbol: -P 2ybcCell parameters from 25 reflections
a = 4.102 (3) Åθ = 5.2–21.5°
b = 8.244 (7) ŵ = 0.07 mm1
c = 7.970 (7) ÅT = 201 K
β = 100.1 (1)°Cylinder, colourless
V = 265.3 (4) Å31.2 × 0.5 × 0.3 × 0.15 (radius) mm
Z = 4
Data collection top
Nonius CAD4
diffractometer
202 reflections with I > 2σ(I)
Radiation source: fine-focus sealed tubeRint = 0.057
Graphite monochromatorθmax = 21.9°, θmin = 3.6°
ω–2θ scansh = 04
376 measured reflectionsk = 08
324 independent reflectionsl = 88
Refinement top
Refinement on F2Secondary atom site location: difference Fourier map
Least-squares matrix: fullHydrogen site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.047All H-atom parameters refined
wR(F2) = 0.111 w = 1/[σ2(Fo2) + (0.036P)2 + 0.1879P]
where P = (Fo2 + 2Fc2)/3
S = 1.14(Δ/σ)max < 0.001
324 reflectionsΔρmax = 0.17 e Å3
41 parametersΔρmin = 0.17 e Å3
0 restraintsExtinction correction: SHELXL, Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
Primary atom site location: structure-invariant direct methodsExtinction coefficient: 0.07 (4)
Crystal data top
C2H3NV = 265.3 (4) Å3
Mr = 41.05Z = 4
Monoclinic, P21/cMo Kα radiation
a = 4.102 (3) ŵ = 0.07 mm1
b = 8.244 (7) ÅT = 201 K
c = 7.970 (7) Å1.2 × 0.5 × 0.3 × 0.15 (radius) mm
β = 100.1 (1)°
Data collection top
Nonius CAD4
diffractometer
202 reflections with I > 2σ(I)
376 measured reflectionsRint = 0.057
324 independent reflectionsθmax = 21.9°
Refinement top
R[F2 > 2σ(F2)] = 0.0470 restraints
wR(F2) = 0.111All H-atom parameters refined
S = 1.14Δρmax = 0.17 e Å3
324 reflectionsΔρmin = 0.17 e Å3
41 parameters
Special details top

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. Weighted R-factors wR and goodnesses of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold_expression of F2 > σ(F2) is used only for calculating R_factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
N0.4547 (9)0.2657 (5)0.4613 (4)0.0710 (15)
C10.0949 (12)0.4579 (6)0.2478 (6)0.0586 (14)
C20.2946 (9)0.3498 (5)0.3672 (5)0.0507 (13)
H10.108 (11)0.402 (5)0.166 (5)0.089 (14)*
H20.233 (11)0.518 (6)0.186 (6)0.113 (18)*
H30.050 (11)0.538 (6)0.301 (5)0.103 (16)*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
N0.076 (3)0.070 (3)0.064 (2)0.005 (2)0.0028 (18)0.008 (2)
C10.058 (3)0.060 (3)0.055 (3)0.005 (2)0.001 (2)0.008 (2)
C20.056 (2)0.050 (3)0.047 (2)0.007 (2)0.0101 (19)0.009 (2)
Geometric parameters (Å, º) top
N—C21.141 (5)C1—H20.96 (5)
C1—C21.448 (6)C1—H31.03 (5)
C1—H11.07 (5)
C2—C1—H1115 (2)H1—C1—H395 (3)
C2—C1—H2110 (3)H2—C1—H3108 (4)
H1—C1—H2112 (3)N—C2—C1179.3 (4)
C2—C1—H3115 (2)

Experimental details

(I)(II)
Crystal data
Chemical formulaC2H3NC2H3N
Mr41.0541.05
Crystal system, space groupOrthorhombic, Cmc21Monoclinic, P21/c
Temperature (K)206201
a, b, c (Å)6.187 (1), 5.282 (3), 7.887 (4)4.102 (3), 8.244 (7), 7.970 (7)
α, β, γ (°)90, 90, 9090, 100.1 (1), 90
V3)257.7 (2)265.3 (4)
Z44
Radiation typeMo KαMo Kα
µ (mm1)0.070.07
Crystal size (mm)1.2 × 0.5 × 0.3 × 0.15 (radius)1.2 × 0.5 × 0.3 × 0.15 (radius)
Data collection
DiffractometerNonius CAD4
diffractometer
Nonius CAD4
diffractometer
Absorption correction
No. of measured, independent and
observed [I > 2σ(I)] reflections
136, 136, 99 376, 324, 202
Rint0.0000.057
θmax (°)24.921.9
(sin θ/λ)max1)0.5930.525
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.058, 0.149, 1.20 0.047, 0.111, 1.14
No. of reflections136324
No. of parameters2641
H-atom treatmentAll H-atom parameters refinedAll H-atom parameters refined
Δρmax, Δρmin (e Å3)0.18, 0.170.17, 0.17
Absolute structureFlack H D (1983), Acta Cryst. A39, 876-881?
Absolute structure parameter10 (10)?

Computer programs: CAD-4 EXPRESS (Enraf-Nonius, 1993), CADAK (Savariault,1991), SHELXS96 (Sheldrick, 1990), SHELXL96 (Sheldrick, 1996), ORTEP III (Burnett & Johnson, 1996).

Selected geometric parameters (Å, º) for (I) top
N—C21.149 (12)C1—H11.02 (8)
C1—C21.436 (12)C1—H21.11 (7)
C2—C1—H1117 (6)H1—C1—H2103 (4)
C2—C1—H2110 (3)N—C2—C1178.9 (12)
Selected geometric parameters (Å, º) for (II) top
N—C21.141 (5)C1—H20.96 (5)
C1—C21.448 (6)C1—H31.03 (5)
C1—H11.07 (5)
C2—C1—H1115 (2)H1—C1—H395 (3)
C2—C1—H2110 (3)H2—C1—H3108 (4)
H1—C1—H2112 (3)N—C2—C1179.3 (4)
C2—C1—H3115 (2)
 

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