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Sub-micron a-ZnO epilayers (12 to 770 nm) grown on r-sapphire by MOCVD have been analysed using SEM, HRXRD, UPS, XPS and HRTEM. The distortion of the unit cell has been determined and the consequent strain shows a transition from an inelastic to an elastic state, separated by a critical thickness; a method to experimentally determine this critical thickness is given.
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