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J. Synchrotron Rad. (2024). 31, 1067-1070
https://doi.org/10.1107/S1600577524007318
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Comparing single-shot damage thresholds of boron carbide and silicon at the European XFEL

M. Tavakkoly, J. Chalupsky, V. Hajkova, W. Hillert, S. Jelinek, L. Juha, M. Makita, T. Mazza, M. Meyer, J. Montano, H. Sinn, V. Vozda and M. Vannoni
The damage threshold fluences of silicon (Si) and boron carbide (B4C)-coated Si at 1 keV and 9 mrad grazing incident angle are compared. Results show that B4C has a damage threshold approximately twice that of Si, highlighting the advantages of using B4C coatings for enhanced durability.
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