Angle-resolved UV photoemission spectroscopy has been used to investigate the interaction of CO with Gd films, grown on W(110). The results suggest the CO absorbs dissociatively, initially forming Gd₂O₃, with subsequent catalytic oxidation of CO to form carbonate.

Given the tunability of synchrotron radiation, photoemission spectroscopy can be used to monitor the growth modes of thin films in UHV. Cross-section effects such as Cooper minima and resonant photoemission can be exploited to maximize the adsorbate signal and minimize that from the substrate. Under favourable circumstances growth can be monitored in real time at coverages of <1%. As an example the growth of Gd on W(110) is investigated.

W 4f core-level spectra of Gd films on W(110) show components which can be identified as being due to bulk and interface W. The results suggest that the W/Gd interface is abrupt, i.e. no interface alloying occurs. At submonolayer coverages a further component is seen which is attributable to intermediate (n × 2) phases.