Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

The crystalline structure of single free-standing GaAs nanowires, grown by molecular beam epitaxy on a GaAs substrate at specific positions defined by focused ion beams, and the substrate regions close to the Au-implanted regions are investigated through grazing-incidence X-ray diffraction.

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

An investigation of the influence of Si supply on the molecular beam epitaxy growth process and morphology of InAs nanowires grown on GaAs[111]B substrates is presented.