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A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) allowed the influence of structural transformations in the damaged layer of Zn-doped Si(001) substrates after a multistage thermal treatment to be revealed. The shape of the Zn SIMS profiles correlates with the crystal structure of the layer and depends on the presence of factors influencing the mobility of Zn atoms.
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