Journal of Applied Crystallography
Journal of Applied
Crystallography
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X-ray diffraction and imaging
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J. Appl. Cryst.
(2013).
46
,
893-897
https://doi.org/10.1107/S0021889813010522
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Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B
A. Davydok
,
T. Rieger
,
A. Biermanns
,
M. Saqib
,
T. Grap
,
M. I. Lepsa
and
U. Pietsch
An investigation of the influence of Si supply on the molecular beam epitaxy growth process and morphology of InAs nanowires grown on GaAs[111]B substrates is presented.
Keywords:
semiconductor nanowires
;
molecular beam epitaxy (MBE) growth
;
X-ray diffraction
.
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