X-ray diffraction and imaging
This article reports the characterization of thin SiGe/Si(100) epilayers using reciprocal space maps measured by a laboratory X-ray instrument and a high-resolution X-ray diffraction study of partially relaxed SiGe/Si thin films.
X-ray diffraction and imaging
A general theoretical approach to the description of epitaxial layers with essentially different cell parameters and in-plane relaxation anisotropy is presented.