Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers

M. V. Baidakova, N. A. Bert, V. V. Chaldyshev, V. N. Nevedomsky, M. A. Yagovkina, V. V. Preobrazhenskii, M. A. Putyato and B. R. Semyagin

Structural transformations in superlattices of Sb and P δ-layers upon annealing were studied in low-temperature grown GaAs. The combination of Sb and P δ-layers appears to be an effective tool for spatial patterning of arsenic nanoinclusions and prevention of the defect formation in the GaAs matrix.

Keywords: structural transformation; low-temperature grown GaAs; X-ray diffraction and reflectivity.

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