Accurate determination of surface orientation of single-crystal wafers using high-resolution X-ray rocking curve measurements

Theoretical models are developed for the variation of the rocking curve peak positions of a single-crystal wafer as a function of the azimuthal angle. Using these models, a measurement method for the surface orientation of a wafer with a small surface miscut of <∼3° is proposed and the orientation is measured for a sapphire wafer.