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J. Appl. Cryst. (2012). 45, 496-502
https://doi.org/10.1107/S0021889812008953
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Strain analysis in Si micro-electromechanical systems by dynamical X-ray diffraction

T. Saka
Long-range strain can be detected by rotating a specimen along the scattering vector. This method is applied to Si devices.
Keywords: dynamical diffraction; silicon; strain; topography.
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