Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors

Scattering amplitudes taking into account the redistribution of charge due to bonds and corresponding correction factors considering the effect of static atomic displacements were computed using density functional theory and the empirical Keating model for ternary III-V and II-VI semiconductors in different strain states. Polynomials were fitted to the scattering amplitudes and the correction factors as a function of the composition of the ternary semiconductors.