Depth profiling of Fe-implanted Si(100) by means of X-ray reflectivity and extremely asymmetric X-ray diffraction

Depth profile investigation of Fe-implanted Si(100) has been carried out using extremely asymmetric X-ray diffraction. Owing to its higher surface sensitivity compared to X-ray reflectivity, a decrease of the mass density close to the surface was found for increasing ion fluence, which is explained by the formation of ion-induced near-surface defects.

Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

The crystalline structure of single free-standing GaAs nanowires, grown by molecular beam epitaxy on a GaAs substrate at specific positions defined by focused ion beams, and the substrate regions close to the Au-implanted regions are investigated through grazing-incidence X-ray diffraction.

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

An investigation of the influence of Si supply on the molecular beam epitaxy growth process and morphology of InAs nanowires grown on GaAs[111]B substrates is presented.