Depth profiling of Fe-implanted Si(100) by means of X-ray reflectivity and extremely asymmetric X-ray diffraction

Depth profile investigation of Fe-implanted Si(100) has been carried out using extremely asymmetric X-ray diffraction. Owing to its higher surface sensitivity compared to X-ray reflectivity, a decrease of the mass density close to the surface was found for increasing ion fluence, which is explained by the formation of ion-induced near-surface defects.

Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix

A self-assembly process is demonstrated that results in the formation of an anisotropic lattice of regularly ordered Ge quantum dots in an amorphous alumina matrix. The prepared material shows a strong anisotropy of the electrical transport properties.