Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon

J. Zhang, I. Pintilie, E. Fretwurst, R. Klanner, H. Perrey and J. Schwandt

MOS structures fabricated on high-resistivity n-type silicon are irradiated by 12 keV X-rays to doses between 10 kGy and 1 GGy, and the radiation-induced oxide charges and interface traps are characterized and their densities determined.

Keywords: XFEL; radiation damage; fixed oxide charge density; interface trap density; TDRC; C/G-V.

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