Journal of Synchrotron Radiation
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J. Synchrotron Rad.
(1999).
6
,
552-554
https://doi.org/10.1107/S0909049598016276
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On the effect of ion implantation in the microstructure of GaN: an XAFS study
M. Katsikini
,
J. Bollmann
,
W. T. Masselink
and
E. C. Paloura
Keywords:
materials science
;
soft X-ray absorption
;
EXAFS
;
GaN
;
implantation
;
defects
.
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J. Synchrotron Rad.
(1999).
6
,
555-557
https://doi.org/10.1107/S0909049598014423
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Nitrogen
K
-edge EXAFS measurements on Mg- and Si-doped GaN
M. Katsikini
,
T. D. Moustakas
and
E. C. Paloura
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J. Synchrotron Rad.
(1999).
6
,
558-560
https://doi.org/10.1107/S0909049598014435
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Nitrogen
K
-edge NEXAFS measurements on group-III binary and ternary nitrides
M. Katsikini
,
M. Fieber-Erdmann
,
E. Holub-Krappe
,
D. Korakakis
,
T. D. Moustakas
and
E. C. Paloura
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J. Synchrotron Rad.
(1999).
6
,
561-563
https://doi.org/10.1107/S090904959900151X
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Gallium
K
-edge EXAFS measurements on cubic and hexagonal GaN
M. Katsikini
,
H. Rossner
,
M. Fieber-Erdmann
,
E. Holub-Krappe
,
T. D. Moustakas
and
E. C. Paloura
Keywords:
materials science
;
GaN
;
EXAFS
.
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