Characterization of implanted semiconductors by means of white-beam and plane-wave synchrotron topography

K. Wieteska, W. Wierzchowski, W. Graeff, A. Turos and R. Grötzschel

Ion-implantation-induced strain profiles were determined both for A^IIIB^V compounds implanted with heavy ions and for silicon implanted with light ions. Based on these profiles, a number of diffraction phenomena were explained.

Keywords: ion implantation; A^IIIB^V semiconductors; silicon; X-ray diffraction studies; strain profiles.

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