Relationship between the locations of activated dislocations and the cooling flux direction in monocrystalline-like silicon grown in the [001] and [111] directions

By observing the distribution of dislocations in single-crystal silicon grown with different cooling flux directions, it is possible to obtain the relationship between cooling flux direction and activation characteristics of slip systems. This can provide theoretical support for reducing dislocations in the part of the crystal where dislocations can cause the most damage, by intentionally controlling the flux direction during the crystal growth process.