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The morphology, structure and luminescence properties of one-dimensional vertically aligned Sb-doped ZnO nanowires on a silicon substrate have been studied. The results show that the use of Si(111) is a critical factor for the growth of vertically aligned nanowires.

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Highly stoichiometric AgInSe2 thin films have been prepared on a p-type Si(111) substrate by a sol-gel spin-coating technique for the first time, for promising photovoltaic applications.
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