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A self-assembly process is demonstrated that results in the formation of an anisotropic lattice of regularly ordered Ge quantum dots in an amorphous alumina matrix. The prepared material shows a strong anisotropy of the electrical transport properties.

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A strong influence of matrix type on self-assembled growth of three-dimensional Ge quantum dot lattices in amorphous oxide matrices is demonstrated. An interplay between quantum-dot-related surface features and smoothing tendency of the matrix determines the type and quality of Ge quantum dot ordering.

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Periodic Co/SiO2 multilayers deposited by magnetron sputtering were investigated by grazing-incidence small-angle X-ray scattering, X-ray diffraction and the time-of-flight elastic recoil detection analysis method. During the deposition, Co nanoparticles are created and order spontaneously, forming a three-dimensional periodic array.
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