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Acta Cryst. (2014). A70, C1132
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A challenge in X-ray topo-tomography is the issue of quantitatively determining the 3D-deformation-distribution field associated with single defects of crystal lattices. In the present report an endeavor is made to retrieve a 3D-deformation-distribution field around single line defects (dislocations) in crystals by using the X-ray topo-tomography method. The general layout of the X-ray topo-tomography experiment is depicted in Fig. 1[1]. For our purposes we have used plane-parallel samples of crystal Si with surface orientation (111), the sample thickness being 1 mm, in which the linear dislocations have been inserted according to [2]. The experiments were carried out at the X-ray wavelength of MoKα1 (λ=0.071 nm). Experimental series of the X-ray (2 20)-reflection topography images with the rotation angle step 20 around the diffraction vector, the total angular range 3600, have been got out. Furthermore, such the 2D- topographic images are used for getting 3D-images by means of the modified algebraic method SART developed in [3]. In parallel, for 3D reconstruction the corresponding 2D-topographic dislocation images are simulated by use of the Born-approximation analytical and numerical solutions based on Takagi-Taupin equations describing the two-beam X-ray diffraction by the deformed crystals. Certainly, all the above approaches are applied to the comparative analysis of opportunities of determining 3D-deformation-distribution field around the dislocations under consideration.
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