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Lateral deformations caused by argon ions with energy 180 keV implanted in silicon are investigated by the X-ray interferometric method. By means of interferometric topograms, relative deformations and integral stresses are determined depending on radiation dose. Maximum local stresses are assessed to be σx(max) = 8.4 × 107 N m−2 and σy(max) = 6.7 × 107 N m−2.
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