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Two different methods of diffraction profile analysis are presented. In the first, the breadths and the first few Fourier coefficients of diffraction profiles are analysed by modified Williamson-Hall and Warren-Averbach procedures. A simple and pragmatic method is suggested to determine the crystallite size distribution in the presence of strain. In the second, the Fourier coefficients of the measured physical profiles are fitted by Fourier coefficients of well established ab initio functions of size and strain profiles. In both procedures, strain anisotropy is rationalized by the dislocation model of the mean square strain. The procedures are applied and tested on a nanocrystalline powder of silicon nitride and a severely plastically deformed bulk copper specimen. The X-ray crystallite size distributions are compared with size distributions obtained from transmission electron microscopy (TEM) micrographs. There is good agreement between X-ray and TEM data for nanocrystalline loose powders. In bulk materials, a deeper insight into the microstructure is needed to correlate the X-ray and TEM results.

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