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Based on the statistical theory of X-ray dynamical diffraction for thin films, the mosaicity of three types of semiconductor epitaxic layers has been investigated by analyzing their rocking curves by the X-ray double-crystal diffraction method. It is shown that the statistical theory can provide quantitative information on the mosaicity of the epitaxic layers such as the mean size and the mean disorientation of mosaic blocks in the layers. Some misunderstandings in interpreting experimental data are cleared up by taking into account the effect of diffuse scattering. It is emphasized that attempts to obtain structural parameters of specimens from their rocking curves by means of the Takagi-Taupin equations for coherent fields only are not strictly correct since diffuse scattering causes additional changes in the tails of the rocking curves.
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