Theory and characteristics of transition radiation emitted by low-energy storage-ring synchrotrons for use in X-ray lithography

Existing theory is developed further for description of transition radiation (TR) emitted by low-energy storage-ring synchrotrons. It takes into account the fact that the dielectric constant of the TR target material is a complex function, introduces an expression for the number of passes of an injected electron through the target, and accounts more precisely for the absorption of TR. It is shown that the consideration of the complexity of the dielectric constant results in notable changes of the TR spectrum for emitted photons with energies close to the ionization energies of the target material. Since such TR is used mostly for performing X-ray lithography (XRL), the sensitivity of the photoresist used in XRL is formulated. Maximization of this resist sensitivity can be used for designing optimum targets for XRL. Study of the transmission of TR through a commonly used XRL mask, and its partial absorption in a common photoresist, illustrates that TR emission with E = [490, 1860] eV is most useful for performing such XRL, while E ≅ 1 keV is best. It is shown that, for a particular target material, a target consisting of only one foil emits the most TR energy. Optimization of an Al target, based on maximization of the resist sensitivity, indicates that a target containing one Al foil with a thickness of about 200 nm would be best for performing XRL by our low-energy storage-ring synchrotron MIRRORCLE-20SX.