Implementation of statistical dynamic diffraction theory for defective semiconductor heterostructure modelling

Statistical dynamic diffraction theory (SDDT) provides the ability to model defect-induced structures in high-resolution X-ray diffraction analyses by incorporating both coherent (dynamic) and incoherent (kinematic) scattering. Current treatments of SDDT are mathematically intensive and may not provide sufficient detail regarding the implementation of the theory in practice. This paper discusses the implementation of SDDT and the modifications that allow for successful SDDT analyses of fully relaxed SiGe on Si.