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In the title compound, 2,6-di­phenyl­thia­cyclo­hexan-4-one, C17H16OS, mirror site symmetry is retained by the mol­ecule in the solid state in the absence of C-H...X hydrogen bonds. The crystal structure is stabilized by van der Waals interactions, the shortest S...O and C...O contacts being 3.567 (2) and 3.512 (3) Å, respectively.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S0108270100004765/vj1103sup1.cif
Contains datablocks dptp, I

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S0108270100004765/vj1103Isup2.hkl
Contains datablock I

CCDC reference: 147661

Comment top

The tendency of molecules to pack as closely as possible, usually, overrides that for retention of molecular symmetry upon crystallization and reduces the symmetry of a molecule in the solid state compared to that observed in the free state (Kitaigorodskii, 1973). Though inversion generally is the symmetry element which is carried over into the crystal, the tendency of molecules to possess mirror or twofold symmetry in the solid state seems to depend on the presence, nature and strength of the intermolecular interactions. An example of this is the crystal structure of 2,6-dibenzoyl-1,4-benzoquinone (Biradha et al., 1997), where interference from numerous C—H···O hydrogen bonds lowers the symmetry of the molecule.

In the present structure, (I), the molecule is bisected by a mirror plane passing through the atoms S1, C4 and O1 of the heterocyclic ring (Fig. 1). There are no C—H···X type interactions whose presence otherwise might have had a considerable influence on the molecular conformation. The absence of C—H···O hydrogen bonds is presumably due to the deficiency of acceptors compared to the donors (phenyl C—H). The crystal structure is stabilized by van der Waals interactions. The shortest S···O and C···O contacts observed are 3.567 (2) Å and 3.512 (3) Å, respectively. The strucutre provides a good example of the retention of mirror symmetry of a molecule in the crystals. \sch

Experimental top

The crystals were grown by slow evaporation of a saturated ethanol solution.

Computing details top

Data collection: CAD-4 Software (Enraf-Nonius, 1989); cell refinement: CAD-4 Software; data reduction: CAD-4 Software; program(s) used to solve structure: SHELXS97 (Sheldrick, 1990); program(s) used to refine structure: SHELXL97 (Sheldrick, 1997); molecular graphics: PLUTO (Motherwell & Clegg, 1978); software used to prepare material for publication: SHELXL97.

Figures top
[Figure 1] Fig. 1. The molecular structure of (I) with the atom-numbering scheme and 50% probability displacement ellipsoids.
2,6-diphenyl-thiopyran-4-one top
Crystal data top
C17H16OSF(000) = 568
Mr = 268.36Dx = 1.245 Mg m3
Orthorhombic, PnmaCu Kα radiation, λ = 1.54180 Å
Hall symbol: -P 2ac 2nCell parameters from 25 reflections
a = 10.867 (3) Åθ = 8–16°
b = 24.284 (4) ŵ = 1.90 mm1
c = 5.427 (2) ÅT = 293 K
V = 1432.2 (7) Å3Plates, colourless
Z = 40.20 × 0.12 × 0.08 mm
Data collection top
Enraf-Nonius CAD-4
diffractometer
Rint = 0.007
Radiation source: fine-focus sealed tubeθmax = 71.9°, θmin = 3.6°
Graphite monochromatorh = 013
ω–2θ scansk = 2911
1585 measured reflectionsl = 60
1436 independent reflections2 standard reflections every 200 reflections
1285 reflections with I > 2σ(I) intensity decay: 1%
Refinement top
Refinement on F2Secondary atom site location: difference Fourier map
Least-squares matrix: fullHydrogen site location: inferred from neighbouring sites
R[F2 > 2σ(F2)] = 0.043Only H-atom displacement parameters refined
wR(F2) = 0.123 w = 1/[σ2(Fo2) + (0.0432P)2 + 0.1515P]
where P = (Fo2 + 2Fc2)/3
S = 1.17(Δ/σ)max < 0.001
1436 reflectionsΔρmax = 0.35 e Å3
124 parametersΔρmin = 0.18 e Å3
0 restraintsExtinction correction: SHELXL97 (Sheldrick, 1997), Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
Primary atom site location: structure-invariant direct methodsExtinction coefficient: 0.0126 (9)
Crystal data top
C17H16OSV = 1432.2 (7) Å3
Mr = 268.36Z = 4
Orthorhombic, PnmaCu Kα radiation
a = 10.867 (3) ŵ = 1.90 mm1
b = 24.284 (4) ÅT = 293 K
c = 5.427 (2) Å0.20 × 0.12 × 0.08 mm
Data collection top
Enraf-Nonius CAD-4
diffractometer
Rint = 0.007
1585 measured reflections2 standard reflections every 200 reflections
1436 independent reflections intensity decay: 1%
1285 reflections with I > 2σ(I)
Refinement top
R[F2 > 2σ(F2)] = 0.0430 restraints
wR(F2) = 0.123Only H-atom displacement parameters refined
S = 1.17Δρmax = 0.35 e Å3
1436 reflectionsΔρmin = 0.18 e Å3
124 parameters
Special details top

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
S10.28672 (5)0.25000.77840 (10)0.0600 (2)
O10.0090 (2)0.25000.2052 (3)0.0999 (7)
C20.23937 (14)0.19352 (7)0.5821 (3)0.0639 (4)
C30.10133 (15)0.19750 (8)0.5219 (4)0.0730 (5)
C40.0661 (2)0.25000.3963 (4)0.0739 (7)
C70.27358 (16)0.14107 (8)0.7105 (3)0.0677 (5)
C80.2127 (2)0.12431 (10)0.9227 (4)0.0870 (6)
C90.2452 (3)0.07676 (11)1.0424 (6)0.1048 (8)
C100.3391 (3)0.04492 (11)0.9537 (6)0.1127 (10)
C110.4009 (3)0.06105 (12)0.7482 (7)0.1186 (10)
C120.3688 (2)0.10896 (9)0.6252 (5)0.0898 (6)
H3A0.0779 (18)0.1652 (8)0.424 (4)0.084 (6)*
H20.2857 (18)0.1970 (8)0.430 (4)0.076 (6)*
H3B0.053 (2)0.1970 (8)0.684 (4)0.084 (6)*
H90.201 (3)0.0632 (12)1.195 (6)0.131 (11)*
H100.359 (3)0.0125 (13)1.032 (5)0.137 (10)*
H120.467 (3)0.0420 (11)0.689 (5)0.116 (9)*
H110.407 (2)0.1207 (9)0.476 (4)0.099 (7)*
H80.145 (3)0.1461 (10)0.983 (5)0.122 (9)*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
S10.0458 (3)0.0720 (4)0.0623 (4)0.0000.0069 (2)0.000
O10.0717 (12)0.161 (2)0.0673 (11)0.0000.0206 (9)0.000
C20.0486 (8)0.0856 (11)0.0576 (9)0.0016 (7)0.0015 (6)0.0090 (8)
C30.0505 (9)0.0963 (13)0.0721 (10)0.0067 (8)0.0072 (8)0.0109 (9)
C40.0414 (10)0.120 (2)0.0598 (13)0.0000.0025 (9)0.000
C70.0575 (9)0.0746 (10)0.0709 (10)0.0046 (7)0.0077 (7)0.0155 (8)
C80.0904 (14)0.0918 (14)0.0786 (13)0.0003 (11)0.0023 (10)0.0003 (11)
C90.1215 (19)0.0927 (15)0.1002 (18)0.0073 (15)0.0128 (16)0.0088 (13)
C100.136 (2)0.0730 (13)0.129 (2)0.0033 (14)0.034 (2)0.0031 (14)
C110.114 (2)0.0905 (16)0.152 (3)0.0285 (16)0.0062 (18)0.0200 (17)
C120.0759 (12)0.0894 (13)0.1042 (16)0.0069 (10)0.0018 (12)0.0162 (12)
Geometric parameters (Å, º) top
S1—C21.8114 (17)C7—C81.389 (3)
S1—C2i1.8114 (17)C8—C91.371 (3)
O1—C41.209 (3)C8—H80.96 (3)
C2—C71.499 (2)C9—C101.367 (4)
C2—C31.538 (2)C9—H91.01 (3)
C2—H20.97 (2)C10—C111.359 (5)
C3—C41.496 (2)C10—H100.92 (3)
C3—H3A0.98 (2)C11—C121.386 (4)
C3—H3B1.02 (2)C11—H120.91 (3)
C4—C3i1.495 (2)C12—H110.95 (2)
C7—C121.376 (3)
C2—S1—C2i98.43 (12)C12—C7—C2120.78 (19)
C7—C2—C3113.20 (15)C8—C7—C2121.09 (18)
C7—C2—S1107.42 (11)C9—C8—C7121.1 (3)
C3—C2—S1110.74 (12)C9—C8—H8119.9 (15)
C7—C2—H2109.9 (11)C7—C8—H8119.0 (15)
C3—C2—H2108.7 (11)C10—C9—C8120.1 (3)
S1—C2—H2106.6 (11)C10—C9—H9117.2 (18)
C4—C3—C2113.57 (16)C8—C9—H9122.6 (18)
C4—C3—H3A111.6 (11)C11—C10—C9119.6 (3)
C2—C3—H3A108.5 (12)C11—C10—H10120.5 (18)
C4—C3—H3B105.7 (11)C9—C10—H10119.9 (19)
C2—C3—H3B108.4 (12)C10—C11—C12120.9 (3)
H3A—C3—H3B108.9 (15)C10—C11—H12122.0 (18)
O1—C4—C3i121.52 (10)C12—C11—H12117.1 (18)
O1—C4—C3121.51 (10)C7—C12—C11120.2 (3)
C3i—C4—C3116.9 (2)C7—C12—H11116.3 (15)
C12—C7—C8118.1 (2)C11—C12—H11123.4 (15)
Symmetry code: (i) x, y+1/2, z.

Experimental details

Crystal data
Chemical formulaC17H16OS
Mr268.36
Crystal system, space groupOrthorhombic, Pnma
Temperature (K)293
a, b, c (Å)10.867 (3), 24.284 (4), 5.427 (2)
V3)1432.2 (7)
Z4
Radiation typeCu Kα
µ (mm1)1.90
Crystal size (mm)0.20 × 0.12 × 0.08
Data collection
DiffractometerEnraf-Nonius CAD-4
diffractometer
Absorption correction
No. of measured, independent and
observed [I > 2σ(I)] reflections
1585, 1436, 1285
Rint0.007
(sin θ/λ)max1)0.616
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.043, 0.123, 1.17
No. of reflections1436
No. of parameters124
H-atom treatmentOnly H-atom displacement parameters refined
Δρmax, Δρmin (e Å3)0.35, 0.18

Computer programs: CAD-4 Software (Enraf-Nonius, 1989), CAD-4 Software, SHELXS97 (Sheldrick, 1990), SHELXL97 (Sheldrick, 1997), PLUTO (Motherwell & Clegg, 1978), SHELXL97.

 

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