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The title mol­ecule, C16H22O2, reveals Ci point symmetry in the crystal structure. The structure was disordered. The pyran ring is not planar; the O atom lies significantly out of the least-squares plane (ten times the r.m.s. deviation of all six atoms).

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S0108270100007885/qa0317sup1.cif
Contains datablocks I, global

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S0108270100007885/qa0317Isup2.hkl
Contains datablock I

CCDC reference: 147698

Comment top

Bipyranyls and pyrylium salts are used for photochemical redox reactions. Bipyranyls may be applied as 2 e donors in photoreductions, e.g. such as

2acrH+ + (tmp)2 + hν 2tmp+ + (acrH)2,

where acrH+ is acridinium and tmp+ is 2,4,6-trimethylpyrylium. For photo-oxidations with pyrylium salts as e acceptors, attention has to be paid to the equilibrium of bipyranyl and the pyranyl radical.

tmp+ + two-dimensional + hν two-dimensional+. + 2tmp. K (tmp)2;

where D = e donor.

The title molecule, C16H22O2, reveals Ci point symmetry in the crystal structure. The structure was disordered in such a way that each of three C atoms of the pyran ring occupies statisticially two sites with a ratio of 89/11. The sites of the other three ring atoms are not split. This means that the two ring positions are arranged like a roof with an interfacial angle of about 24°. A second crystal studied showed the same effect with a similar occupation ratio of 81/19 and a corresponding interfacial angle of about 27°. The pyran ring is not planar; the O atom lies significantly out of the least-squares plane (10 × the r.m.s. deviation of all six atoms).

Experimental top

The title compound was synthesized according to Balaban et al. (1964) and crystallized from ethanol.

Refinement top

The structure is disordered so that split atomic positions of C3, C4 and C5 had to be introduced for the least squares refinement. Without such a `split model', all parameters of quality for a structure determination become worse as follows: R1(gt) increases from 0.0438 to 0.0751; wR2(all) increases from 0.1185 to 0.2182; GoF changes from 1.039 to 1.066; the long axes of the thermal ellipsoids of C3, C4 and C5 increase by a factor of about 1.35; and last but not least the three highest peaks in the final difmap become significantly larger (1.02, 0.82 and 0.77 e Å−3) than its r.m.s. (0.07 e Å−3); the peaks lie nearest to C4 (1.09 Å), C5 (0.82 Å) and C3 (0.79 Å), respectively.

Computing details top

Data collection: IPDS2.87 (Stoe & Cie, 1997); cell refinement: IPDS2.87; data reduction: IPDS2.87; program(s) used to solve structure: SHELXS97 (Sheldrick, 1990); program(s) used to refine structure: SHELXL97 (Sheldrick, 1997); software used to prepare material for publication: SHELXL97.

2,4,6,2',4',6'-Hexamethyl-4H,4'H[4,4']bipyranyl top
Crystal data top
C16H22O2Dx = 1.132 Mg m3
Mr = 246.34Melting point: 385(1) K
Monoclinic, P21/cMo Kα radiation, λ = 0.71073 Å
a = 7.842 (2) ÅCell parameters from 5000 reflections
b = 11.458 (3) Åθ = 2.0–24.0°
c = 8.824 (2) ŵ = 0.07 mm1
β = 114.26 (3)°T = 180 K
V = 722.9 (3) Å3Plate, colourless
Z = 20.52 × 0.40 × 0.22 mm
F(000) = 268
Data collection top
Stoe IPDS
diffractometer
1393 reflections with I > 2σ(I)
Radiation source: fine-focus sealed X-ray tubeRint = 0.033
Planar graphite monochromatorθmax = 28.1°, θmin = 3.4°
Detector resolution: 6.667 pixels mm-1h = 1010
ϕ–rotation, ϕ–incr. = 1.5°, 160 exposures scansk = 1515
5901 measured reflectionsl = 1111
1716 independent reflections
Refinement top
Refinement on F2Primary atom site location: structure-invariant direct methods
Least-squares matrix: fullSecondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.044Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.119H atoms treated by a mixture of independent and constrained refinement
S = 1.04 w = 1/[σ2(Fo2) + (0.065P)2 + 0.1273P]
where P = (Fo2 + 2Fc2)/3
1716 reflections(Δ/σ)max = 0.003
121 parametersΔρmax = 0.22 e Å3
0 restraintsΔρmin = 0.16 e Å3
Crystal data top
C16H22O2V = 722.9 (3) Å3
Mr = 246.34Z = 2
Monoclinic, P21/cMo Kα radiation
a = 7.842 (2) ŵ = 0.07 mm1
b = 11.458 (3) ÅT = 180 K
c = 8.824 (2) Å0.52 × 0.40 × 0.22 mm
β = 114.26 (3)°
Data collection top
Stoe IPDS
diffractometer
1393 reflections with I > 2σ(I)
5901 measured reflectionsRint = 0.033
1716 independent reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0440 restraints
wR(F2) = 0.119H atoms treated by a mixture of independent and constrained refinement
S = 1.04Δρmax = 0.22 e Å3
1716 reflectionsΔρmin = 0.16 e Å3
121 parameters
Special details top

Experimental. Recrystallized from methanol. During data collection the crystal was in cold N2 gas of the Cryostream Cooler (Oxford Cryosystems, 1992) mounted on a ϕ-axis diffractometer supplied with an area detector.

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/UeqOcc. (<1)
C20.73063 (16)0.83938 (10)0.06204 (13)0.0281 (3)
C30.8723 (3)0.85917 (15)0.0177 (2)0.0266 (4)0.891 (4)
H30.89070.80510.05590.029*0.891 (4)
C3S0.803 (2)0.8875 (12)0.0326 (19)0.026 (3)0.109 (4)
H3S0.79590.84180.12470.028*0.109 (4)
C41.00485 (16)0.96160 (10)0.07662 (14)0.0234 (4)0.891 (4)
C4S0.8967 (14)1.0075 (7)0.0162 (11)0.023 (3)0.109 (4)
C50.9479 (3)1.03271 (15)0.1930 (2)0.0269 (3)0.891 (4)
H51.01951.10040.24180.030*0.891 (4)
C5S0.879 (2)1.0618 (11)0.1365 (17)0.022 (3)0.109 (4)
H5S0.92281.13940.16570.024*0.109 (4)
C60.80534 (16)1.00757 (10)0.23210 (13)0.0283 (3)
C70.59953 (19)0.73796 (11)0.01132 (17)0.0387 (3)
H7A0.62070.68920.10860.043*
H7B0.62160.69180.07240.043*
H7C0.47030.76640.03560.043*
C81.20699 (16)0.91696 (11)0.17409 (15)0.0319 (3)
H8A1.294 (2)0.9824 (13)0.2193 (17)0.035*
H8B1.251 (2)0.8719 (13)0.1089 (17)0.035*
H8C1.209 (2)0.8641 (12)0.2617 (18)0.035*
C90.7508 (2)1.07188 (12)0.35281 (16)0.0406 (3)
H9A0.61951.09570.29760.045*
H9B0.82991.14120.39300.045*
H9C0.76731.02090.44700.045*
O10.69443 (12)0.90995 (8)0.17293 (11)0.0371 (3)
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
C20.0295 (6)0.0277 (5)0.0284 (5)0.0042 (4)0.0132 (4)0.0009 (4)
C30.0273 (9)0.0237 (8)0.0317 (8)0.0012 (6)0.0150 (7)0.0020 (6)
C3S0.028 (7)0.023 (6)0.028 (7)0.006 (5)0.014 (6)0.014 (5)
C40.0198 (6)0.0248 (6)0.0269 (6)0.0009 (4)0.0108 (5)0.0002 (5)
C4S0.039 (6)0.015 (4)0.017 (4)0.000 (4)0.013 (4)0.002 (3)
C50.0275 (8)0.0262 (7)0.0272 (8)0.0034 (6)0.0113 (6)0.0030 (6)
C5S0.029 (7)0.018 (5)0.022 (6)0.005 (4)0.013 (5)0.009 (4)
C60.0310 (6)0.0288 (5)0.0279 (5)0.0006 (4)0.0149 (4)0.0013 (4)
C70.0374 (7)0.0350 (6)0.0458 (7)0.0121 (5)0.0193 (5)0.0038 (5)
C80.0247 (6)0.0351 (6)0.0340 (6)0.0055 (5)0.0103 (5)0.0054 (5)
C90.0528 (8)0.0392 (7)0.0412 (7)0.0004 (6)0.0307 (6)0.0045 (5)
O10.0385 (5)0.0388 (5)0.0451 (5)0.0113 (4)0.0285 (4)0.0098 (4)
Geometric parameters (Å, º) top
C2—C3S1.306 (14)C4S—C4Si1.53 (2)
C2—C31.340 (2)C4S—C5S1.542 (13)
C2—O11.3856 (14)C4S—C8i1.556 (9)
C2—C71.4931 (16)C5—C61.3303 (19)
C3—C41.511 (2)C5S—C61.353 (12)
C3S—C4S1.539 (15)C6—O11.3810 (14)
C4—C51.5147 (18)C6—C91.4948 (15)
C4—C81.5472 (16)C8—C4Si1.556 (9)
C4—C4i1.589 (2)
C3S—C2—C327.7 (7)C4Si—C4S—C5S110.5 (10)
C3S—C2—O1118.2 (5)C3S—C4S—C5S103.3 (8)
C3—C2—O1122.85 (11)C4Si—C4S—C8i110.7 (8)
C3S—C2—C7124.2 (5)C3S—C4S—C8i111.0 (9)
C3—C2—C7126.54 (12)C5S—C4S—C8i110.9 (8)
O1—C2—C7110.50 (10)C6—C5—C4124.93 (13)
C2—C3—C4124.49 (14)C6—C5S—C4S125.1 (8)
C2—C3S—C4S129.3 (9)C5—C6—C5S28.3 (6)
C3—C4—C5107.37 (11)C5—C6—O1122.91 (11)
C3—C4—C8109.71 (12)C5S—C6—O1120.0 (4)
C5—C4—C8108.71 (11)C5—C6—C9126.51 (12)
C3—C4—C4i110.59 (12)C5S—C6—C9122.5 (5)
C5—C4—C4i110.77 (13)O1—C6—C9110.40 (10)
C8—C4—C4i109.64 (11)C4—C8—C4Si43.9 (4)
C4Si—C4S—C3S110.3 (10)C6—O1—C2117.37 (9)
C3S—C2—C3—C486.6 (12)C8i—C4S—C5S—C6122.4 (13)
O1—C2—C3—C42.3 (2)C4—C5—C6—C5S91.3 (10)
C7—C2—C3—C4178.11 (13)C4—C5—C6—O11.9 (3)
C3—C2—C3S—C4S92.3 (19)C4—C5—C6—C9176.63 (13)
O1—C2—C3S—C4S15 (2)C4S—C5S—C6—C586.8 (16)
C7—C2—C3S—C4S163.0 (11)C4S—C5S—C6—O117.7 (17)
C2—C3—C4—C50.8 (2)C4S—C5S—C6—C9165.5 (9)
C2—C3—C4—C8118.79 (18)C3—C4—C8—C4Si120.8 (5)
C2—C3—C4—C4i120.16 (18)C5—C4—C8—C4Si122.0 (5)
C2—C3S—C4S—C4Si115.7 (16)C4i—C4—C8—C4Si0.8 (5)
C2—C3S—C4S—C5S2 (2)C5—C6—O1—C23.08 (19)
C2—C3S—C4S—C8i121.3 (15)C5S—C6—O1—C230.1 (8)
C3—C4—C5—C60.6 (2)C9—C6—O1—C2178.60 (10)
C8—C4—C5—C6119.22 (18)C3S—C2—O1—C628.5 (9)
C4i—C4—C5—C6120.25 (19)C3—C2—O1—C63.30 (19)
C4Si—C4S—C5S—C6114.6 (14)C7—C2—O1—C6179.71 (10)
C3S—C4S—C5S—C63.4 (19)
Symmetry code: (i) x+2, y+2, z.

Experimental details

Crystal data
Chemical formulaC16H22O2
Mr246.34
Crystal system, space groupMonoclinic, P21/c
Temperature (K)180
a, b, c (Å)7.842 (2), 11.458 (3), 8.824 (2)
β (°) 114.26 (3)
V3)722.9 (3)
Z2
Radiation typeMo Kα
µ (mm1)0.07
Crystal size (mm)0.52 × 0.40 × 0.22
Data collection
DiffractometerStoe IPDS
diffractometer
Absorption correction
No. of measured, independent and
observed [I > 2σ(I)] reflections
5901, 1716, 1393
Rint0.033
(sin θ/λ)max1)0.662
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.044, 0.119, 1.04
No. of reflections1716
No. of parameters121
H-atom treatmentH atoms treated by a mixture of independent and constrained refinement
Δρmax, Δρmin (e Å3)0.22, 0.16

Computer programs: IPDS2.87 (Stoe & Cie, 1997), IPDS2.87, SHELXS97 (Sheldrick, 1990), SHELXL97 (Sheldrick, 1997), SHELXL97.

 

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