Download citation
Download citation
link to html
The Al0.45Ga0.55As/InxGa1−xAs active regions in quantum cascade laser structures grown on (001) GaAs substrates were investigated using the high-resolution X-ray diffraction method. The onset of the strain relaxation process has been studied. Reciprocal-space mapping showed that diffuse scattering is visible in the early stage of relaxation for the structure with x = 2.64% in the InxGa1−xAs layers. It has been proved that the diffuse scattering is the result of misfit dislocations generated by partial relaxation of the structures. The integration of the diffuse scattering has enabled determination of the dislocation density.

Follow J. Appl. Cryst.
Sign up for e-alerts
Follow J. Appl. Cryst. on Twitter
Follow us on facebook
Sign up for RSS feeds