Ba₃Ga₂N₄

The crystal structure of barium gallium nitride is based on a distorted cubic close packing of N atoms with three-quarters of the octahedral holes occupied by Ba atoms and one-quarter of the tetrahedral holes occupied by Ga atoms. The GaN₄ tetrahedra share edges and form [GaN_4/2^3-] chains which are isosteric to edge-sharing SiS₂ tetrahedra in the SiS₂ structure.

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