Grazing incidence small-angle X-ray scattering and diffraction study of the resistance of Mo implanted Si wafer after annealing

Grazing-incidence small-angle X-ray scattering and X-ray diffraction were used to probe the particle size and distribution of MoSi₂ in a Mo ion implanted Si(100) wafer at 1073 K after different annealing times. The sheet resistance of the sample decreases at the beginning of annealing due to the recovery of defects and then increases due to the growth of larger and separated particles. The particle size of MoSi₂ determined by the grazing incidence small angle X-ray scattering is larger than that determined by the in-plane wide angle X-ray diffraction, which might indicate that the MoSi₂ particle consists of a larger amount of disordered components or is a cluster of several smaller well-ordered grains.