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The application of X-ray mapping in reciprocal space to the measurement of subtle strain modifications in heterostructures is analysed, focussing on strain analysis in non-cubic crystals. Special attention is paid to the enhancement of the precision of the mapping technique in comparison with conventional diffraction profile measurements. The capabilities of the mapping-based strain analysis are illustrated by selected examples of epitaxially grown structures (obeying Vegard's rule), as well as implanted structures with unknown mismatches between the lattice parameters of the damaged layer and of the crystal bulk.

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