XAFS study on gallium ions implanted in silicon carbide

Local structure of gallium ions implanted in silicon carbide has been investigated using extended X-ray absorption fine structure on the Ga K-edge. The crystallinity of the implantation layer is compared in the samples prepared under several different conditions of implantation temperature and post-implantation annealing. It is found that significant damage is induced by the implantation at room temperature, but the crystallinity recovers by the subsequent annealing at high temperature at 1600 °C. On the other hand, the best crystallinity is obtained by the implantation at high temperature of 500 °C, but the annealing results in degrading the crystallinity. This indicates an influence of the post-implantation annealing at high temperature on the crystallinity in atomic level, which relates to the secondary defects in lattice observed by electron microscope.