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We report the single crystal structures of 1,4-bis­(triisopropyl­silyl)buta-1,3-diyne, C22H42Si2, and 1,4-bis­(biphenyl-4-yl)buta-1,3-diyne, C28H18, the packing in both of which illustrates the versatility of weak C—H...π supra­molecular inter­actions in dictating the overall solid-state structures.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S0108270106025157/gg3022sup1.cif
Contains datablocks I, II, global

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S0108270106025157/gg3022Isup2.hkl
Contains datablock I

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S0108270106025157/gg3022IIsup3.hkl
Contains datablock II

CCDC references: 296407; 296408

Comment top

We have been interested in the development of polyalkyne-based stars and dendrimers and their reactions with Co2(CO)8 to produce organometallic cluster-decorated architectures (Constable et al., 2006). We have used Sonogashira palladium-catalysed cross-coupling reactions (Sonogashira et al., 1975; Sonogashira, 2002) for the divergent assembly of polyalkynes containing rigid frameworks with well defined structures. Under Sonogashira conditions, reactions between terminal alkynes (RCCH) and aryl halides can give rise to diynes, RCC—CCR, as side-products (these most often arise from bromo precursors) (Sonogashira et al. 1975; Sonogashira 2002). Related reactions (Liu & Burton, 1997) or modified Sonogashira conditions (Rossi et al., 1985) have been used for the specific formation of diynes. Two molecular cores that we have investigated are hexakis[(triisopropylsilyl)ethynyl]benzene and 4,4'-bis(biphenyl-4-ylethynyl)biphenyl. During attempts to synthesize these compounds, we found that 1,4-bis(triisopropylsilyl)buta-1,3-diyne, (I), and 1,4-di(biphenyl-4-yl)buta-1,3-diyne, (II), could be produced quantitatively.

With the aim of preparing C6(CCSiiPr3)6, we treated C6I6 with six equivalents of iPr3SiCCH under Sonogashira cross-coupling conditions. Instead of the desired product, compound (I) was formed quantitatively under the conditions shown in the scheme. This was also the case when C6Br6 was used as the precursor. Similarly (see scheme), the palladium-catalysed cross-coupling reaction between 4-ethynylbiphenyl and 4,4'-dibromobiphenyl led to the quantitative formation of (II). Compounds (I) and (II) have previously been reported (Eisler et al., 2005; Hlavatý et al., 2002; Ried & Saxena, 1970; Toda & Tokumaru, 1990), but have not, to our knowledge, been structurally characterized. Here, we report their single-crystal structures, which illustrate a number of facets of weak C—H···π interactions in dictating solid-state structures. Such hydrogen bonds are now well established as important components in solid-state supramolecular assemblies (Desiraju, 2002, 2005; Desiraju & Steiner, 1999; Nishio, 2004; Nishio et al., 1998; Steiner, 2002), and their role in organic reactions has recently been assessed (Nishio, 2005).

X-ray quality crystals of (I) were grown from a CH2Cl2 solution. Fig. 1 shows the structure of the centrosymmetric molecule of (I). The carbon backbone is linear, as observed for Me3Si(CC)2SiMe3 (Carré et al., 2003) and iPr3Si(C C)nSiiPr3 (n = 4, 5 or 6; Eisler et al., 2005), in contrast with the curved backbone of iPr3Si(CC)8SiiPr3 (Eisler et al., 2005). The C—Si—C bond angles lie in the range 105.97 (9)–116.94 (13)°.

Molecules of (I) pack in rows (Fig. 2a), such that the distance between the least-squares planes containing adjacent rows of SiCCCCSi chains is 5.8 Å. Adjacent chains are interlocked, with the packing being supported by close methyl C—H to alkyne π interactions (C8—H83···C1 = 2.9 Å and C8—H83···C2 = 3.1 Å). This leads to the presence of close (repulsive) H···H contacts (Me2C—H61···H61—CMe2 = 2.7 Å). A second set of C—H···π interactions operates between molecules within each row (Fig. 2b). Their evolution gives rise to short H···H contacts between pairs of molecules.

The structures of a number of molecules closely related to (I) have been determined and comparisons of the solid-state packing are instructive. A search of the Cambridge Structural Database (CSD, Version 5.2.7; Allen, 2002; Bruno et al., 2002) for molecules containing an E—C C—C C–E unit (E is Si, Sn, Ge or Pb) gave only 14 hits (Brouty et al., 1980; Brunel et al., 2001; Carré et al., 1999, 2003; Dam et al., 1998; Neugebauer et al., 2000). Among these are two polymorphs of Me3SiCCCCSiMe3 (structures determined at 120 and 203 K; Carré et al., 2003). The packing of the molecules in both polymorphs differs from that in (I). Although the molecules are interlocked by virtue of the close approach of SiMe3 and alkyne groups, molecules in both polymorphs of Me3SiCCC CSiMe3 form grid-like assemblies, in contrast with the parallel alignment of molecules observed in the solid state of (I).

Compound (I) is a member of a family of polyynes, iPr3Si(C C)nSiiPr3 (n = 4, 5, 6 and 8; Eisler et al., 2005). The solid-state packing of iPr3Si(C C)4SiiPr3 resembles that of (I), with molecules organized in offset rows, while for iPr3Si(C C)5SiiPr3 and iPr3Si(CC)6SiiPr3, a herringbone assembly is observed. In iPr3Si(CC)8SiiPr3, the polyyne backbone is significantly curved and the molecular packing is less readily compared with that of the smaller polyynes (Eisler et al., 2005).

Crystals of (II) were grown from a CH2Cl2 solution, and the molecular structure is shown in Fig. 3. The molecule is slightly bowed and the aryl rings are twisted with respect to one another, so that the angles between the least-squares planes of the rings containing atoms C6 and C7, atoms C7 and C22, and atoms C22 and C23 are 28.70 (7), 61.07 (6) and 44.22 (6)°, respectively. The origin of these ring orientations can be traced to the intermolecular C—H···π interactions listed in Table 3. The basic motif in the solid state is a dimeric unit (Fig. 4a), in which both C—Haryl···πalkyne and C—Haryl···πaryl interactions are present (Table 3).

The dimers further assemble into layers (Fig. 4b), again with C—H···π interactions playing a role (Table 3). Stacking of planes of molecules into the three-dimensional lattice is also supported by C—H···π contacts (Table 3). The molecular structure of (II) shows interesting contrasts with that of 1,4-diphenylbuta-1,3-diyne (Fronczek & Erickson, 1995; Surette et al., 1994). Molecules of the latter are planar in the solid state and pack in a herringbone arrangement. Whereas C—H···π contacts control the ring orientations and packing in (II), π-stacking interactions are important in 1,4-diphenylbuta-1,3-diyne. Also related to (II) is 4-ethynylbiphenyl (Mague et al., 1997). As in (II), the biphenyl unit of 4-ethynylbiphenyl is non-planar. The authors (Mague et al., 1997) describe the structure as containing "no significant intermolecular interactions", although inspection of the data indicate the presence of weak C—Halkyne···πaryl contacts.

In conclusion, we have investigated the solid-state structures of two simple diynes and in both cases find that weak C—H···π contacts control the molecular packing. In the case of 1,4-di(biphenyl-4-yl)buta-1,3-diyne, a combination of C—Haryl···πalkyne and C—Haryl···πaryl interactions operate at the expense of π-stacking interactions.

Experimental top

Compound (I), previously prepared directly (Eisler et al., 2005; Hlavatý et al., 2002), was the product of an unsuccessful attempt to prepare C6(CCSiiPr3)6. C6I6 (1.00 g, 1.20 mmol), CuCl (17.8 mg, 0.18 mmol) and [Pd(PPh3)2Cl2] (126 mg, 0.18 mmol) were added to Et3N (75 ml), and after the addition of iPr3SiCCH (2.13 ml, 9.60 mmol) the mixture was stirred at 333 K for 12 h under argon. The solvent was removed and the residue was extracted with 30% CH2Cl2 in hexanes (200 ml). The product was purified by column chromatography (alumina, hexanes) and (I) was collected as a dark-yellow solid (1.74 g, 100%; m.p. 369 K). FAB–MS m/z 362 ([M]+), 319 ([M - iPr], base peak); 1H NMR (400 MHz, CDCl3, δ, p.p.m.): 1.09 (s, TIPS); 13C NMR (125 MHz, CDCl3, δ, p.p.m.): 90.2 (CC), 81.6 (CC), 18.6 (CH), 11.3 (CH3); IR (solid, ν, cm-1): 2943 (s), 2866 (s), 2050 (s), 1458 (s), 1383 (s), 1365 (s), 1230 (m), 1011 (s), 991 (s), 881 (vs), 663 (vs), 625 (vs). Crystals were grown from a solution in CH2Cl2.

The route to compound (II) was optimized during attempts to prepare 4,4'-bis(biphenyl-4-ylethynyl)biphenyl. 4,4'-Dibromobiphenyl (233 mg, 1.00 mmol), CuCl (14.9 mg, 0.15 mmol) and [Pd(PPh3)2Cl2] (105 mg, 0.15 mmol) were added to Et3N (40 ml), and after the addition of 4-ethynylbiphenyl (Foroozesh et al., 1997) (196 mg, 1.10 mmol) the mixture was stirred at 333 K for 18 h under argon. The solvent was removed, the residue was redissolved in hexanes (150 ml) and the mixture was filtered. The product was purified by column chromatography (alumina, hexanes–CH2Cl2, 1:4) to yield (II) as a yellow solid (195 mg, 100%; m.p. 513 K). FAB–MS m/z 354 ([M]+, base peak), 177 ([M - PhC6H4CC]+); 1H NMR (400 MHz, CDCl3, δ, p.p.m.): 7.60 [m, 12H, H(B2,B3,A2)], 7.46 [m, 4H, H(A3)], 7.38 [t, 2H, H(A4)]; 13C NMR (125 MHz, CDCl3, δ, p.p.m.): 141.9 [C(1A/1B)], 140.0 [C(1B/1A)], 132.9 [C(3B)], 128.9 [C(3A)], 127.9 [C(4A)], 127.1 [C(2A)], 127.0 [C(2B)], 120.6 [C(4B)], 81.8 [C(ArC C)], 74.6 [C(ArCC); IR (solid, ν, cm-1): 3059 (w), 3036 (w), 2133 (w), 1599 (m), 1481 (s), 1448 (s), 839 (vs), 762 (vs), 721 (vs), 696 (vs). Crystals of (II) were grown from a solution in CH2Cl2.

Refinement top

All H atoms were treated as riding, with C—H distances of 1.00 Å and with Uiso(H) = 1.2Ueq(C).

Structure description top

We have been interested in the development of polyalkyne-based stars and dendrimers and their reactions with Co2(CO)8 to produce organometallic cluster-decorated architectures (Constable et al., 2006). We have used Sonogashira palladium-catalysed cross-coupling reactions (Sonogashira et al., 1975; Sonogashira, 2002) for the divergent assembly of polyalkynes containing rigid frameworks with well defined structures. Under Sonogashira conditions, reactions between terminal alkynes (RCCH) and aryl halides can give rise to diynes, RCC—CCR, as side-products (these most often arise from bromo precursors) (Sonogashira et al. 1975; Sonogashira 2002). Related reactions (Liu & Burton, 1997) or modified Sonogashira conditions (Rossi et al., 1985) have been used for the specific formation of diynes. Two molecular cores that we have investigated are hexakis[(triisopropylsilyl)ethynyl]benzene and 4,4'-bis(biphenyl-4-ylethynyl)biphenyl. During attempts to synthesize these compounds, we found that 1,4-bis(triisopropylsilyl)buta-1,3-diyne, (I), and 1,4-di(biphenyl-4-yl)buta-1,3-diyne, (II), could be produced quantitatively.

With the aim of preparing C6(CCSiiPr3)6, we treated C6I6 with six equivalents of iPr3SiCCH under Sonogashira cross-coupling conditions. Instead of the desired product, compound (I) was formed quantitatively under the conditions shown in the scheme. This was also the case when C6Br6 was used as the precursor. Similarly (see scheme), the palladium-catalysed cross-coupling reaction between 4-ethynylbiphenyl and 4,4'-dibromobiphenyl led to the quantitative formation of (II). Compounds (I) and (II) have previously been reported (Eisler et al., 2005; Hlavatý et al., 2002; Ried & Saxena, 1970; Toda & Tokumaru, 1990), but have not, to our knowledge, been structurally characterized. Here, we report their single-crystal structures, which illustrate a number of facets of weak C—H···π interactions in dictating solid-state structures. Such hydrogen bonds are now well established as important components in solid-state supramolecular assemblies (Desiraju, 2002, 2005; Desiraju & Steiner, 1999; Nishio, 2004; Nishio et al., 1998; Steiner, 2002), and their role in organic reactions has recently been assessed (Nishio, 2005).

X-ray quality crystals of (I) were grown from a CH2Cl2 solution. Fig. 1 shows the structure of the centrosymmetric molecule of (I). The carbon backbone is linear, as observed for Me3Si(CC)2SiMe3 (Carré et al., 2003) and iPr3Si(C C)nSiiPr3 (n = 4, 5 or 6; Eisler et al., 2005), in contrast with the curved backbone of iPr3Si(CC)8SiiPr3 (Eisler et al., 2005). The C—Si—C bond angles lie in the range 105.97 (9)–116.94 (13)°.

Molecules of (I) pack in rows (Fig. 2a), such that the distance between the least-squares planes containing adjacent rows of SiCCCCSi chains is 5.8 Å. Adjacent chains are interlocked, with the packing being supported by close methyl C—H to alkyne π interactions (C8—H83···C1 = 2.9 Å and C8—H83···C2 = 3.1 Å). This leads to the presence of close (repulsive) H···H contacts (Me2C—H61···H61—CMe2 = 2.7 Å). A second set of C—H···π interactions operates between molecules within each row (Fig. 2b). Their evolution gives rise to short H···H contacts between pairs of molecules.

The structures of a number of molecules closely related to (I) have been determined and comparisons of the solid-state packing are instructive. A search of the Cambridge Structural Database (CSD, Version 5.2.7; Allen, 2002; Bruno et al., 2002) for molecules containing an E—C C—C C–E unit (E is Si, Sn, Ge or Pb) gave only 14 hits (Brouty et al., 1980; Brunel et al., 2001; Carré et al., 1999, 2003; Dam et al., 1998; Neugebauer et al., 2000). Among these are two polymorphs of Me3SiCCCCSiMe3 (structures determined at 120 and 203 K; Carré et al., 2003). The packing of the molecules in both polymorphs differs from that in (I). Although the molecules are interlocked by virtue of the close approach of SiMe3 and alkyne groups, molecules in both polymorphs of Me3SiCCC CSiMe3 form grid-like assemblies, in contrast with the parallel alignment of molecules observed in the solid state of (I).

Compound (I) is a member of a family of polyynes, iPr3Si(C C)nSiiPr3 (n = 4, 5, 6 and 8; Eisler et al., 2005). The solid-state packing of iPr3Si(C C)4SiiPr3 resembles that of (I), with molecules organized in offset rows, while for iPr3Si(C C)5SiiPr3 and iPr3Si(CC)6SiiPr3, a herringbone assembly is observed. In iPr3Si(CC)8SiiPr3, the polyyne backbone is significantly curved and the molecular packing is less readily compared with that of the smaller polyynes (Eisler et al., 2005).

Crystals of (II) were grown from a CH2Cl2 solution, and the molecular structure is shown in Fig. 3. The molecule is slightly bowed and the aryl rings are twisted with respect to one another, so that the angles between the least-squares planes of the rings containing atoms C6 and C7, atoms C7 and C22, and atoms C22 and C23 are 28.70 (7), 61.07 (6) and 44.22 (6)°, respectively. The origin of these ring orientations can be traced to the intermolecular C—H···π interactions listed in Table 3. The basic motif in the solid state is a dimeric unit (Fig. 4a), in which both C—Haryl···πalkyne and C—Haryl···πaryl interactions are present (Table 3).

The dimers further assemble into layers (Fig. 4b), again with C—H···π interactions playing a role (Table 3). Stacking of planes of molecules into the three-dimensional lattice is also supported by C—H···π contacts (Table 3). The molecular structure of (II) shows interesting contrasts with that of 1,4-diphenylbuta-1,3-diyne (Fronczek & Erickson, 1995; Surette et al., 1994). Molecules of the latter are planar in the solid state and pack in a herringbone arrangement. Whereas C—H···π contacts control the ring orientations and packing in (II), π-stacking interactions are important in 1,4-diphenylbuta-1,3-diyne. Also related to (II) is 4-ethynylbiphenyl (Mague et al., 1997). As in (II), the biphenyl unit of 4-ethynylbiphenyl is non-planar. The authors (Mague et al., 1997) describe the structure as containing "no significant intermolecular interactions", although inspection of the data indicate the presence of weak C—Halkyne···πaryl contacts.

In conclusion, we have investigated the solid-state structures of two simple diynes and in both cases find that weak C—H···π contacts control the molecular packing. In the case of 1,4-di(biphenyl-4-yl)buta-1,3-diyne, a combination of C—Haryl···πalkyne and C—Haryl···πaryl interactions operate at the expense of π-stacking interactions.

Computing details top

For both compounds, data collection: COLLECT (Nonius, 2001); cell refinement: DENZO and SCALEPACK (Otwinowski & Minor, 1997); data reduction: DENZO and SCALEPACK; program(s) used to solve structure: SIR92 (Altomare et al., 1994); program(s) used to refine structure: CRYSTALS (Betteridge et al., 2003); molecular graphics: ORTEP-3 (Farrugia, 1997); software used to prepare material for publication: CRYSTALS.

Figures top
[Figure 1] Fig. 1. The molecular structure of (I), showing the atom-numbering scheme. Displacement ellipsoids are drawn at the 30% probability level and H atoms are shown as small spheres of arbitary radii. Unlabelled atoms and symmetry code (i) are generated by the symmetry operator (-x + 2, -y + 1, -z + 1).
[Figure 2] Fig. 2. (a) The packing of molecules of (I), showing parts of two offset rows. (b) C—H···π interactions between adjacent molecules in a row (C2i···H53ii = 3.2 Å; C1i···H53ii = 2.9 Å; C1···H53ii = 3.1 Å). [Symmetry codes: (i) -x + 2, -y + 1, -z + 1; (ii) 1 - x, 1 - y, 1 - z.]
[Figure 3] Fig. 3. The molecular structure of (II), showing the atom-numbering scheme. Displacement ellipsoids are drawn at the 50% probability level and H atoms are shown as small spheres of arbitary radii.
[Figure 4] Fig. 4. (a) The dimeric motif in the solid-state structure of (II). [Symmetry code (i) 1 - x, 1 - y, -z.] (b) The packing of molecules of (II) into layers. Two dimeric units are shown in the middle of the figure.
(I) 1,4-bis(triisopropylsilyl)buta-1,3-diyne top
Crystal data top
C22H42Si2Z = 1
Mr = 362.75F(000) = 202
Triclinic, P1Dx = 1.006 Mg m3
Hall symbol: -P 1Mo Kα radiation, λ = 0.71073 Å
a = 7.2397 (4) ÅCell parameters from 3524 reflections
b = 7.8151 (5) Åθ = 3–30°
c = 10.9548 (5) ŵ = 0.15 mm1
α = 86.680 (5)°T = 173 K
β = 80.485 (4)°Plate, colourless
γ = 78.542 (4)°0.30 × 0.16 × 0.14 mm
V = 598.90 (6) Å3
Data collection top
Nonius KappaCCD area-detector
diffractometer
2019 reflections with I > 3σ(I)
Graphite monochromatorRint = 0.069
φ and ω scansθmax = 30.0°, θmin = 3.2°
Absorption correction: multi-scan
DENZO and SCALEPACK (Otwinowski & Minor, 1997)
h = 1010
Tmin = 0.98, Tmax = 0.98k = 1010
29988 measured reflectionsl = 1515
3478 independent reflections
Refinement top
Refinement on FPrimary atom site location: structure-invariant direct methods
Least-squares matrix: fullHydrogen site location: inferred from neighbouring sites
R[F2 > 2σ(F2)] = 0.050H-atom parameters constrained
wR(F2) = 0.054 Method, part 1, Chebychev polynomial, (Watkin, 1994; Prince, 1982) [weight] = 1.0/[A0T0(x) + A1T1(x) ··· + An-1Tn-1(x)],
where Ai are the Chebychev coefficients listed below and x = F /Fmax Method = robust weighting (Prince, 1982) W = [weight][1-(ΔF/6σF)2]2 Ai are 1.89 -0.168 1.21
S = 1.09(Δ/σ)max = 0.007
2019 reflectionsΔρmax = 0.93 e Å3
109 parametersΔρmin = 0.64 e Å3
0 restraints
Crystal data top
C22H42Si2γ = 78.542 (4)°
Mr = 362.75V = 598.90 (6) Å3
Triclinic, P1Z = 1
a = 7.2397 (4) ÅMo Kα radiation
b = 7.8151 (5) ŵ = 0.15 mm1
c = 10.9548 (5) ÅT = 173 K
α = 86.680 (5)°0.30 × 0.16 × 0.14 mm
β = 80.485 (4)°
Data collection top
Nonius KappaCCD area-detector
diffractometer
3478 independent reflections
Absorption correction: multi-scan
DENZO and SCALEPACK (Otwinowski & Minor, 1997)
2019 reflections with I > 3σ(I)
Tmin = 0.98, Tmax = 0.98Rint = 0.069
29988 measured reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0500 restraints
wR(F2) = 0.054H-atom parameters constrained
S = 1.09Δρmax = 0.93 e Å3
2019 reflectionsΔρmin = 0.64 e Å3
109 parameters
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
C10.9569 (2)0.4465 (2)0.54262 (17)0.0297
C20.8806 (3)0.3535 (3)0.61763 (18)0.0325
C30.4976 (3)0.2698 (3)0.7054 (2)0.0410
C40.4047 (4)0.4570 (4)0.7391 (3)0.0594
C50.4776 (4)0.2384 (4)0.5727 (3)0.0573
C60.8595 (3)0.0168 (3)0.68257 (19)0.0388
C71.0699 (4)0.0721 (4)0.6943 (3)0.0610
C80.7444 (5)0.1499 (3)0.7470 (3)0.0674
C90.7757 (4)0.2751 (4)0.8877 (2)0.0596
C100.6525 (5)0.1876 (4)0.9890 (2)0.0615
C110.9605 (7)0.2834 (8)0.9147 (3)0.1148
Si10.75346 (8)0.21347 (8)0.72851 (5)0.0297
H310.42870.19080.76290.0483*
H410.41810.47680.82640.0670*
H420.46880.53960.68200.0670*
H430.26630.47760.73130.0670*
H510.53880.11530.55100.0709*
H520.54190.32060.51530.0709*
H530.33930.25860.56450.0709*
H610.85220.01640.59220.0438*
H711.14190.01690.65160.0681*
H721.08410.08150.78390.0681*
H731.12190.18790.65530.0681*
H810.60710.11040.73780.0764*
H820.75630.15990.83690.0764*
H830.79420.26620.70830.0764*
H910.72030.40290.88720.0746*
H1010.52560.18900.96370.0758*
H1020.63380.25191.06770.0758*
H1030.71770.06411.00190.0758*
H1111.03190.34290.84430.1414*
H1120.94780.34940.99210.1414*
H1131.03170.16160.92630.1414*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
C10.0239 (8)0.0318 (10)0.0326 (9)0.0062 (7)0.0017 (7)0.0007 (7)
C20.0277 (9)0.0334 (10)0.0354 (10)0.0081 (8)0.0000 (7)0.0021 (8)
C30.0278 (9)0.0357 (11)0.0566 (13)0.0100 (8)0.0054 (9)0.0002 (9)
C40.0435 (13)0.0436 (14)0.0807 (19)0.0029 (11)0.0084 (12)0.0058 (13)
C50.0394 (12)0.0649 (17)0.0713 (17)0.0095 (12)0.0187 (12)0.0064 (14)
C60.0429 (11)0.0323 (10)0.0345 (10)0.0028 (9)0.0057 (8)0.0043 (8)
C70.0546 (15)0.0534 (16)0.0620 (16)0.0157 (13)0.0053 (12)0.0055 (13)
C80.088 (2)0.0300 (12)0.0721 (18)0.0165 (12)0.0280 (15)0.0034 (11)
C90.0759 (18)0.0780 (19)0.0339 (11)0.0474 (16)0.0060 (11)0.0040 (11)
C100.083 (2)0.0739 (19)0.0320 (11)0.0399 (16)0.0080 (12)0.0008 (11)
C110.131 (4)0.199 (5)0.0512 (18)0.116 (4)0.018 (2)0.000 (2)
Si10.0289 (3)0.0302 (3)0.0291 (3)0.0106 (2)0.00341 (18)0.00170 (18)
Geometric parameters (Å, º) top
C1—C1i1.373 (3)C7—H711.000
C1—C21.204 (2)C7—H721.000
C2—Si11.8432 (18)C7—H731.000
C3—C41.523 (3)C8—H811.000
C3—C51.523 (4)C8—H821.000
C3—Si11.873 (2)C8—H831.000
C3—H311.000C9—C101.524 (3)
C4—H411.000C9—C111.432 (5)
C4—H421.000C9—Si11.876 (2)
C4—H431.000C9—H911.000
C5—H511.000C10—H1011.000
C5—H521.000C10—H1021.000
C5—H531.000C10—H1031.000
C6—C71.523 (3)C11—H1111.000
C6—C81.530 (3)C11—H1121.000
C6—Si11.873 (2)C11—H1131.000
C6—H611.000
C1i—C1—C2179.6 (3)H72—C7—H73109.5
C1—C2—Si1177.18 (18)C6—C8—H81109.4
C4—C3—C5109.7 (2)C6—C8—H82109.5
C4—C3—Si1112.72 (17)H81—C8—H82109.5
C5—C3—Si1111.02 (15)C6—C8—H83109.5
C4—C3—H31107.5H81—C8—H83109.5
C5—C3—H31109.3H82—C8—H83109.5
Si1—C3—H31106.4C10—C9—C11114.6 (3)
C3—C4—H41109.4C10—C9—Si1112.41 (18)
C3—C4—H42109.5C11—C9—Si1119.0 (2)
H41—C4—H42109.5C10—C9—H91107.6
C3—C4—H43109.5C11—C9—H9198.7
H41—C4—H43109.5Si1—C9—H91101.9
H42—C4—H43109.5C9—C10—H101109.6
C3—C5—H51109.4C9—C10—H102109.6
C3—C5—H52109.4H101—C10—H102109.5
H51—C5—H52109.5C9—C10—H103109.2
C3—C5—H53109.6H101—C10—H103109.5
H51—C5—H53109.5H102—C10—H103109.5
H52—C5—H53109.5C9—C11—H111109.7
C7—C6—C8111.1 (2)C9—C11—H112110.1
C7—C6—Si1113.98 (18)H111—C11—H112109.5
C8—C6—Si1113.26 (15)C9—C11—H113108.6
C7—C6—H61106.4H111—C11—H113109.5
C8—C6—H61107.4H112—C11—H113109.5
Si1—C6—H61104.0C9—Si1—C6116.94 (13)
C6—C7—H71109.5C9—Si1—C3109.87 (12)
C6—C7—H72109.4C6—Si1—C3110.38 (10)
H71—C7—H72109.5C9—Si1—C2106.99 (10)
C6—C7—H73109.4C6—Si1—C2105.97 (9)
H71—C7—H73109.5C3—Si1—C2106.00 (9)
Symmetry code: (i) x+2, y+1, z+1.
(II) 1,4-bis(biphenyl-4-yl)buta-1,3-diyne top
Crystal data top
C28H18F(000) = 744
Mr = 354.45Dx = 1.230 Mg m3
Monoclinic, P21/nMo Kα radiation, λ = 0.71073 Å
Hall symbol: -P 2ynCell parameters from 10543 reflections
a = 6.6723 (2) Åθ = 1–30°
b = 11.0320 (3) ŵ = 0.07 mm1
c = 26.0094 (7) ÅT = 173 K
β = 91.2833 (14)°Block, colourless
V = 1914.04 (9) Å30.27 × 0.22 × 0.20 mm
Z = 4
Data collection top
Nonius KappaCCD area-detector
diffractometer
2992 reflections with I > 2σ(I)
Graphite monochromatorRint = 0.081
φ and ω scansθmax = 30.1°, θmin = 1.6°
Absorption correction: multi-scan
DENZO and SCALEPACK (Otwinowski & Minor, 1997)
h = 99
Tmin = 0.98, Tmax = 0.99k = 1515
21205 measured reflectionsl = 3636
5625 independent reflections
Refinement top
Refinement on FPrimary atom site location: structure-invariant direct methods
Least-squares matrix: fullHydrogen site location: inferred from neighbouring sites
R[F2 > 2σ(F2)] = 0.040H-atom parameters constrained
wR(F2) = 0.047 Method = modified Sheldrick (Reference ), w = 1/[σ2(F2) + (0.03P)2],
where P = [max(Fo2,0) + 2Fc2]/3
S = 0.99(Δ/σ)max = 0.004
2992 reflectionsΔρmax = 0.13 e Å3
253 parametersΔρmin = 0.18 e Å3
0 restraints
Crystal data top
C28H18V = 1914.04 (9) Å3
Mr = 354.45Z = 4
Monoclinic, P21/nMo Kα radiation
a = 6.6723 (2) ŵ = 0.07 mm1
b = 11.0320 (3) ÅT = 173 K
c = 26.0094 (7) Å0.27 × 0.22 × 0.20 mm
β = 91.2833 (14)°
Data collection top
Nonius KappaCCD area-detector
diffractometer
5625 independent reflections
Absorption correction: multi-scan
DENZO and SCALEPACK (Otwinowski & Minor, 1997)
2992 reflections with I > 2σ(I)
Tmin = 0.98, Tmax = 0.99Rint = 0.081
21205 measured reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0400 restraints
wR(F2) = 0.047H-atom parameters constrained
S = 0.99Δρmax = 0.13 e Å3
2992 reflectionsΔρmin = 0.18 e Å3
253 parameters
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
C10.5927 (2)0.68368 (12)0.28227 (5)0.0404
C20.7262 (2)0.74412 (13)0.31455 (6)0.0443
C30.8638 (2)0.82376 (13)0.29479 (6)0.0473
C40.8675 (2)0.84263 (14)0.24233 (6)0.0469
C50.7337 (2)0.78279 (13)0.20981 (6)0.0417
C60.5927 (2)0.70190 (12)0.22909 (5)0.0360
C70.44585 (19)0.63912 (12)0.19488 (5)0.0348
C80.4883 (2)0.61167 (12)0.14374 (5)0.0383
C90.3502 (2)0.55329 (13)0.11215 (5)0.0392
C100.1630 (2)0.51991 (12)0.13049 (5)0.0380
C110.1186 (2)0.54662 (13)0.18163 (5)0.0425
C120.2573 (2)0.60554 (13)0.21262 (5)0.0411
C130.0158 (2)0.46191 (13)0.09803 (5)0.0403
C140.1134 (2)0.41480 (13)0.07189 (5)0.0400
C150.2629 (2)0.36037 (13)0.04304 (5)0.0402
C160.3953 (2)0.31275 (13)0.01812 (5)0.0399
C170.8892 (2)0.24459 (13)0.04483 (5)0.0378
C180.7385 (2)0.30587 (13)0.01827 (5)0.0388
C190.5507 (2)0.25203 (13)0.01075 (5)0.0364
C200.5180 (2)0.13698 (13)0.03093 (5)0.0396
C210.6690 (2)0.07580 (13)0.05649 (5)0.0386
C220.8591 (2)0.12755 (12)0.06373 (5)0.0341
C231.02184 (19)0.05969 (12)0.09049 (5)0.0344
C241.1465 (2)0.11595 (13)0.12693 (5)0.0395
C251.2975 (2)0.05167 (14)0.15205 (6)0.0449
C261.3293 (2)0.06874 (14)0.14039 (6)0.0469
C271.2081 (2)0.12579 (14)0.10409 (6)0.0475
C281.0551 (2)0.06251 (13)0.07936 (5)0.0418
H110.49440.62590.29720.0483*
H210.72290.73000.35250.0530*
H310.96010.86740.31820.0563*
H410.96740.89990.22770.0561*
H510.73790.79760.17190.0500*
H810.62140.63490.12980.0458*
H910.38460.53460.07580.0470*
H1110.01410.52290.19570.0508*
H1210.22240.62480.24890.0492*
H1711.02210.28480.05060.0453*
H1810.76410.38890.00440.0465*
H2010.38290.09850.02680.0473*
H2110.64280.00720.07020.0463*
H2411.12680.20370.13500.0473*
H2511.38380.09260.17870.0535*
H2611.43990.11460.15820.0560*
H2711.23090.21310.09570.0571*
H2810.96750.10460.05330.0500*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
C10.0450 (8)0.0379 (8)0.0385 (8)0.0012 (7)0.0038 (7)0.0022 (7)
C20.0514 (9)0.0410 (8)0.0404 (8)0.0040 (8)0.0010 (7)0.0055 (7)
C30.0480 (9)0.0390 (8)0.0545 (10)0.0006 (7)0.0062 (8)0.0082 (8)
C40.0441 (9)0.0401 (8)0.0565 (10)0.0040 (7)0.0017 (8)0.0011 (8)
C50.0429 (9)0.0405 (8)0.0419 (8)0.0009 (7)0.0044 (7)0.0037 (7)
C60.0368 (8)0.0337 (7)0.0374 (8)0.0059 (6)0.0019 (6)0.0001 (6)
C70.0367 (8)0.0322 (7)0.0354 (7)0.0022 (6)0.0010 (6)0.0033 (6)
C80.0382 (8)0.0397 (8)0.0370 (8)0.0023 (7)0.0044 (6)0.0039 (7)
C90.0458 (9)0.0389 (8)0.0330 (7)0.0021 (7)0.0018 (6)0.0016 (6)
C100.0426 (9)0.0323 (7)0.0390 (8)0.0019 (7)0.0044 (7)0.0039 (6)
C110.0404 (8)0.0457 (9)0.0415 (8)0.0012 (7)0.0037 (7)0.0024 (7)
C120.0426 (8)0.0466 (9)0.0342 (7)0.0003 (7)0.0039 (7)0.0007 (7)
C130.0459 (9)0.0362 (8)0.0388 (8)0.0053 (7)0.0015 (7)0.0043 (7)
C140.0448 (9)0.0380 (8)0.0373 (8)0.0038 (7)0.0001 (7)0.0037 (7)
C150.0444 (9)0.0392 (8)0.0370 (8)0.0051 (7)0.0005 (7)0.0038 (7)
C160.0435 (9)0.0412 (8)0.0350 (7)0.0047 (7)0.0032 (7)0.0053 (7)
C170.0391 (8)0.0361 (8)0.0383 (8)0.0070 (7)0.0011 (6)0.0033 (6)
C180.0455 (9)0.0346 (7)0.0363 (7)0.0039 (7)0.0003 (6)0.0013 (6)
C190.0391 (8)0.0396 (8)0.0305 (7)0.0004 (7)0.0013 (6)0.0052 (6)
C200.0368 (8)0.0429 (8)0.0392 (8)0.0062 (7)0.0017 (6)0.0023 (7)
C210.0400 (8)0.0367 (8)0.0394 (8)0.0071 (7)0.0044 (7)0.0011 (6)
C220.0381 (8)0.0350 (7)0.0293 (7)0.0026 (6)0.0033 (6)0.0039 (6)
C230.0359 (8)0.0356 (8)0.0320 (7)0.0050 (6)0.0057 (6)0.0001 (6)
C240.0398 (8)0.0382 (8)0.0405 (8)0.0048 (7)0.0034 (7)0.0014 (7)
C250.0394 (9)0.0507 (9)0.0445 (8)0.0048 (7)0.0015 (7)0.0042 (7)
C260.0408 (9)0.0504 (9)0.0496 (9)0.0051 (8)0.0083 (7)0.0118 (8)
C270.0552 (10)0.0397 (8)0.0480 (9)0.0057 (8)0.0113 (8)0.0024 (7)
C280.0472 (9)0.0387 (8)0.0397 (8)0.0024 (7)0.0071 (7)0.0023 (7)
Geometric parameters (Å, º) top
C1—C21.3815 (18)C15—C161.2045 (18)
C1—C61.3977 (18)C16—C191.433 (2)
C1—H111.000C17—C181.3834 (18)
C2—C31.379 (2)C17—C221.3977 (19)
C2—H211.000C17—H1711.000
C3—C41.381 (2)C18—C191.3965 (18)
C3—H311.000C18—H1811.000
C4—C51.3834 (19)C19—C201.393 (2)
C4—H411.000C20—C211.3722 (18)
C5—C61.3979 (18)C20—H2011.000
C5—H511.000C21—C221.3999 (18)
C6—C71.4806 (18)C21—H2111.000
C7—C81.3994 (18)C22—C231.4799 (18)
C7—C121.3995 (19)C23—C241.3929 (17)
C8—C91.3803 (18)C23—C281.3975 (19)
C8—H811.000C24—C251.3838 (18)
C9—C101.3968 (19)C24—H2411.000
C9—H911.000C25—C261.380 (2)
C10—C111.4006 (19)C25—H2511.000
C10—C131.431 (2)C26—C271.381 (2)
C11—C121.3767 (18)C26—H2611.000
C11—H1111.000C27—C281.3835 (19)
C12—H1211.000C27—H2711.000
C13—C141.2041 (18)C28—H2811.000
C14—C151.373 (2)
C2—C1—C6121.20 (14)C14—C15—C16179.36 (15)
C2—C1—H11119.4C15—C16—C19177.96 (15)
C6—C1—H11119.4C18—C17—C22121.24 (12)
C1—C2—C3120.43 (14)C18—C17—H171119.4
C1—C2—H21119.8C22—C17—H171119.4
C3—C2—H21119.8C17—C18—C19120.12 (13)
C2—C3—C4119.41 (14)C17—C18—H181119.9
C2—C3—H31120.3C19—C18—H181119.9
C4—C3—H31120.3C16—C19—C18120.75 (13)
C3—C4—C5120.44 (14)C16—C19—C20120.37 (13)
C3—C4—H41119.8C18—C19—C20118.87 (13)
C5—C4—H41119.8C19—C20—C21120.73 (13)
C4—C5—C6121.03 (13)C19—C20—H201119.6
C4—C5—H51119.5C21—C20—H201119.6
C6—C5—H51119.5C20—C21—C22121.20 (13)
C5—C6—C1117.48 (12)C20—C21—H211119.4
C5—C6—C7121.64 (12)C22—C21—H211119.4
C1—C6—C7120.87 (12)C21—C22—C17117.79 (12)
C6—C7—C8121.81 (12)C21—C22—C23120.67 (12)
C6—C7—C12120.88 (12)C17—C22—C23121.54 (12)
C8—C7—C12117.31 (12)C22—C23—C24121.02 (12)
C7—C8—C9121.34 (13)C22—C23—C28120.58 (12)
C7—C8—H81119.3C24—C23—C28118.40 (13)
C9—C8—H81119.3C23—C24—C25120.68 (14)
C8—C9—C10120.66 (13)C23—C24—H241119.7
C8—C9—H91119.7C25—C24—H241119.7
C10—C9—H91119.7C24—C25—C26120.23 (14)
C9—C10—C11118.60 (12)C24—C25—H251119.9
C9—C10—C13121.56 (13)C26—C25—H251119.9
C11—C10—C13119.83 (13)C25—C26—C27119.88 (14)
C10—C11—C12120.12 (13)C25—C26—H261120.1
C10—C11—H111120.0C27—C26—H261120.0
C12—C11—H111119.9C26—C27—C28120.17 (14)
C7—C12—C11121.96 (13)C26—C27—H271119.9
C7—C12—H121119.0C28—C27—H271119.9
C11—C12—H121119.0C23—C28—C27120.62 (13)
C10—C13—C14177.56 (15)C23—C28—H281119.7
C13—C14—C15178.75 (15)C27—C28—H281119.7

Experimental details

(I)(II)
Crystal data
Chemical formulaC22H42Si2C28H18
Mr362.75354.45
Crystal system, space groupTriclinic, P1Monoclinic, P21/n
Temperature (K)173173
a, b, c (Å)7.2397 (4), 7.8151 (5), 10.9548 (5)6.6723 (2), 11.0320 (3), 26.0094 (7)
α, β, γ (°)86.680 (5), 80.485 (4), 78.542 (4)90, 91.2833 (14), 90
V3)598.90 (6)1914.04 (9)
Z14
Radiation typeMo KαMo Kα
µ (mm1)0.150.07
Crystal size (mm)0.30 × 0.16 × 0.140.27 × 0.22 × 0.20
Data collection
DiffractometerNonius KappaCCD area-detectorNonius KappaCCD area-detector
Absorption correctionMulti-scan
DENZO and SCALEPACK (Otwinowski & Minor, 1997)
Multi-scan
DENZO and SCALEPACK (Otwinowski & Minor, 1997)
Tmin, Tmax0.98, 0.980.98, 0.99
No. of measured, independent and
observed reflections
29988, 3478, 2019 [I > 3σ(I)]21205, 5625, 2992 [I > 2σ(I)]
Rint0.0690.081
(sin θ/λ)max1)0.7030.706
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.050, 0.054, 1.09 0.040, 0.047, 0.99
No. of reflections20192992
No. of parameters109253
H-atom treatmentH-atom parameters constrainedH-atom parameters constrained
Δρmax, Δρmin (e Å3)0.93, 0.640.13, 0.18

Computer programs: COLLECT (Nonius, 2001), DENZO and SCALEPACK (Otwinowski & Minor, 1997), DENZO and SCALEPACK, SIR92 (Altomare et al., 1994), CRYSTALS (Betteridge et al., 2003), ORTEP-3 (Farrugia, 1997), CRYSTALS.

Selected geometric parameters (Å, º) for (I) top
C1—C1i1.373 (3)C3—Si11.873 (2)
C1—C21.204 (2)C6—Si11.873 (2)
C2—Si11.8432 (18)C9—Si11.876 (2)
C1i—C1—C2179.6 (3)C1—C2—Si1177.18 (18)
Symmetry code: (i) x+2, y+1, z+1.
Selected geometric parameters (Å, º) for (II) top
C6—C71.4806 (18)C15—C161.2045 (18)
C10—C131.431 (2)C16—C191.433 (2)
C13—C141.2041 (18)C22—C231.4799 (18)
C14—C151.373 (2)
C10—C13—C14177.56 (15)C14—C15—C16179.36 (15)
C13—C14—C15178.75 (15)C15—C16—C19177.96 (15)
Important intermolecular C—H···π contacts in compound (II) (Å, °). Cg1 is the centroid of the ring C1–C6, Cg2 of ring C7–C12, Cg3 of the ring C17–C22 and Cg4 of the ring C23–C28. top
DistanceAngle
Within the dimer (Fig. 4a)
H181···C14i2.9
H181···C15i3.0
H171···C13i3.1
C24—H241···Cg2i2.8147
C25—H251···Cg1i3.5174
Other interactions within a layer (Fig. 4b)
C3—H31···Cg2ii2.9148
C26—H261···Cg1iii3.4170
Interactions between layers
C1—H11···Cg4iv2.9151
C8—H81···Cg3v3.1127
C11—H111···Cg1vi3.4136
C20—H201···Cg4vii2.9121
Symmetry codes: (i) 1 - x, 1 - y, -z; (ii) -3/2 - x, 1/2 + y, -1/2 -z; (iii) -5/2 + x, 1/2 - y, -1/2 + z; (iv) -3/2 + x, 1/2 - y, -1/2 + z; (v) -x, 1 - y, -z; (vi) -1/2 - x, -1/2 + y, -1/2 - z; (vii) -1 + x, y, z.
 

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