Dislocations around scratches and indents on ±(111) surface of gallium arsenide

The dislocation configurations around microscratches and indents on ±(111) surfaces of GaAs single crystals were studied by X-ray transmission topography, scanning electron microscopy in cathodoluminescence mode and high-voltage transmission electron microscopy. Most of the dislocations generated are loops of screw - B(g) or screw -B(g) - screw character gliding on {111} slip planes parallel or inclined to the surface. The irregular shape of the extended loops gliding parallel to the B surface is due to interaction with other loops and apparent motion involving a double kink nucleation mechanism. The exhibited configuration of dislocation loops suggests a cross-slip orientation of the dissociated screw segments. The direction of propagation of dislocations does not depend on the sense of scratching. Grown-in dislocations are surrounded by a cloud of point defects and they are immobile in contrast to dislocations introduced by indentation.