Fitting of rocking curves from ion-implanted semiconductors

A simple fitting procedure is presented for the analysis of the strain profile in semiconductors; it has been applied to samples of ion-implanted silicon. The calculated strain profiles for some experimental rocking curves are compared with the simulated dopant-concentration profiles and the energy profiles. A two-sided Gaussian has been shown to produce an adequate fit to the strain profile in ion-implanted semiconductors. This procedure reduces the number of refinable parameters to only four and is favoured over changing the strain distribution as a function of depth in a rapid uncorrelated way. The error between the measured and calculated rocking curves has been analysed as a function of the Gaussian parameters. Besides one sharp global minimum, many local minima exist. It is shown that smoothing of the rocking curves with a triangular shape results in a reduction of the number of local minima.