Bragg-Case Synchrotron Section Topography of Silicon Implanted with High-Energy Protons and α Particles

Back-reflection section topography using white-beam synchrotron radiation has been applied for the investigation of silicon implanted with 1 and 1.6 MeV protons and 4.8 MeV α particles. The beam width was limited to 5 μm, and a series of spots in the vicinity of a centrally adjusted reflection were indexed and analysed. The back-reflection section pattern of implanted crystals usually exhibits fringes corresponding to the reflection from the surface and a series of fringes corresponding to the rear region of the shot-through layer, the destroyed layer and the bulk. The patterns were used for direct evaluation of ion ranges and thicknesses of the shot-through layer. The overall characteristics of the obtained patterns were successfully reproduced in simulations based on numerical integration of the Takagi–Taupin equations. The agreement between the simulation and experiment proves that the lattice-parameter depth-distribution profiles can be assumed to be proportional to interstitial-vacancy distributions obtained using the Monte Carlo method from the Biersack–Ziegler theory. The simulation also reproduced interference tails observed in some section patterns. It was found that these tails are caused by the ion-dose change along the beam and they were probably formed due to the interference between the radiation reflected from the bulk and those rays reflected by the rear region of the shot-through layer.