The simulation and interpretation of diffraction profiles from partially relaxed layer structures

A procedure for modelling the Bragg-case dynamical diffraction profiles from crystals with defects has been developed. This simulation of profiles has been applied to partially relaxed semiconductor layer structures whose lattice parameter and layer thickness were sufficient to induce interfacial defects. The procedure has a minimum of input parameters and is therefore applicable to routine use and has been shown to give good agreement with experimental data and also can predict the extent of the strain fields generated at the interfaces. The evaluation of the relaxation parameters in these strained layer structures is presented for some examples making use of high-resolution diffraction-space mapping and topography.