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A study of the lattice parameters of boron-doped silicon (1014-1019 cm-3) grown in (111) and (001) directions by the Czochralski technique has been undertaken. Interplanar spacings (d) were measured by the pseudo-Kossel technique to a precision of 0.001%; different procedures to obtain d and the errors are discussed. The crystallographic planes are found to contract preferentially and the usual study of parameter variation must be made as a function of d. The diffused B particularly contracts the {333} plane, which is more pronounced in high concentrations. An orientation dependence of the diffusion during growth was observed.

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