The evaluation of crystal perfection by means of the asymmetric Bragg reflections

A new X-ray method for the evaluation of single-crystal perfection is presented. The method is based on the analysis of the dependence of integrated intensity on the asymmetry parameter of the asymmetric Bragg reflections in the case of plate-shaped crystals. As a result, the parameters describing the level of crystal perfection can be determined. The application of the presented method enriches considerably the capabilities of the Bond method applied in precise lattice-parameter determination of thin near-surface single-crystal layers. An example of the investigation of a boron-doped epitaxic layer on silicon is described.