X-ray Bragg reflexion and strain compensation in silicon crystals

Crystal-lattice strain induced by impurity doping may be compensated for by diffusion of another kind of impurity. This was tried with successive diffusion of germanium and boron into (111) silicon wafers and was confirmed in a nondestructive way from the intensity profiles of the 333 Bragg reflection of Cu Kα X-rays. The intensity profile is related to the strain distribution along the depth through numerical computations, the programme for which has been developed and utilized previously [Fukuhara & Takano (1977). Acta Cryst. A33, 137–142] in quantitative discussions on strain and impurity concentration in silicon.