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research papers
Some polytypes of silicon carbide are studied by means of reflexion electron diffraction (RHEED). This simple method allows a wide investigation over the whole surface of large crystals. Reciprocal lattice planes of well known basic polytypes and of intermediate regions between them are recorded. `Forbidden' extra spots characterizing the polytypic structure appear from multiple interactions. Examples of localized long-period or disordered polytypes are shown. A new 441R polytype has been found.